High-temperature high-sensitivity AlN-on-SOI Lamb wave resonant strain sensor

Abstract

A piezoelectric AlN-on-SOI structured MEMS Lamb wave resonator (LWR) is presented for high-temperature strain measurement. The LWR has a composite membrane of a 1 μm thick AlN film and a 30 μm thick device silicon layer. The excited acoustic waves include Rayleigh wave and Lamb waves. A tensile strain sensor has been prepared with one LWR mounted on a uniaxial tensile plate, and its temperature characteristics from 15.4°C to 250°C and tensile strain behaviors from 0 με to 400 με of Rayleigh wave and S4 mode Lamb wave were tested. The temperature test verifies the adaptability of the tensile strain sensor to temperature up to 250°C, and S4 mode Lamb wave and Rayleigh wave represent almost the same temperature characteristics. The strain test demonstrates that S4 mode Lamb wave shows much higher strain sensitivity (-0.48 ppm/με) than Rayleigh wave (0.05 ppm/με) and confirms its advantage of strain sensitivity. Finally, for this one-LWR strain sensor, a method of beat frequency between S4 mode Lamb wave and Rayleigh wave is proposed for temperature compensation and high-sensitivity strain readout.

Wireless Passive LC Temperature and Strain Dual-Parameter Sensor

“…Table 1 presents a comparison of the sensor developed in this study with previously reported sensors [ 15 , 36 , 38 , 39 ]. The sensor proposed herein has the following advantages: The strain range is sufficiently large to monitor a relatively larger range of strain changes.…”

“…When the sensor is placed in a temperature-strain compound environment, put the temperature value into the formula to get the effect of temperature on strain, and then get the actual strain value. Table 1 presents a comparison of the sensor developed in this study with previously reported sensors [15,36,38,39]. The sensor proposed herein has the following advantages: Table 1 presents a comparison of the sensor developed in this study with previously reported sensors [15,36,38,39].…”

Machine learning-augmented surface-enhanced spectroscopy toward next-generation molecular diagnostics

“…73–85 The nanofabrication technologies for preparing SEIRA/SERS substrates include chemical preparation methods, photolithography, electron beam lithography, magnetron sputtering, electron beam evaporation, and more. 86–107 The widely used theory for modeling SERS/SEIRA includes perturbation theory, 108 temporal coupled-mode theory, 109,110 coupled harmonic oscillator theory, 111 and so on. As mentioned earlier, machine learning is complementary to SERS/SEIRA and offers unparalleled possibilities for solving pressing challenges related to spectral artifacts, overlapping, and huge volumes of spectral data (Fig.…”

Contribution of Ribbon-Structured SiO2 Films to AlN-Based and AlN/Diamond-Based Lamb Wave Resonators

“…Recently, various electro-acoustic devices based on aluminum nitride thin film technology have also been proposed for frequency control and sensing applications at high temperature [ 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ]. Some of these devices are based on bulk acoustic waves (BAW), following either thin-film bulk acoustic resonator technologies (FBAR), or solidly mounted resonator technologies (SMR) [ 18 , 19 , 20 ].…”