High-Temperature Forward and Reverse Current Transport Mechanisms of AlGaN-Based Solar-Blind UV Photodetector

Gu, Yan; Fan, Qigao; Liu, Yu‐Shen; Yang, Xifeng; Jiang, Xuecheng; Guo, Jiarui; Zhang, Xiumei; Lu, Naiyan; Yang, Guofeng

doi:10.1109/ted.2022.3211489

Cited by 8 publications

(1 citation statement)

References 44 publications

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“…Ultraviolet (UV) detection technology has been widely used in military and civilian fields, such as missile warning and tracking, UV communication, skin disease diagnosis, food and drug expensive and cumbersome optical filters, which has injected new vitality into the research and application development of high-performance UV photodetectors [7][8][9]. Avalanche photodetector (APD) is suitable for the detection of weak UV signal due to the multiplication property [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Unipolar carrier multiplication high-gain and low-noise AlGaN ultraviolet avalanche photodiode with periodically stacked structure

Cao,

Wang,

You

et al. 2023

J. Phys. D: Appl. Phys.

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Highly sensitive avalanche photodetector has become a promising candidate for detecting extremely weak target signals. However, the impact ionization multiplication simultaneously triggered by electrons and holes will lead to large excess noise, thus significantly influencing device avalanche performance. Herein, we propose a distinctive AlGaN-based ultraviolet avalanche photodiode with AlN/Al0.2Ga0.8N periodically stacked multiplication region. The higher effective masses and density of states in valence band renders holes limited in the quantum-well region, where thermalization plays a dominant role during carrier transport process. On the contrary, in the atomic-scale AlN/AlGaN stacked structure with a periodic thickness of 10 nm, the electron mutualization motion is conductive to electron obtaining sufficient energy to induce impact ionization. Hence, the mechanism of unipolar carrier induced avalanche multiplication effectively reduces device noise and improving multiplication gain. Meanwhile, the high electric field intensity and tilted energy band in the AlGaN/AlN periodically stacked region significantly contribute to the carrier impact ionization. Consequently, the device achieves a superior avalanche gain of more than 105 at 74 V reverse bias. It is envisioned that the unipolar carrier triggering avalanche events offers a viable route to build high-performance avalanche photodetectors.

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Section: Introductionmentioning

confidence: 99%

Unipolar carrier multiplication high-gain and low-noise AlGaN ultraviolet avalanche photodiode with periodically stacked structure

Cao,

Wang,

You

et al. 2023

J. Phys. D: Appl. Phys.

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1D Core@Dual‐Shell Radial Heterojunction for Unipolar Barrier Solar‐Blind Avalanche Photodetector

Dong,

Wan,

Xia

et al. 2024

Adv Funct Materials

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Ga2O3 based solar‐blind avalanche photodetectors (APDs) are promising for week photodetection in both civil and military applications due to low‐voltage operation, compact dimensions, and optical filter‐free. However, the performance is impeded by low surface‐to‐volume ratio, low barrier height, and elevated dark current. Herein, a 1D ZnO/HfO2/Ga2O3 core@dual‐shell radial heterostructure is designed for high‐performance solar‐blind APDs. A single‐crystal ZnO microwire with smooth surface serves as core framework for shell growth with small lattice mismatch. By incorporating an HfO2 barrier layer, the conduction band offset is further increased to 2.15 eV without introducing a valence band barrier that would impede hole transport, forming a unipolar barrier structure. This high unipolar barrier suppresses dark current effectively, increases the avalanche breakdown electric field, and enhances the avalanche gain. The optimized APD achieves a responsivity of 2.2 × 105 A W−1 and a detectivity of 3.1 × 1016 Jones, with an avalanche gain of 4.7 × 104, which is 16 times higher than the HfO2‐free barrier layer‐modified device. Additionally, it exhibits long‐time stability with a response time of 6.4 ms and a solar‐blind/UVA rejection ratio of 6.25, ensuring immunity to solar interference. This work offers greater design flexibility to develop high‐performance Ga2O3‐based APDs and other optoelectronic devices.

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Mechanisms Affecting the Anomalous Responsivity of Back‐Illuminated p–i–n AlGaN Solar‐Blind Photodetectors

Sun,

Yang,

Liu

et al. 2024

Physica Status Solidi (a)

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A study on the bias‐dependent spectral responsivity of back‐illuminated p–i–n AlGaN UV photodetectors with different p‐AlGaN layer thicknesses is investigated. The results reveal an anomalous reduction in peak responsivity under zero bias when the p‐AlGaN layer thickness is relatively thin. Further investigations indicate that this anomaly can be attributed to the additional Schottky junction formed between the p‐AlGaN layer and metal. The quality and thickness design of the p‐AlGaN layer play a crucial role in enhancing the performance of back‐illuminated p–i–n AlGaN solar‐blind photodetectors.

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High-Temperature Forward and Reverse Current Transport Mechanisms of AlGaN-Based Solar-Blind UV Photodetector

Cited by 8 publications

References 44 publications

Unipolar carrier multiplication high-gain and low-noise AlGaN ultraviolet avalanche photodiode with periodically stacked structure

Unipolar carrier multiplication high-gain and low-noise AlGaN ultraviolet avalanche photodiode with periodically stacked structure

1D Core@Dual‐Shell Radial Heterojunction for Unipolar Barrier Solar‐Blind Avalanche Photodetector

Mechanisms Affecting the Anomalous Responsivity of Back‐Illuminated p–i–n AlGaN Solar‐Blind Photodetectors

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