High temperature dielectrics and defect characteristic of (Nb, Mn, Zr) modified 0.4(Ba 0.8 Ca 0.2 )TiO 3 – 0.6Bi(Mg 0.5 Ti 0.5 )O 3 ceramics

Ren, Shaokai; Chen, Zhi; Yan, Tianxiang; Han, Fuzhu; Kuang, Xiaojun; Fang, Liang; Liu, Laijun

doi:10.1016/j.jpcs.2018.03.006

Cited by 39 publications

(12 citation statements)

References 47 publications

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“…From the measurements of the dielectric constant and dielectric loss as a function of temperature at 1 kHz (Figure a), we can see that the change of the dielectric constant and dielectric loss of the optimum multilayer is only ∼14.59 and 14.01%, respectively, from RT to 250 °C. These temperature-independent dielectric properties can also be found in other modified Bi(Mg 0.5 Ti 0.5 )O 3 materials and it can be considered as the lower carrier transport or the re-entrant dipole glass-like relaxor behavior which is caused by the ionic disorder and charge mismatch. − The dielectric loss of the multilayer film exhibits a more stable and lower value (less than 0.1) than that of the single layer films of BST and BT–BMZ. These pre-eminent dielectric properties in such a wide temperature range benefit energy storage at high temperature.…”

Section: Resultsmentioning

confidence: 74%

Enhanced Energy Storage Performance of Lead-Free Capacitors in an Ultrawide Temperature Range via Engineering Paraferroelectric and Relaxor Ferroelectric Multilayer Films

Dai

et al. 2020

ACS Appl. Mater. Interfaces

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Industry has been seeking a thin-film capacitor that can work at high temperature in a harsh environment, where cooling systems are not desired. Up to now, the working temperature of the thin-film capacitor is still limited up to 200 °C. Herein, we design a multilayer structure with layers of paraferroelectric (Ba 0.3 Sr 0.7 TiO 3 , BST) and relaxor ferroelectric (0.85BaTiO 3 −0.15Bi(Mg 0.5 Zr 0.5 )O 3 , BT−BMZ) to realize optimum properties with a flat platform of dielectric constant and high breakdown strength for excellent energy storage performance at high temperature. Through optimizing the multilayer structure, a highly stable relaxor ferroelectric state is obtained for the BST/ BT−BMZ multilayer thin-film capacitor with a total thickness of 230 nm, a period number N = 8, and a layer thickness ratio of BST/ BT−BMZ = 3/7. The optimized multilayer film shows significantly improved energy storage density (up to 30.64 J/cm 3 ) and energy storage efficiency (over 70.93%) in an ultrawide temperature range from room temperature to 250 °C. Moreover, the multilayer system also exhibits excellent thermal stability in such an ultrawide temperature range with a change of 5.15 and 12.75% for the recoverable energy density and energy storage efficiency, respectively. Our results demonstrate that the designed thin-film capacitor is promising for the application in a harsh environment and open a way to tailor a thin-film capacitor toward higher working temperature with enhanced energy storage performance.

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Section: Resultsmentioning

confidence: 74%

Enhanced Energy Storage Performance of Lead-Free Capacitors in an Ultrawide Temperature Range via Engineering Paraferroelectric and Relaxor Ferroelectric Multilayer Films

Dai

et al. 2020

ACS Appl. Mater. Interfaces

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“…On the one hand, the permittivity decreases drastically and the high-temperature dielectric anomaly gradually broadened with increasing Ta concentration, indicating that Ta ions promotes the diffuse phase transition behavior of the ceramics. 27,38 On the other hand, the significant increase of dielectric loss at high temperature is attributed to the thermal activation process of oxygen vacancies giving rise to the dc conductivity. 39 The introduction of Ta into to 0.94BNT-0.06BT as a donor creates cation vacancies and possibly gives rise to the decrease of oxygen vacancies according to the defect compensation; Eqs.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, BaTiO 3 (BT)-based ceramics also have been used as capacitors for many years because of the high dielectric constant. [26][27][28][29][30] The introduction of Ba at A site results in suppress the longrange ferroelectric order, which makes the ferroelectric domains become nanometer scale., 31,32 which is conducive to the emergence of large strains for the compositions around morphotropic phase boundary (MPB). In addition, our previous work indicated that rare earth Yb 2 O 3 promotes the grain growth and densification of the ceramics while Ti-rich impurity appears due to the compensation of Ti-vacancy.…”

Section: Introductionmentioning

confidence: 99%

High-Temperature Dielectric and Relaxation Behavior of Tantalum-Doped Sodium Bismuth Titanate-Barium Titanate Ceramics

Liu

Han

Liu

et al. 2020

Journal of Elec Materi

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Ta-doped 0.94Bi 0.5 Na 0.5 TiO 3-0.06BaTiO 3 [(1 À x)(0.94BNT-0.06BT) À xTa (x = 0.00-0.02)] ceramics were prepared by a solid-state reaction process. Xray diffraction (XRD) shows a rhombohedral symmetry with space group R3c for all samples. The introduction of Ta moves the low-temperature dielectric anomaly to lower temperature while the high-temperature dielectric anomaly becomes broader, although the dielectric permittivity is depressed slightly. Dielectric permittivity (e r) as a function of temperature for the sample x = 0.02 shows a stable and broad relative permittivity $ 3500 from 50°C to 400°C with low dielectric loss (tand) £ 0.02 from 80°C to 340°C (at 1 kHz). A Debyelike relaxation was found in the paraelectric region. The activation energy of relaxation frequency (E a) of the samples x = 0, 0.005, 0.01, 0.02 is 0.62 eV, 0.84 eV, 1.15 eV and 1.20 eV and the activation energy of conduction (E con) is 0.56 eV, 0.72 eV, 0.89 eV and 0.90 eV for x = 0.00, x = 0.005, x = 0.01 and x = 0.02, respectively, which are derived from isothermal impedance spectroscopy and admittance spectroscopy, respectively. The dielectric relaxation behavior is related to the migration of oxygen vacancies and cation vacancies dependence on the concentration of Ta.

