Springer Handbook of Electronic and Photonic Materials 2006
DOI: 10.1007/978-0-387-29185-7_24
|View full text |Cite
|
Sign up to set email alerts
|

High-Temperature Electronic Materials: Silicon Carbide and Diamond

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2014
2014
2020
2020

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 153 publications
0
1
0
Order By: Relevance
“…Because of its wide bandgap (2.36 eV for 3C-SiC, 3.26 eV for 4H-SiC, and 3.02 eV for 6H-SiC in comparison with 1.12 eV for silicon), SiC has been used to manufacture electronic devices for operating in harsh environments. SiC devices have exhibited good performance at high temperatures up to 600 °C, while silicon devices, the most consolidated for different applications, operate satisfactorily only at maximum temperatures around 200 °C [ 115 ]. Other SiC attractive material characteristics include a high radiation and extreme chemical inertness, while still being RIE etchable, a high thermal conductivity (better than copper), high hardness and elastic modulus (typically ~450 GPa compared with ~130 GPa for Si), and a high critical electric field (in excess of 2 MV cm −1 ) [ 8 , 116 ].…”
Section: Cvd-based Sic Requirements For Development Of Mems/nems Dmentioning
confidence: 99%
“…Because of its wide bandgap (2.36 eV for 3C-SiC, 3.26 eV for 4H-SiC, and 3.02 eV for 6H-SiC in comparison with 1.12 eV for silicon), SiC has been used to manufacture electronic devices for operating in harsh environments. SiC devices have exhibited good performance at high temperatures up to 600 °C, while silicon devices, the most consolidated for different applications, operate satisfactorily only at maximum temperatures around 200 °C [ 115 ]. Other SiC attractive material characteristics include a high radiation and extreme chemical inertness, while still being RIE etchable, a high thermal conductivity (better than copper), high hardness and elastic modulus (typically ~450 GPa compared with ~130 GPa for Si), and a high critical electric field (in excess of 2 MV cm −1 ) [ 8 , 116 ].…”
Section: Cvd-based Sic Requirements For Development Of Mems/nems Dmentioning
confidence: 99%