2021
DOI: 10.1063/5.0058751
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High-temperature electromechanical loss in piezoelectric langasite and catangasite crystals

Abstract: Temperature-dependent acoustic loss Q−1 is studied in partially disordered langasite (LGS, La3Ga5SiO14) and ordered catangasite (CTGS, Ca3TaGa3Si2O14) crystals and compared with previously reported CTGS and langatate (LGT, La3Ga5.5Ta0.5O14) data. Two independent techniques, a contactless tone-burst excitation technique and contacting resonant piezoelectric spectroscopy, are used in this study. Contributions to the measured Q−1(T) are determined through fitting to physics-based functions, and the extracted fit … Show more

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Cited by 8 publications
(2 citation statements)
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“…The origin of piezoelectric stiffening is the polarization within the crystal due to the external electrical excitation voltage (Johannsmann and Heim, 2006). For 5 MHz CTGS resonators, k 2 is about 2 % between room temperature and 900 • C (Suhak et al, 2018(Suhak et al, , 2021. Furthermore, the coupling is impacted by the resonator geometry (IEEE, 1988).…”
Section: Modelling Of Tsm Resonatorsmentioning
confidence: 99%
“…The origin of piezoelectric stiffening is the polarization within the crystal due to the external electrical excitation voltage (Johannsmann and Heim, 2006). For 5 MHz CTGS resonators, k 2 is about 2 % between room temperature and 900 • C (Suhak et al, 2018(Suhak et al, , 2021. Furthermore, the coupling is impacted by the resonator geometry (IEEE, 1988).…”
Section: Modelling Of Tsm Resonatorsmentioning
confidence: 99%
“…According to the occupation of cations, they can be divided into structural ordered- and disordered-type crystals; i.e., different cations randomly occupy the same lattice position in disordered crystals, whereas different cations occupy their respective positions in ordered crystals. The resistivity of the ordered crystals is generally higher compared to that of disordered crystals. It was reported that the structural ordered Ca 3 TaGa 3 Si 2 O 14 (CTGS, ∼1.0 × 10 11 Ω·cm) crystal exhibits the highest resistivity among the langasite-type crystals, 2 orders of magnitude higher than that of the disordered La 3 Ga 5 SiO 14 (LGS, ∼8.0 × 10 8 Ω·cm) crystal at 300 °C . The relatively low resistivity of LGS is mainly attributed to the high conductivity caused by oxygen vacancies (V O ).…”
Section: Introductionmentioning
confidence: 99%