1970
DOI: 10.1021/j100704a002
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High-temperature kinetics of the oxidation and nitridation of pyrolytic silicon carbide in dissociated gases

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Cited by 90 publications
(48 citation statements)
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“…This was observed by Rosner and Allendorf [14] in the case of very low pressures (10-2-10 Pa) and at high temperatures (1750-2400 K) on pyrolytic SiC. According to these authors, in contradiction to the thermodynamical prediction, for any temperature below 2100 K, passive behaviour occurs for a much lower reactant pressure with O(g) than with O2(g ).…”
Section: Experiments Under Dissociated Oxygenmentioning
confidence: 83%
“…This was observed by Rosner and Allendorf [14] in the case of very low pressures (10-2-10 Pa) and at high temperatures (1750-2400 K) on pyrolytic SiC. According to these authors, in contradiction to the thermodynamical prediction, for any temperature below 2100 K, passive behaviour occurs for a much lower reactant pressure with O(g) than with O2(g ).…”
Section: Experiments Under Dissociated Oxygenmentioning
confidence: 83%
“…Hydrogen was included in all the experiments as literature on nitriding silicon indicates enhanced kinetics when hydrogen is present. [3] The resulting exposed particles were characterized using x-ray diffraction (XRD) on a Panalytical Xpert Diffractometer, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) on Hitachi microscopes models 3400 and 4800, and Thermo Scientific K-Alpha X-ray Photoelectron Spectroscopy (XPS) using a Thermo Scientific K-Alpha. Continuous Θ-2Θ scans were performed on the Panalytical Xpert diffractometer from nominally 5 to 80° 2Θ in under 60 min.…”
Section: Methodsmentioning
confidence: 99%
“…Rosner and Allendorf [3] investigated oxidation and nitridation of SiC in dissociated gases using a fast flow vacuum technique. Thus their measurements related to removal of SiC and thus the kinetics are not instructive for TRISO fuel.…”
Section: Nitriding Kinetics Calculationsmentioning
confidence: 99%
“…The temperature of transition from active to passive conditions depends on the environment parameters such as pressure, concentration, and composition of oxidant components, as well as availability of carbon and other side components (including technical additives, determining the chemical bond energy between carbon and carbide during SiC covering formation) in the ¦lm. In some cases [1], the transition from active to passive conditions can be attributed to the temperature of 1967 K. More detailed information can be found in [2].…”
Section: Figure 1 Possible CM Applications In Lrementioning
confidence: 99%