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“…where V Li(Cd) and V Li(Ga) represent neutral vacancies, V′ Li and V″ Li represent single and doubly ionized vacancies, respectively, h • is the free electron hole, and V′ O and V″ O are the single and doubly ionized oxygen vacancies, respectively. 42,48,49 To further establish the nature of oxygen vacancies present in Cd 0.40 Ga 0.60 Ga 2.66 O y sample, dielectric loss data (tan δ) recorded in flowing oxygen was plotted against the frequency at various temperatures. Two relaxations, labeled as R1 and R2, could be noted at lowand high-frequency regions (Figure 9a,b).…”

Section: Resultsmentioning

confidence: 99%

“…As the excess gallium in the structure was presumed to be present at tetrahedral interstitial positions, substitution of them with Li + would generate doubly ionized holes. They could be neutralized with the generation of singly and doubly ionized oxygen vacancies, respectively, according to the following mechanism: where V Li(Cd) and V Li(Ga) represent neutral vacancies, V′ Li and V″ Li represent single and doubly ionized vacancies, respectively, h • is the free electron hole, and V′ O and V″ O are the single and doubly ionized oxygen vacancies, respectively. ,, To further establish the nature of oxygen vacancies present in Cd 0.40 Ga 0.60 Ga 2.66 O y sample, dielectric loss data (tan δ) recorded in flowing oxygen was plotted against the frequency at various temperatures. Two relaxations, labeled as R1 and R2, could be noted at low- and high-frequency regions (Figure a,b).…”

Section: Resultsmentioning

confidence: 99%

Interplay between Defects and Cation Nonstoichiometry in Lithium-Substituted CdGa₂O₄ Leading to Multifunctional Behavior

2018

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Stoichiometric and nonstoichiometric cadmium gallate (gallium-rich) samples have been synthesized by a modified epoxide gel method. Cubic spinel arrangement was inferred for stoichiometric and gallium-rich compositions from powder X-ray diffraction analysis. Complete structural analysis employing Raman spectroscopy has been carried out to find the intricate differences between these two samples. Additional evidence for the cubic symmetry and elemental ratio of these samples has been gathered using microscopy techniques and energy-dispersive X-ray analysis. Li+ substitution for Cd2+ in gallium-rich spinel was examined, and up to 60 mol % of Cd2+ could be substituted with Li+, retaining the spinel arrangement. The introduction of lithium led to a decrease in cubic lattice parameter. Changes in the vibration modes upon lithium substitution were analyzed by Fourier transform infrared and Raman spectral measurements. The band gap value was found to increase with increase in lithium content, indicative of the Burstein–Moss effect in this system. Oxygen vacancies created as a result of lithium substitution was further examined by oxygen-ion conductivity (493–773 K) and dielectric spectroscopic measurements (100–400 K). The estimated activation energy, from these measurements, suggested major contribution of doubly ionized oxygen vacancies to the conductivity in addition to lithium-ion mobility in Li+-substituted samples. A possible defect structure operative in this system has been proposed. The catalytic role of oxygen vacancies as defect centers has been favorably utilized for the photodegradation of aqueous methylene blue dye solution.

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High temperature dielectrics and defect characteristic of (Nb, Mn, Zr) modified 0.4(Ba 0.8 Ca 0.2 )TiO 3 – 0.6Bi(Mg 0.5 Ti 0.5 )O 3 ceramics

Cited by 39 publications

References 47 publications

Enhanced Energy Storage Performance of Lead-Free Capacitors in an Ultrawide Temperature Range via Engineering Paraferroelectric and Relaxor Ferroelectric Multilayer Films

Enhanced Energy Storage Performance of Lead-Free Capacitors in an Ultrawide Temperature Range via Engineering Paraferroelectric and Relaxor Ferroelectric Multilayer Films

High-Temperature Dielectric and Relaxation Behavior of Tantalum-Doped Sodium Bismuth Titanate-Barium Titanate Ceramics

Interplay between Defects and Cation Nonstoichiometry in Lithium-Substituted CdGa₂O₄ Leading to Multifunctional Behavior

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High temperature dielectrics and defect characteristic of (Nb, Mn, Zr) modified 0.4(Ba 0.8 Ca 0.2 )TiO 3 – 0.6Bi(Mg 0.5 Ti 0.5 )O 3 ceramics

Cited by 39 publications

References 47 publications

Enhanced Energy Storage Performance of Lead-Free Capacitors in an Ultrawide Temperature Range via Engineering Paraferroelectric and Relaxor Ferroelectric Multilayer Films

Enhanced Energy Storage Performance of Lead-Free Capacitors in an Ultrawide Temperature Range via Engineering Paraferroelectric and Relaxor Ferroelectric Multilayer Films

High-Temperature Dielectric and Relaxation Behavior of Tantalum-Doped Sodium Bismuth Titanate-Barium Titanate Ceramics

Interplay between Defects and Cation Nonstoichiometry in Lithium-Substituted CdGa2O4 Leading to Multifunctional Behavior

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Interplay between Defects and Cation Nonstoichiometry in Lithium-Substituted CdGa₂O₄ Leading to Multifunctional Behavior