High temperature performance of LDMOSFETs used in RFIC applications

Absfracf-This paper presents the first resultsof a 1-GHz SO1 RF power LDMOSFET with 115 mW of output power. A 6-W POUT (competitive with comparable bulk LDMOSTs) can be achieved by scaling the FET dimensions with little degradation of RF performance. Both DC and RF characteristics are presented, and model parameters are extracted. Class A amplifier results are shown to deliver a PAE of 25%, power gain of 16 dB, and 1-dB compression of 40 mW. These results are extremely encouraging for IPA development with SO1 RF power LDMOSFETs.

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High temperature performance of LDMOSFETs used in RFIC applications

Cited by 2 publications

References 3 publications

Microwave performance of power MOSFETs on SOI substrates

Microwave performance of power MOSFETs on SOI substrates

A silicon-on-insulator 28-V RF power LDMOSFET for 1-GHz integrated power amplifier applications

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