High-temperature operation of 640 nm wavelength high-power laser diode arrays

Imanishi, Daisuke

doi:10.7567/jjap.56.032702

Cited by 4 publications

(2 citation statements)

References 35 publications

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“…The output power of the bar was 7 W, with a W.P.E. of 15.4% under CW condition in 2005, and 33.7% in 2017 [15]. The lasing wavelengths were 640 nm and 644 nm, respectively.…”

Section: Development History Of Red High Power Lds For Displays To Datementioning

confidence: 99%

World highest wall plug efficiency 638-nm red high-power broad area laser diode

Kuchimura,

Morita,

Tanisaka

et al. 2024

High-Power Diode Laser Technology XXII

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Laser displays require red, green, and blue broad area laser diodes (BA-LDs) for their light sources. The requirements for the LDs are high output with high wall plug efficiency (W.P.E.) Blue and green LDs consist of AlInGaN/GaN. The former has been reported with W.P.E. above 50%. The latter has low one around 24%, but the luminosity of the green light is quite high compared to blue and red, so the W.P.E doesn't become a big problem so far. The red color shows lower luminosity as the wavelength gets longer. Therefore, short wavelengths such as 638 nm are chosen for red LD for the display. The highest one of 42% at CW operation, 25℃, was reported by other two researchers so far in this wavelength BA-LDs. We developed the 638-nm BA-LD. The LD chip had a similar stripe geometry to the reported one with a cavity length of 1.5 mm and dual stripe geometry with a stripe width of 75 m each. A window-mirror structure was also implemented, and the chip was mounted on a 9 TO-can in a junction-down configuration. As a result, the peak W.P.E of 42.3% was achieved, 0.3 points higher than the previous report. The power dissipation related to the threshold current accounts for a large part of the total dissipation. Each stripe width of 60 m was chosen to reduce the threshold current, and the LD showed the world's highest of 44.9% under this condition. This value was approximately 7% (2.9 points) higher than the reported value.

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“…The output power of the bar was 7 W, with a W.P.E. of 15.4% under CW condition in 2005, and 33.7% in 2017 [15]. The lasing wavelengths were 640 nm and 644 nm, respectively.…”

Section: Development History Of Red High Power Lds For Displays To Datementioning

confidence: 99%

World highest wall plug efficiency 638-nm red high-power broad area laser diode

Kuchimura,

Morita,

Tanisaka

et al. 2024

High-Power Diode Laser Technology XXII

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“…In recent years, Al 0.52 In 0.48 P has been used in a variety of applications including, laser diodes [1], solar cells [2], and underwater communication systems [3]. Lately, it has also attracted research attention for its use in direct conversion nuclear microbatteries, which convert the energy released during decay of a radioisotope into electrical energy.…”

Section: Introductionmentioning

confidence: 99%

6μm thick AlInP⁵⁵Fe x-ray photovoltaic and⁶³Ni betavoltaic cells

Butera

Whitaker

Krysa

et al. 2018

Semicond. Sci. Technol.

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Two 400 m diameter Al0.52In0.48P p +-in + mesa photodiodes (6 m i layer) were fabricated from a wafer grown by metalorganic vapour phase epitaxy (MOVPE) and then studied at temperatures from 140 °C to-20 °C for the development of temperature tolerant 55 Fe X-ray photovoltaic and 63 Ni betavoltaic microbatteries. The Al0.52In0.48P epitaxial layers are the thickest so far reported for this emerging application. At each temperature, the performances of the Al0.52In0.48P detectors were analysed in dark conditions, as well as under the illumination of a 182 MBq 55 Fe radioisotope X-ray source and a 185 MBq Ni radioisotope source. An open circuit voltage as high as 1.13 V was found for both the Al0.52In0.48P X-ray photovoltaic cells at-20 °C; whilst an open circuit voltage of 0.47 V was found for the best 63 Ni betavoltaic cell, at the same temperature. Maximum output powers of 1.44 pW and 1.36 pW were obtained from the two X-ray photovoltaic cells at-20 °C; combining the output powers of these two Al0.52In0.48P X-ray photovoltaic cells, a total maximum output power as high as 2.8 pW could be obtained at-20 °C. Maximum output powers of 0.18 pW and 0.13 pW were instead extracted from the two betavoltaic cells at-20 °C, these could lead to a total maximum output power as high as 0.3 pW at-20 °C. Conversion efficiencies of 2.2% and 0.06% were found, respectively, for the best Al0.52In0.48P X-ray photovoltaic and betavoltaic cells at-20 °C. With respect to previously reported Al0.52In0.48P X-ray photovoltaic cells with thinner i layers, the 6 m Al0.52In0.48P Xray photovoltaic cells had higher short circuit current, open circuit voltage, maximum output power, and conversion efficiency. The 6 m Al0.52In0.48P betavoltaic cells instead presented similar performances to previously analysed Al0.52In0.48P betavoltaic cells.

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