High-temperature investigation of ZnS:Ga and CdSe:Ga

Lott, K.; Nirk, T.; Volobujeva, Olga; Shinkarenko, S.; Türn, L.; Kallavus, Urve; Grebennik, A.; Vishnjakov, A.

doi:10.1016/j.physb.2005.12.191

Cited by 3 publications

(5 citation statements)

References 11 publications

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“…To do this, we first obtain the total amount of cadmium atoms in a particle at a given time. In order to do this, the diameter of the particle is calculated by using the empirical fitting function of the CdSe sizing curve, which is given by the equation below. where D (nm) is the size of a given nanocrystal sample and λ (nm) is the wavelength of the first excitation peak. As we show later, the CdSe QD size is not significantly affected by addition of few percent of gallium.…”

Section: Experimental Sectionmentioning

confidence: 99%

“…In an ideal n-type semiconductor, electrons from the donor level are ionized into the conduction band at room temperature due to the extra electron being weakly bound to the dopant atom. Gallium has been reported as an n-type dopant in thin films of CdSe . Because of the higher ionization temperature shown by tin and indium, gallium was chosen for investigation in the hopes that the 4p orbital would align with the QDs 1S e conduction band level at room temperature to provide increased donor electron occupation.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and Characterization of Gallium-Doped CdSe Quantum Dots

et al. 2015

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Developing electronic doping of colloidal quantum dots is important for basic science and technology. In this article, the doping of colloidal CdSe quantum dots with gallium atoms is reported. Gallium doping of CdSe quantum dots produces important changes in electronic and optical properties of the material. The gallium doping shows a significant impact on the growth kinetics of quantum dots, which reveals important clues about the mechanism of the gallium dopant incorporation into the CdSe. The results show that the gallium doping significantly impacts the conductivity of CdSe thin film made of the quantum dots as well as the photoluminescence and chemical reactivity of the quantum dots, in agreement with the expected ntype character.

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Section: Experimental Sectionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Gallium-Doped CdSe Quantum Dots

et al. 2015

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“…7,10,38 In stark contrast with Ga doping, an increased donor electron occupation can be observed even close to room temperature. 41 It has also been demonstrated that Ga-doped CdSe QDs have stronger temperature dependent photoluminescence quenching and a shortened excitonic lifetime due to the increased dopant ionization above room temperature. 10 CdSe QDs with a similar n-type character were also prepared using a photochemical approach in the presence of a hole scavenger under inert atmospheric conditions.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Depending on the foreign element used, markedly different energy levels can be introduced into the semiconductor band structure. In the case of Sn- or In-doped CdSe QDs, the introduced donor electrons are not excited into the CB at room temperature. ,, In stark contrast with Ga doping, an increased donor electron occupation can be observed even close to room temperature . It has also been demonstrated that Ga-doped CdSe QDs have stronger temperature dependent photoluminescence quenching and a shortened excitonic lifetime due to the increased dopant ionization above room temperature .…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependent Carrier Dynamics in Ga-Alloyed CdSe/ZnS Core–Shell Quantum Dots

Sárosi,

Tuinenga,

Samu

et al. 2024

J. Phys. Chem. C

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In this work, temperature dependent transient absorption spectroscopy measurements are presented on galliumalloyed CdSe/ZnS core−shell nanoparticles between 30 and 130 °C. To our knowledge, temperature dependent measurements in these systems have been reported only in a few papers, although all processes related to carrier recombination are affected by temperature. For these experiments, gallium-alloyed CdSe/ZnS QD samples were used with nominal doping percentages of 2.5%, 7.5%, 15%. The experimental results show that the transient absorption decay is faster for the pristine CdSe/ZnS samples than in the gallium-alloyed samples at all temperatures. It is assumed that Ga-alloying promotes the formation of trions in the samples by introducing occupied impurity levels within the bandgap of CdSe. The resulting Coulomb blockade will, in turn, prolong the hot-electron relaxation process. By variation of the temperature, the distribution of charge carriers in the different recombination channels can be altered to accelerate recombination in the Ga-alloyed samples at higher temperatures. These measurements demonstrated their usefulness for observing the redistribution of charge carriers among different relaxation pathways.

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“…Many investigators suggest that the formation of impurity-native defect complex should limit the effective concentration of donors in II-VI compounds. It was also found the differences in doping mechanisms of Al and Ga in II-VI compounds [4,5]. At high level group III dopant concentrations, the mechanisms of doping are related to the solubility of dopants.…”

Section: Introductionmentioning

confidence: 99%

High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

Lott

Shinkarenko

Volobujeva

et al. 2007

Physica Status Solidi (b)

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High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe : In and of CdSe : In are compared. There are differencies in In-doping mechanisms of II -VI compounds. When HTEC isotherms and isobars of ZnSe : In and of CdSe : In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the results of measurements under the selenium vapor pressure (

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High-temperature investigation of ZnS:Ga and CdSe:Ga

Cited by 3 publications

References 11 publications

Synthesis and Characterization of Gallium-Doped CdSe Quantum Dots

Synthesis and Characterization of Gallium-Doped CdSe Quantum Dots

Temperature Dependent Carrier Dynamics in Ga-Alloyed CdSe/ZnS Core–Shell Quantum Dots

High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

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