High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

Abstract

Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns-V c analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V c of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V c. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V c reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation

Reduction of Threading Dislocation Density in Sputtered Ge/Si(100) Epitaxial Films by Continuous-Wave Diode Laser-Induced Recrystallization

“…CW diode laser annealing has been used to achieve electrical activation and good lattice reordering in ion-implanted Si and as a replacement of rapid thermal annealing for defect reduction in polycrystalline Si solar cells. , The CW diode laser was first employed to reduce TDD in sputter-deposited single-crystalline Ge epitaxial films on Si in our previous work through annealing at a temperature below the Ge melting point . However, even after multiple cycles of laser scans, the TDD reduction is limited by 2 orders of magnitude due to the re-emission of dislocations .…”

Fabrication of Multilayer Pb(Zr0.53Ti0.47)O3 Film Crystallized by Laser Annealing

“…LA can generate sufficient heat in selected areas instantly and has been used in the manufacture of solar cells and power devices. [6][7][8][9] Many researchers have attempted to apply this technique to PZT crystallization since three decades ago. [10][11][12][13][14][15][16][17][18] Some of them use ultraviolet lasers for the direct annealing of PZT films, 11,12,14,16,17) because the photon energy is higher than the band gap energy of PZT and can be strongly absorbed.…”

Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

“…Defect healing TA treatments, such as rapid thermal processing and laser annealing, have been used to apply plateau temperatures ranging from 900 C to 1400 C for a short time (<1 min). [20][21][22][23][24][25][26] For the LPC process, 10 lm thick nanocrystalline silicon layers with a boron doping of around 4 Â 10 16 cm À3 are deposited on SiO and SiO/SiC coated glass substrates by electron-beam evaporation. The silicon layers are recrystallized by scanning a line-shaped electron beam focus across the sample, locally melting the silicon.…”