2014
DOI: 10.1063/1.4901108
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High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature

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Cited by 11 publications
(1 citation statement)
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“…A direct spin-phonon process, which may become important in spin relaxation under strong magnetic fields (>1 T), is not effective at low magnetic fields (<1 mT), under which exciton spin lifetimes are obtained . Since the measured material is bulk CH 3 NH 3 PbI 3 and the strong SOC associated with heavy elements has been consistently included in the electronic structure, we neglect extrinsic heavy-element or magnetic impurities and structural/composition fluctuations, which can contribute to spin relaxation in III–V semiconductors and alloys, particularly in low-dimensional structures. The BAP mechanism originates from exchange-induced spin flip scattering between electrons and holes.…”
Section: Methods and Resultsmentioning
confidence: 99%
“…A direct spin-phonon process, which may become important in spin relaxation under strong magnetic fields (>1 T), is not effective at low magnetic fields (<1 mT), under which exciton spin lifetimes are obtained . Since the measured material is bulk CH 3 NH 3 PbI 3 and the strong SOC associated with heavy elements has been consistently included in the electronic structure, we neglect extrinsic heavy-element or magnetic impurities and structural/composition fluctuations, which can contribute to spin relaxation in III–V semiconductors and alloys, particularly in low-dimensional structures. The BAP mechanism originates from exchange-induced spin flip scattering between electrons and holes.…”
Section: Methods and Resultsmentioning
confidence: 99%