High temperature reliability of aluminium wire-bonds to thin film, thick film and low temperature co-fired ceramic (LTCC) substrate metallization

Johannessen, Rolf; Oldervoll, Frøydis; Strisland, Frode

doi:10.1016/j.microrel.2008.06.008

Cited by 12 publications

(7 citation statements)

References 3 publications

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“…Thermomechanical stress management is an important consideration in the design of high performance reliable multichip module-based electronic devices [1][2][3][4]. There is thus a significant requirement for development of novel materials and methods to increase the efficiency and reliability of each component [5][6][7][8][9][10][11][12]. The heat sink (or base plate) should dissipate the heat produced in the electronic chip and also give some mechanical resistance to the electronic packaging.…”

Section: Introductionmentioning

confidence: 99%

Thermal expansion coefficient and thermal fatigue of discontinuous carbon fiber-reinforced copper and aluminum matrix composites without interfacial chemical bond

et al. 2013

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International audienceFully dense carbon fiber-reinforced copper and aluminum matrix (Cu-CF and Al-CF) composites were fabricated by hot press without the need for an interfacial chemical compound. With 30 vol% carbon fiber, the thermal expansion coefficients (TECs) of pure Cu and Al were decreased to 13.5 × 10−6 and 15.5 × 10−6/K, respectively. These improved TECs of Cu-CF and Al-CF composites were maintained after 16 thermal cycles; moreover, the TEC of the 30 vol% Cu-CF composite was stable after 2500 thermal cycles between −40 and 150 °C. The thermal strain caused by the TEC mismatch between the matrix and the carbon fiber enables mechanical enhancement at the matrix/carbon fiber interface and allows conservation of the improved TECs of Cu-CF and Al-CF composites after thermal cycles

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Section: Introductionmentioning

confidence: 99%

Thermal expansion coefficient and thermal fatigue of discontinuous carbon fiber-reinforced copper and aluminum matrix composites without interfacial chemical bond

et al. 2013

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“…Mechanical sensors or any circuits subjected to significant loads should therefore be designed to keep such pads away from zones possibly subjected to high tensile stresses. Alternatively, going to a clad system, consisting of an Ag thickfilm process with subsequent chemical coating of pads by a Ni-Au sequence, should avoid issues with Ag:Pd conductors while improving other manufacturing [33] and reliability aspects in harsh environments [34].…”

Section: Discussionmentioning

confidence: 99%

Long-term mechanical reliability of ceramic thick-film circuits and mechanical sensors under static load

Maeder

Jacq

Ryser

2012

Sensors and Actuators A: Physical

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In this work, we study the long-term mechanical strength under static load -i.e. static fatigue performance or resistance to subcritical crack growth -of ceramic thick-film circuits, namely how the static fatigue of the substrate is affected by the presence of thick-film compositions on the surface subjected to tensile stress. Three substrate materials were compared: standard 96% alumina (Al 2 O 3 ) and two grades of high-strength zirconia-toughened alumina (ZTA). The tested thick-film compositions included Ag-and Au-based conductors, a multilayer dielectric, resistors, and an overglaze, alone or in combination. The tests were carried out by applying a nominally constant load on cantilevers, at room temperature and in nominally 100% humidity, with stress data extracted according to log-normal and Weibull statistics. In the blank state, both ZTA grades exhibit higher short-term strength than 96% Al 2 O 3 , as well as much higher resistance to static fatigue. However, many thick-film compositions are found to degrade the static fatigue performance, with higher-strength ZTA being in general more affected. This implies that thick-film materials used in circuits under high mechanical stress, such as force and pressure sensors and devices operating in harsh environments, must be carefully chosen and placed in order to ensure reliable long-term operation.

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“…Other work [12] has shown that Au/Ni plating with a top surface Au thickness of <1 mm to be stable, although lifetimes may be limited to a few years at 250 C. The resistance of the wire bonded joints will increase over time and the wire bond pull strengths will diminish as the Al-1%Si wire exhibits annealing and recrystallization. The Au-Al intermetallic formation may also be accelerated due to reactions with outgassed materials within the package cavity.…”

Section: Al-1%si Wire Bonds To Au Metallizations On Ceramic Substrmentioning

confidence: 99%

Effectiveness of Barrier Layer Metallizations in Long Term High Temperature Endurance Tests on Wire Bond Interconnections

Riches¹,

Johnston²,

Lui³

2013

Journal of Microelectronics and Electronic Packaging

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AbstractÀSilicon on insulator (SOI) device technology has been shown to be capable of functioning satisfactorily at operating temperatures of >2008C, with device lifetimes of 5 y at 2258C being declared. One of the key areas governing the lifetime of the packaged electronic devices is the reliability of the wire bond interconnection between the device and the package or substrate connection. Extended temperature storage testing at 2508C of packaged SOI devices has highlighted end of life failure modes associated with wire bond connections.SOI devices are normally supplied with an aluminum based bond pad metallization, which are not suitable for direct connection of Au wire at operating temperatures of >1258C, due to the formation of Au-Al intermetallics. It is possible to postprocess silicon wafers to deposit barrier and connection materials to create a monometallic Au-Au joint at the surface. For long term endurance at temperatures >2008C, the effectiveness of the barrier layer in preventing diffusion of the aluminum bond pad metallization to interact with the Au is a critical factor. This paper presents results of studies carried out on two postprocess metallization systems Au/TiW and Au/Pd/Ni deposited onto aluminum bond pads, which have been Au wire bonded and exposed to 2508C temperature storage for up to 13,000 h. The results have shown that the barrier layers are not effective in preventing diffusion of the aluminum bond pad metallization to create Au-Al based intermetallics. The results are compared with Al-1%Si wire bonding to the aluminum bond pad, where the second wedge bond is attached to a Au/Ni plated metallization, where the degradation appears to be less severe. Recommendations for designing stable wire bond interconnection systems for extended high temperature operation will be presented.

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High temperature reliability of aluminium wire-bonds to thin film, thick film and low temperature co-fired ceramic (LTCC) substrate metallization

Cited by 12 publications

References 3 publications

Thermal expansion coefficient and thermal fatigue of discontinuous carbon fiber-reinforced copper and aluminum matrix composites without interfacial chemical bond

Thermal expansion coefficient and thermal fatigue of discontinuous carbon fiber-reinforced copper and aluminum matrix composites without interfacial chemical bond

Long-term mechanical reliability of ceramic thick-film circuits and mechanical sensors under static load

Effectiveness of Barrier Layer Metallizations in Long Term High Temperature Endurance Tests on Wire Bond Interconnections

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