High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

Ciuk, Tymoteusz; Stańczyk, B.; Przyborowska, Krystyna; Czołak, D.; Dobrowolski, A.; Jagiełło, Joanna; Kaszub, Wawrzyniec; Kozubal, M.; Kozłowski, Roman; Kamiński, P.

doi:10.1109/ted.2019.2915632

Cited by 26 publications

(16 citation statements)

References 31 publications

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“…For example, in the bottom monitoring stage, the computational capacity of monitoring nodes is weak and it is difficult to store or replace the nodes; in the edge layer, the characteristics of monitors distributed in the deep sea, requiring large energy consumption for moving and transmitting data are considered, so the model selected shall be maximized to ensure the monitoring accuracy. In order to minimize the energy consumption of sensor nodes, the data transmission process is evolved into a data monitoring model, which makes use of the edge computing performance and the collected data [7][8].…”

Section: A Sensor Data Sensing and Acquisition Based On Edge Computingmentioning

confidence: 99%

Research on Abnormal Monitoring of Sensor Data of Stadiums Based on Internet of Things Technology

Che

Zhang

2021

IEEE Access

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The abnormal monitoring of sensor data in stadiums is of great significance to the deployment and design of IoT technology. Because the nodes that need to be monitored in the stadium are scattered, the monitoring sequence of traditional sensor nodes is chaotic, resulting in large deviations in detection results, and when the number of nodes is large, the remaining energy is low. In order to establish an effective and intelligent stadium temperature sensing device, This paper proposes a method for monitoring anomalies in stadium perception data based on edge computing and time series. According to the stadium sensor network structure based on edge computing, it is divided into cloud layer, edge layer and bottom layer, with the goal of minimizing energy consumption. Analyze mobile edge computing elements and design sensor data storage and distribution solutions. The time series is used to mine the anomalous data of the stadium. On this basis, taking the temperature of the stadium as an example, the abnormal monitoring result of the sensor data of the stadium is obtained. In order to verify the effectiveness of the proposed method, a simulation experiment is designed. Experimental results show that the detection accuracy of this method is high, and the residual energy of nodes has no obvious downward trend. The experimental results verify the ideal application performance of the proposed method.

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Section: A Sensor Data Sensing and Acquisition Based On Edge Computingmentioning

confidence: 99%

Research on Abnormal Monitoring of Sensor Data of Stadiums Based on Internet of Things Technology

Che

Zhang

2021

IEEE Access

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“…Протягом останніх років триває активне дослідження магнітних сенсорів на основі графену [1][2][3][4]. Інтерес до них зумовлено тим, що обсяг світового ринку магнітних сенсорів досягне за оцінками експертів у 2022 р.…”

Section: вступunclassified

“…Визначена в наявних у літературі роботах температурна залежність чутливості в діапазоні температур (300 ÷ 573) K є спаданою, що якісно відповідає проведеному вище аналізу. Температурний коефіцієнт такої залежності в грубому лінійному наближенні, використаному попередніми авторами, було оцінено як -0,02%/К, а при ще більш підвищених температурах в інтервалі (573 ÷ 770) K як -0,06%/К [3].…”

Section: загальна експериментальна ситуаціяunclassified

“…Як видно з рис. 2, значення температурного коефіцієнту чутливості досліджуваних сенсорів в інтервалі температур до 400 К становить (0,03 ÷ 0,05)%/К, що за порядком величини відповідає даним в роботі [3]. При температурах вищих за 400 К починається різке зменшення чутливості.…”

Section: температурна залежність чутливості сенсорів холла на основі одношарового графенуunclassified

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Dependence of Maximal Sensitivity of the Magnetic Field Hall Sensors Based on Graphene on Temperature

Bolshakova¹,

Стріха²,

Kost³

et al. 2021

SEMST

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A theory of graphene-based magnetic field Hall sensors sensitivity dependence on temperature is summarized. The existence of low-temperature range with sensitivity, almost independent on temperature, is predicted; at higher temperatures, when thermally-induced carrier concentration in graphene prevails, the sensitivity decreases with temperature. The experimental studies of the temperature dependence of magnetic sensitivity of Hall sensors on single layer graphene base were carried in temperature range from 300 °K to 430 °K. The values of sensitivity, obtained for room temperatures ~ 230 V·А‑1·Т‑1 exceed essentially the maximum sensitivity of the traditional Hall sensors on silicon base ~ 100 V·А‑1·Т‑1.

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“…The different schemes in constructing photodetectors are examined. Ciuk et al (2019) had designed a Hall sensor device. The device consists of graphene grown on a 4H‐silicon carbide substrate.…”

Section: Introductionmentioning

confidence: 99%

Hall effect sensors using polarized electron cloud spin orientation control

Arumona

Garhwal

Youplao

et al. 2020

Microscopy Res & Technique

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A silicon microring circuit embedded gold film with unique characteristics is proposed for Hall effect, current, and temperature sensing applications. The microring circuit is operated by the input polarized laser sources, in which the space–time distortion control can be employed. A gold film is embedded at the microring center. The whispering gallery mode (WGM) is generated and applied for plasmonic waves, from which the trapped electron cloud oscillation is formed. Through the input port, the input polarized light of 1.55 μm wavelength fed into the space–time control circuit. Spin‐up |↑〉(|0〉) and spin‐down |↓〉(|1〉) of polarized electrons result when the gold film is illuminated by the WGM. The electric current passing through the gold film generates a magnetic field (B), which is orthogonal to the electric field. Hall voltage is obtained at the output of the circuit, from which the microring space–time circuit can operate for Hall's effect, current, and temperature sensing device. The simulation results obtained have shown that when the input power of 100–500 mW is applied, the optimum Hall effect, current, and temperature sensitivities are 0.12 μVT−1, 0.9 μVA−1, and 6.0 × 10−2 μVK−1, respectively. The Hall effects, current, and temperature sensors have an optimum response time of 1.9 fs.

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High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

Cited by 26 publications

References 31 publications

Research on Abnormal Monitoring of Sensor Data of Stadiums Based on Internet of Things Technology

Research on Abnormal Monitoring of Sensor Data of Stadiums Based on Internet of Things Technology

Dependence of Maximal Sensitivity of the Magnetic Field Hall Sensors Based on Graphene on Temperature

Hall effect sensors using polarized electron cloud spin orientation control

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