High-Temperature Encapsulation Materials for Power Modules: Technology and Future Development Trends

Gao, Hanyan; Liu, Pan

doi:10.1109/tcpmt.2022.3225960

Cited by 21 publications

(5 citation statements)

References 147 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The study [85] examines the characteristics, potential, and constraints of encapsulation materials designed for hightemperature power modules. Among these materials, fluoric phthalonitrile resin, benzo-polymers, bio-based epoxy systems, and notably, the epoxy resin-cyanate ester (EP-CE) blend system incorporating Al2O3 fillers complemented by polyimide (PI) demonstrate promise owing to their notable attributes such as high Tg, reduced CTE, and enhanced TC.…”

Section: Ieee Transactions On Dielectrics and Electrical Insulationmentioning

confidence: 99%

A Comprehensive Review of Mitigation Strategies to Address Insulation Challenges Within High-Voltage, High-Power-Density (U)WBG Power Module Packages

Adhikari,

Ghassemi

2024

IEEE Trans. Dielect. Electr. Insul.

View full text Add to dashboard Cite

Within the expanding domain of electrical power demand, the future of power module packaging is entwined with the progress of (ultra) wide bandgap (UWBG) materials. These materials, like silicon carbide (SiC), aluminum nitride (AlN), and diamond, offer advantages with higher power density, decreased weight, and expanded operational abilities regarding temperature, voltage, and frequency. However, the pursuit of pushing these limits confronts challenges within insulation systems, which may struggle to endure the demands of these parameters, potentially resulting in unfavorable conditions like high electric field, space charge accumulation, electrical treeing, and partial discharge (PD), leading to insulation failure. The emphasis of this paper is to review the insulation challenges within (U)WBG power modules and recent research in mitigating the electric field stress at triple points (TPs) and resolving the PD issues. The manuscript first discusses the high electric field stress issue at triple points. Then, ceramic substrate materials, encapsulation materials, and the influence of harsh weather conditions on them are reviewed. The space charge, electrical treeing, and PD issues within encapsulation materials are analyzed under practical operation conditions of (U)WBG power modules like high frequency, temperature, and square wave pulses. Finally, the various strategies to alleviate the associated insulation challenges are meticulously discussed. While the identified mitigation strategies are able to strengthen insulation systems for packaging, their validation under actual operational conditions of (U)WBG power modules remains relatively unexplored, representing a potential avenue for further investigation. This review offers a valuable framework by providing the constraints of the current studies and recommendations for the future that can be utilized as a reference point for future research endeavors. Index Terms-(U)WBG power module packaging, partial discharge, triple points, encapsulation material, electric field stress, high power density, field grading materials, nonlinear field-dependent conductivity layerThis paragraph of the first footnote will contain the date on which you submitted your paper for review, which is populated by IEEE.

show abstract

Section: Ieee Transactions On Dielectrics and Electrical Insulationmentioning

confidence: 99%

A Comprehensive Review of Mitigation Strategies to Address Insulation Challenges Within High-Voltage, High-Power-Density (U)WBG Power Module Packages

Adhikari,

Ghassemi

2024

IEEE Trans. Dielect. Electr. Insul.

View full text Add to dashboard Cite

show abstract

“…With the rapid development of new energy vehicles, consumer electronics, wind power, and aerospace, the third-generation wide-bandgap (WBG) semiconductors, including silicon carbide (SiC) and gallium nitride (GaN), are playing an important role in high-power and high-frequency applications, which experience a maximal junction temperature exceeding 200 °C. − This imposes more stringent demands on the high-temperature stability of electronic packaging materials . Epoxy molding compounds (EMC) are the most important packaging materials in the electronic industry.…”

Section: Introductionmentioning

confidence: 99%

“…1−5 This imposes more stringent demands on the hightemperature stability of electronic packaging materials. 6 Epoxy molding compounds (EMC) are the most important packaging materials in the electronic industry. However, at a high temperature, the material will suffer failure due to the glass transition temperature (T g ) of EMC usually below 200 °C.…”

Section: Introductionmentioning

confidence: 99%

Phthalonitrile/Epoxy Copolymers Endowing Molding Compounds with High T_g, Low CTE, and Intrinsic Flame Retardancy

Huang,

Zhu,

et al. 2024

Ind. Eng. Chem. Res.

