2007
DOI: 10.1109/tadvp.2007.898628
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High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment

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Cited by 148 publications
(52 citation statements)
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“…To avoid the use of pressure (which requires dedicated tooling), researchers at the Virginia Tech. have presented a silver sintering solution using nanometre-sized powder [23], [24]. This solution gives good results compared to Epoxy-based die attach or Au-Ge solders [25].…”
Section: High Temperature/reliability Packagingmentioning
confidence: 99%
“…To avoid the use of pressure (which requires dedicated tooling), researchers at the Virginia Tech. have presented a silver sintering solution using nanometre-sized powder [23], [24]. This solution gives good results compared to Epoxy-based die attach or Au-Ge solders [25].…”
Section: High Temperature/reliability Packagingmentioning
confidence: 99%
“…Due to the size effect, the melting point of silver particles in nano and micro scale is far below that of silver bulk [10], [23]- [26]. By applying a certain pressure and temperature of above 220 °C, silver particles will be melted and sintered spontaneously under the effect of liquid phase capillary force.…”
Section: A) Nano Silver Sinteringmentioning
confidence: 99%
“…Above 200°C Si devices experience latch-up at reverse bias junctions and leakages [57]. SiC power devices exist with operating temperatures up to 200°C [126][127][128][129], but the maximum temperature of a SiC power module for example is limited to about 150°C [130,131]. A commercial high temperature SiC module has been reported operating at 250°C [132]; however, reservations exist over its reliability above 200°C.…”
Section: Electro Chemical Double Layermentioning
confidence: 99%