We present the photoluminescence spectra obtained in the case of normal incidence of exciting radiation at both polished and unpolished surfaces of chemicalvapour deposited ZnSe films in the temperature range 12-300 K. The luminescence has been excited using either a continuous-wave He-Cd laser with the wavelength λ ex = 325 nm (i.e., under the condition hv ex > E g for the photon energy) or a semiconductor laser with λ ex = 532 nm (i.e., hv ex < E g). We show that the temperature dependences of intensity, spectral position and half-width of a green photoluminescence band detected in the both alternative cases are very different in the region 12-80 K. However, their behaviours become very close to each other when the temperature increases up to 180 K. Finally, the above spectral parameters are almost the same in the region 180-300 K.