View full text Add to dashboard Cite

The rapid development of third-generation semiconductor power devices has been driving the requirement for high-temperature stable molding compounds. In this study, three kinds of phthalonitrile-etherified phenolic resins (PNP) with different degrees of etherification were prepared from linear phenolic resin and 4-nitrophthalonitrile by a facile one-pot method. Subsequently, a new electronic packaging molding compound (PEM) was prepared according to the processing method of traditional epoxy molding compounds (EMC), based on the resin blends of the PNP with a 50% etherification and polyfunctional epoxy resin as the resin matrix and triphenylphosphine employed as the curing accelerator. The reaction of the epoxy groups with both the phenol hydroxyl and cyano groups endowed the resin matrix with a high curing activity, thus making the molding process of PEM be compatible with that of EMC. The cured products of PEM showed a much superior thermal performance to that of EMC. For the cured PEM, the glass transition temperature (T g) was up to 300 °C and the coefficients of thermal expansion (CTE) decreased significantly in comparison to EMC, due to the generated rigid structures of oxazoline, isoindoline, triazine, and phthalocyanine, as well as the high cross-linking density. It is worth noting that the cured PEM could achieve a V-0 rating in the UL-94 vertical burning test without the addition of any flame retardants, demonstrating its remarkable intrinsic flame retardancy. Moreover, the cured PEM also exhibited good dielectric properties, thermal conductivity, high temperature aging resistance, and flexural performance at both room temperature and 200 °C. In sum, a promising strategy for the preparation of electronic packaging molding compounds with high T g, low CTE, and intrinsic flame retardancy was provided.

show abstract

“…[2][3][4][5][6][7] To ensure the stable operation of SiC power devices, highly reliable packaging is required. However, the low high-temperature stability of epoxy-based encapsulation materials, especially for SiC and GaN devices operating at >200 • C. 5,6,8 The good processing and insulating properties of glass compared with other materials, such as polymer and oxide, makes it a promising packaging material to fulfil the function of insulating and destabilizing the highly mobile alkali metal ions on electronic devices. 9,10 Its applications encompass passivation, 11,12 bonding, 13 encapsulation.…”

Section: Introductionmentioning

confidence: 99%

“…The boom of electronic vehicles boosts the growth market for semiconductor power devices 1 . Due to the wider energy bandgap as compared with Si, SiC chip is the better choice for power electronics operating at higher temperatures (>200°C) and higher voltages (>600 V) 2–7 . To ensure the stable operation of SiC power devices, highly reliable packaging is required.…”

Section: Introductionmentioning

confidence: 99%

Tuning the thermal and insulation properties of bismuth borate glass for SiC power electronics packaging

Chen,

Zhang

et al. 2023

J Am Ceram Soc.

View full text Add to dashboard Cite

Silicon carbide (SiC) power devices are attracting significant attention due to their outstanding stability in high‐voltage, high‐temperature, and high‐frequency environments. To replace toxic Pb‐based glass, there is an urgent need to develop Pb‐free glass for SiC power device encapsulation, considering its superior electrical insulation properties and processing capabilities. Here, we developed a Bi‐based glass for effective encapsulation practical of SiC power devices. By increasing the content of glass modifier BaO, the structure of bismuth borate glass can be tuned to reduce glass network density, leading to the transition of structural units from [BO4] to [BO3]. The softened temperature is reduced to 363.4°C with the BaO content increasing to 15 mol%. After encapsulating the SiC power devices using Bi‐based glass, the glass demonstrated a reverse breakdown voltage of 650 V and an extremely low leakage current. Therefore, our work provided a route for adapting Pb‐free‐based low‐melting glass for encapsulating SiC devices and offered potential for advanced semiconductor packaging.

show abstract

High-Temperature Encapsulation Materials for Power Modules: Technology and Future Development Trends

Cited by 21 publications

References 147 publications

A Comprehensive Review of Mitigation Strategies to Address Insulation Challenges Within High-Voltage, High-Power-Density (U)WBG Power Module Packages

A Comprehensive Review of Mitigation Strategies to Address Insulation Challenges Within High-Voltage, High-Power-Density (U)WBG Power Module Packages

Phthalonitrile/Epoxy Copolymers Endowing Molding Compounds with High T_g, Low CTE, and Intrinsic Flame Retardancy

Tuning the thermal and insulation properties of bismuth borate glass for SiC power electronics packaging

Contact Info

Product

Resources

About

High-Temperature Encapsulation Materials for Power Modules: Technology and Future Development Trends

Cited by 21 publications

References 147 publications

A Comprehensive Review of Mitigation Strategies to Address Insulation Challenges Within High-Voltage, High-Power-Density (U)WBG Power Module Packages

A Comprehensive Review of Mitigation Strategies to Address Insulation Challenges Within High-Voltage, High-Power-Density (U)WBG Power Module Packages

Phthalonitrile/Epoxy Copolymers Endowing Molding Compounds with High Tg, Low CTE, and Intrinsic Flame Retardancy

Tuning the thermal and insulation properties of bismuth borate glass for SiC power electronics packaging

Contact Info

Product

Resources

About

Phthalonitrile/Epoxy Copolymers Endowing Molding Compounds with High T_g, Low CTE, and Intrinsic Flame Retardancy