High temperature (&gt;400 K) ferromagnetism in III–V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

Hashimoto, Masahiko; Zhou, Yikai; Kanamura, Masahito; Asahi, H.

doi:10.1016/s0038-1098(02)00073-x

Cited by 214 publications

(116 citation statements)

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“…, with multiple exchange interactions indicating that its decay cannot be easily fit to classical description of ferromagnetism, again in agreement with current theories concerning DMS systems with low carrier concentrations. The Cr + implanted GaN at 3 ×10 16 ions cm −2 and annealed at 900°C showed magnetic moment at lower temperatures, retaining magnetization above the measured temperature of 380 K. This observation is consistent with the epitaxial prepared (Ga,Cr)N magnetic properties observed by Hashimoto et al who have reported T C higher than 400 K [35]. The value of Ms was higher for the sample annealed at 900°C compared to the sample annealed at 800°C.…”

Section: Agm and Squidsupporting

confidence: 90%

“…The influence of transition metal (TM) impurities on the electrical properties of both n-GaN and p-GaN has been reported [32][33][34]. Hashimoto et al [35] have grown epitaxial GaCrN films by electron-cyclotron-resonance molecular beam epitaxy (MBE). The films showed ferromagnetic behaviour with a Tc higher than 400 K. To the best of our knowledge, there is currently no information on the magnetization of Cr-implanted GaN, at high fluences, in the literature.…”

Section: Introductionmentioning

confidence: 99%

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Metal Ions Implantation‐Induced Effects in GaN Thin Films

Husnain¹,

Madhuku²

2017

Ion Implantation - Research and Application

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Section: Agm and Squidsupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Metal Ions Implantation‐Induced Effects in GaN Thin Films

Husnain¹,

Madhuku²

2017

Ion Implantation - Research and Application

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“…Over the past decade, scientists and engineers around the world have shown significant interest in the investigations of metallic nitrides (e.g., GaN, AlN, InN, CrN, TiN [1][2][3][4][5][6][7]) with dopants such as Si [1], Al [8], Mn, C [8] and Cr [4][5][6][7] owing to their unique properties, e.g. large band-gap [2][3][9][10][11], high surface acoustic velocity [2], corrosion resistance [2], oxidation resistance [12], excellent chemical and thermal stability as well as mechanical robustness [13].…”

Section: Introductionmentioning

confidence: 99%

Near-edge X-ray absorption fine structure studies of Cr1−xMxN coatings

Rahman

Duan

Jiang

et al. 2013

Journal of Alloys and Compounds

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Near-edge X-ray absorption fine structure studies of Cr 1-x M x N coatings, (2013), doi: http://dx.doi.org/10. 1016/ j.jallcom.2013.06.021 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. AbstractCr 1-x M x N coatings, with doping concentrations (Si or Al) varying from 14.3 to 28.5 at.%, were prepared on AISI M2 tool steel substrates using a TEER UDP 650/4 closed field unbalanced magnetron sputtering system. Near-edge X-ray absorption fine structure (NEXAFS) characterization was carried out to measure the aluminum and silicon Kedges, as well as chromium L-edge, in the coatings. Two soft X-ray techniques, Auger electron yield (AEY) and total fluorescence yield (TFY), were employed to investigate the surface and inner structural properties of the materials in order to understand the structural evolution of CrN matrix with addition of Al (or Si) elements. Investigations on the local bonding states and grain boundaries of the coatings, using NEXAFS technique, provide significant information which facilitates understanding of the local electronic 2 structure of the atoms and shed light on the origins of the high mechanical strength and oxidation resistance of these technologically important coatings.

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“…Group III-nitride semiconductors doped with 3d transition-metal (TM) such as Mn or Cr show the ferromagnetism with high Curie temperature, and it seems that their band structures are suitable for the spin-injection [1][2][3][4]. For instance, recent experimental work has been reported that the Crdoped InN shows long range magnetic order above room temperature [5].…”

Section: Introductionmentioning

confidence: 99%

Effects of Nitrogen Defect on Magnetism of Cu-doped InN: First-principles Calculations

Kang¹,

Chae²,

Lee³

2013

Journal of Magnetics

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We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy (V N ) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of V N defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and V N states, the spin-polarization on the Cu atoms in the InN lattice is reduced by V N defect. So, it shows a weak ferromagnetic behavior.

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High temperature (>400 K) ferromagnetism in III–V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

Cited by 214 publications

References 10 publications

Metal Ions Implantation‐Induced Effects in GaN Thin Films

Metal Ions Implantation‐Induced Effects in GaN Thin Films

Near-edge X-ray absorption fine structure studies of Cr1−xMxN coatings

Effects of Nitrogen Defect on Magnetism of Cu-doped InN: First-principles Calculations

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