High temperature resistant interconnection for SiC power devices using Ni micro-electroplating and Ni nano particles

High-temperature resistant interconnection using Ni nanoparticles and Al microparticles paste sintered in an atmosphere

“…The authors proposed a mounting technology using Ni nanoparticles as a bonding material, and it has been reported that a bonding material using Ni particles with a particle size of 100 nm or less can be bonded at a bonding temperature of 400 °C and under pressure, and that direct bonding to an Al surface is possible under atmospheric heating. [41][42][43] Because the melting point of Ni is over 1400 °C, we expect that it is applicable to not only the 250 °C temperature condition required for power devices in the current automotive field but also the conditions of temperature exceeding 500 °C required in the aerospace field. In our previous study, bonding material based on Ni nanoparticles had problems related to the formation of cracks and large voids in the bonding phase; the addition of micro-sized Al particles to Ni nanoparticles reduced the formation of cracks and voids.…”

“…In this study, Al electrodes were used for the bonding surface of the Si chip because previous studies have shown that Ni nanoparticle bonding materials can be bonded to Al surfaces. 43,44) 2. Experimental methods…”

High-temperature Resistant Interconnections Formed by Ni Nanoparticles/Al Micro-particles Composite Paste for SiC Power Device Application

“…[20][21][22] A previous study reported that Ni nanoparticles can directly bond with Al in the atmosphere, even though Al does bond easily in soldering without flux processing. [23,24] For example, a previous study conducted bonding experiments under different atmospheres using Si dummy chips with vacuum-deposited Al and Ni nanoparticles (Fig. 1).…”