2007
DOI: 10.1063/1.2736272
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High-temperature interband cascade lasers emitting at λ=3.6–4.3μm

Abstract: Articles you may be interested inDouble metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24μm Appl. Phys. Lett. 105, 121115 (2014); 10.1063/1.4896542 Room-temperature operation of 3.6 μ m In 0.53 Ga 0.47 As / Al 0.48 In 0.52 As quantum cascade laser sources based on intracavity second harmonic generation Room-temperature, high-power, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ 9.6 μ m Appl. Phys. Lett. 88, 201114 (2006); 10.1063/1.2205730High-temperature co… Show more

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Cited by 24 publications
(15 citation statements)
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“…5 In optoelectronics, thin films of AlSb are being used in active regions and superlattice structures for claddings in novel type-II infrared cascade lasers. [6][7][8] Such lasers, emitting wavelengths around 3-4.3 µm, find application, for example, in remote atmospheric chemical sensing. Aluminum antimonide is particularly interesting in these applications because it has a large 2.1 eV conduction band offset with InAs, which often comprises the other key component in the active layers of these devices.…”
Section: Introductionmentioning
confidence: 99%
“…5 In optoelectronics, thin films of AlSb are being used in active regions and superlattice structures for claddings in novel type-II infrared cascade lasers. [6][7][8] Such lasers, emitting wavelengths around 3-4.3 µm, find application, for example, in remote atmospheric chemical sensing. Aluminum antimonide is particularly interesting in these applications because it has a large 2.1 eV conduction band offset with InAs, which often comprises the other key component in the active layers of these devices.…”
Section: Introductionmentioning
confidence: 99%
“…Since the measurement temperature was 10 K, the influence of nonradiative recombination processes could be excluded. 16,17 Our experimental data were fitted by a stretched exponential line shape I͑t͒ = I 1 ͑0͒exp͑−t / 1 ͒ + I 2 ͑0͒exp͓͑−t / 2 ͒ ␤ ͔, which has been used to analyze the emission characteristics of localized system. 16,17 The parameter I͑t͒ means the PL intensity at time t, ␤ is the dimensionality of the localizing centers, and 1 and 2 are the initial lifetimes of carriers.…”
Section: Resultsmentioning
confidence: 99%
“…16,17 Our experimental data were fitted by a stretched exponential line shape I͑t͒ = I 1 ͑0͒exp͑−t / 1 ͒ + I 2 ͑0͒exp͓͑−t / 2 ͒ ␤ ͔, which has been used to analyze the emission characteristics of localized system. 16,17 The parameter I͑t͒ means the PL intensity at time t, ␤ is the dimensionality of the localizing centers, and 1 and 2 are the initial lifetimes of carriers. Both fast lifetime 1 and slow lifetime 2 increased from 0.88 to 1.75 ns and from 1.60 to 2.49 ns, respectively, as the measurement wavelength was changed from 376 to 400 nm, suggesting carriers trapping at localized states and their transfer from higher energy states to lower energy states.…”
Section: Resultsmentioning
confidence: 99%
“…7,8 The designs of the devices with ten active cascade stages were similar to that in Ref. 4, except that the thicknesses of the InAs quantum wells were adjusted (at fixed GaInSb hole well thickness) to vary the emission wavelength.…”
Section: Growth and Processingmentioning
confidence: 99%
“…Recent results at T = 78 K include >1 W of continuous wave (cw) power from a broad stripe, 2 260 mW into a nearly diffraction-limited beam from a narrow ridge, 3 and wallplug efficiency up to 27%. 4 There have also been significant improvements in the high-temperature performance, with the maximum cw operating temperatures steadily rising and threshold current densities gradually falling. 5,6 In this work we discuss the detailed pulsed characterization of four ICLs operating at a variety of wavelengths, which taken together span the entire mid-IR spectral band.…”
Section: Introductionmentioning
confidence: 98%