High Temperature Electrical Conductivity in Cu-Doped ZnS

Abstract

High temperature electrical conductivity (HTEC) was measured and high temperature defect equilibrium (HTDE) was analysed in ZnS:Cu to study the conditions for making p‐type material. In the high zinc vapour pressure (pZn) region, the Cu solubility limit determines the composition of phases coexisting with ZnS crystal. The negative slope of the HTEC isotherm in this region is caused by the chemical outdiffusion of Cu. The high pZn and the high sulfur vapour pressure (p italicS 2) regions are characterized by dominant donors. At high p italicS 2 antistructural disorder and its associates are introduced into the HTDE model. At low pZn or p italicS 2 values, the reverse sign of the isotherm slope can be explained by two‐carrier conduction, and in this region p‐type HTEC may be formed.

The effect of small addition of copper on the growth process, structure, surface charge and adsorption properties of ZnO films in the pyrolysis of dithiocarbamates

“…The diffusion of Cu into the ZnS lattice is supposed to be governed by interstitial and substitutional mechanisms. [123][124][125] It was confirmed that the ion exchange mechanism of Zn 2+ by Cu 2+ occurs on the surface, followed by a redox reaction of the adsorbed Cu 2+ into Cu + and S 2À into S À , which leads to the formation of a Cu(I)-sulfide layer on the sphalerite surface. 126 Moreover, it was found that the copper uptake was lower in the presence of oxygen.…”

The analysis of thermoluminescent glow peaks of copper doped ZnS thin films after β-irradiation

“…During the past five decades, a great deal of effort has been spent in investigating the nature of centers responsible for various kinds of luminescence in Cu-doped ZnS crystal [23][24][25][26]. In these studies, it has been gradually revealed that some native lattice defects, background or doped impurities and association of them seem to play very important roles in the luminescence characteristics of these crystals.…”

High temperature defect equilibrium in ZnS:Cu single crystals

“…The best way to describe HTDE is to calculate defect concentrations 1 using experimentally determined HTEC isotherms and isobars data. Our study of ZnS:Cu has been in progress for many years 2–4. In our earlier works, we investigated HTEC and Cu solubility in Cu‐doped ZnS under zinc vapour pressure ( p Zn ) and under sulphur vapour pressure $(p_{{\rm S}_2 } )$ .…”