High-temperature heat capacity and thermal expansion of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SrTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SrZrO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mm

Ligny, Dominique de; Richet, Pascal

doi:10.1103/physrevb.53.3013

Cited by 339 publications

(182 citation statements)

References 32 publications

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“…The coefficient of thermal expansion for Ge is approximately one order of magnitude less than a composition-averaged value for SHTO alloys [26][27][28] ; over the 500-650°C annealing window the x-value that matches the Ge separation distance decreases from x ∼ 0.4 to x ∼ 0.3. We sought to determine how interface strain influenced crystallization.…”

Section: Deposition and Crystallization Of Shf X Ti 1−x O 3 Filmsmentioning

confidence: 99%

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

McDaniel

Posadas

et al. 2016

MRS Communications

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This work reports the growth of crystalline SrHf x Ti 1−x O 3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225°C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ∼530°C (x = 0) to ∼660°C (x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm 2 leakage current at 1 MV/cm for x = 0.55.

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Section: Deposition and Crystallization Of Shf X Ti 1−x O 3 Filmsmentioning

confidence: 99%

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

McDaniel

Posadas

et al. 2016

MRS Communications

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“…was estimated by adding the computed zero-field values of the excess specific heat to the lattice contributions taken from experimental data [86].…”

Section: Incipient Ferroelectric Materialsmentioning

confidence: 99%

Electrothermal properties of perovskite ferroelectric films

et al. 2009

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The electrothermal (electrocaloric and pyroelectric) properties of ferroelectric thin films have many applications in active solid-state cooling and infrared sensing devices. It has been shown experimentally that some thin-film ferroelectrics can produce much larger electrothermal responses than their bulk counterparts. In this work, the electrothermal properties of bulk polar dielectric (ferroelectric and incipient ferroelectric) materials and thin films have been computed using a thermodynamic methodology and the effects of electrical, thermal and mechanical boundary conditions have been illustrated. In particular, the sensitivity of pyroelectric and electrocaloric response to bias and driving fields, lateral clamping and misfit strain, thermal stresses and composition have been demonstrated. The computations show that the electrothermal behavior of ferroelectric materials for practical cooling devices depends on a complex interplay of several related sets of physical phenomena. These include the nature of the ferroelectric transition, the particular dependence of the equilibrium and transport properties on electric field and mechanical boundary constraints, and the orientation and thermal expansion coefficients of the thin film and substrate materials. The combined results provide insights concerning how the composition and orientation of the thin film material, the choice of substrate, the deposition/annealing temperature, and the electrode configuration can be used to optimize the electrothermal properties for particular applications.

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“…The cracking can be explained by the deviations of thermal expansion properties of the two solid phases, tausonite and rutile, which crystallize simultaneously from the melt upon reaching the eutectic temperature. The difference of the thermal expansion coefficient is more than one order of magnitude [4,9]. Moreover, a concave interface leads to a higher density of grown-in dislocations which also may cause cracking.…”

Section: Crystal Growth and Characterizationmentioning

confidence: 99%

Top-seeded solution growth of SrTiO3 crystals and phase diagram studies in the SrO–TiO2 system

et al. 2014

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The TiO 2 rich part of the (1 − x) SrO + x TiO 2 phase diagram 0.5 ≤ x ≤ 1.0 was redetermined and the eutectic point between SrTiO 3 and TiO 2 was found at x eut = 0.7700 ± 0.0001; T eut = (1449 ± 3) • C. From TiO 2 rich melt solutions, x = 0.75 centimetersized single crystals could be grown. The best crystals with etch pit density < 2 × 10 4 /cm 2 were obtained for growth directions 110 and 100 . AFM investigation of the interface reveals layer-by-layer growth.

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High-temperature heat capacity and thermal expansion ofSrTiO3andSrZrO3

Cited by 339 publications

References 32 publications

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

Electrothermal properties of perovskite ferroelectric films

Top-seeded solution growth of SrTiO3 crystals and phase diagram studies in the SrO–TiO2 system

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