“…This was observed by Rosner and Allendorf [14] in the case of very low pressures (10-2-10 Pa) and at high temperatures (1750-2400 K) on pyrolytic SiC. According to these authors, in contradiction to the thermodynamical prediction, for any temperature below 2100 K, passive behaviour occurs for a much lower reactant pressure with O(g) than with O2(g ).…”
Section: Experiments Under Dissociated Oxygenmentioning
The active to passive transition in the oxidation of sintered 0~-SiC has been determined by a thermodynamic approach and then experimentally under flowing air at high temperatures (1673-1973 K) and low pressures (oxygen partial pressure from 200-2100 Pa). Then, the physico-chemical behaviour of samples was compared for two different environments such as air-plasma atmosphere generated by microwaves, and a molecular atmosphere. The thermodynamic calculation does not predict any variation of the oxidation transition when changing the chemical state of oxygen (Q2 or O) but experimentally the domain characterized by the formation of a passive layer of silica is extended to lower pressure under atomic oxygen (for the same temperature range) than in the case of molecular oxygen.
“…This was observed by Rosner and Allendorf [14] in the case of very low pressures (10-2-10 Pa) and at high temperatures (1750-2400 K) on pyrolytic SiC. According to these authors, in contradiction to the thermodynamical prediction, for any temperature below 2100 K, passive behaviour occurs for a much lower reactant pressure with O(g) than with O2(g ).…”
Section: Experiments Under Dissociated Oxygenmentioning
The active to passive transition in the oxidation of sintered 0~-SiC has been determined by a thermodynamic approach and then experimentally under flowing air at high temperatures (1673-1973 K) and low pressures (oxygen partial pressure from 200-2100 Pa). Then, the physico-chemical behaviour of samples was compared for two different environments such as air-plasma atmosphere generated by microwaves, and a molecular atmosphere. The thermodynamic calculation does not predict any variation of the oxidation transition when changing the chemical state of oxygen (Q2 or O) but experimentally the domain characterized by the formation of a passive layer of silica is extended to lower pressure under atomic oxygen (for the same temperature range) than in the case of molecular oxygen.
“…Hydrogen was included in all the experiments as literature on nitriding silicon indicates enhanced kinetics when hydrogen is present. [3] The resulting exposed particles were characterized using x-ray diffraction (XRD) on a Panalytical Xpert Diffractometer, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) on Hitachi microscopes models 3400 and 4800, and Thermo Scientific K-Alpha X-ray Photoelectron Spectroscopy (XPS) using a Thermo Scientific K-Alpha. Continuous Θ-2Θ scans were performed on the Panalytical Xpert diffractometer from nominally 5 to 80° 2Θ in under 60 min.…”
Section: Methodsmentioning
confidence: 99%
“…Rosner and Allendorf [3] investigated oxidation and nitridation of SiC in dissociated gases using a fast flow vacuum technique. Thus their measurements related to removal of SiC and thus the kinetics are not instructive for TRISO fuel.…”
“…The temperature of transition from active to passive conditions depends on the environment parameters such as pressure, concentration, and composition of oxidant components, as well as availability of carbon and other side components (including technical additives, determining the chemical bond energy between carbon and carbide during SiC covering formation) in the ¦lm. In some cases [1], the transition from active to passive conditions can be attributed to the temperature of 1967 K. More detailed information can be found in [2].…”
Section: Figure 1 Possible CM Applications In Lrementioning
Computational and experimental investigations of thermochemical resistance of carbon-ceramic composites in the combustion products of liquid rocket engine (LRE) are presented. The tests with model extensions made of the composite material (CM) were performed. The test time was about 200 s. The maximal temperature of the material ¦re surface was 1600 K. Physical and numerical model of silicon carbide destruction was developed.
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