High—temperature Sensors Based on SiC and Diamond Technology

Werner, M.; Krötz, G.; ller, Helmut M; Eickhoff, Martin; Gluche, P.; Adamschik, M.; Johnston, Colin; Chalker, Paul R.

doi:10.1002/1616-8984(199904)5:1<141::aid-seup141>3.0.co;2-j

Cited by 24 publications

(17 citation statements)

References 88 publications

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“…A summary of published piezoresistive data for both α - and β -SiC through 2001 was presented by Werner et al (Fig. 33) [328]. …”

Section: Alternative Piezoresistive Materialsmentioning

confidence: 99%

“…Complete reviews of SiC-based MEMS and NEMS, especially for harsh environment applications, are available elsewhere [321], [328], [337]–[340]. …”

Section: Alternative Piezoresistive Materialsmentioning

confidence: 99%

“…Diamond is also an attractive new material for micromechanical devices for elevated temperatures and harsh environments [321], [328], [341], [342]. Superior properties, compared to silicon, include physical hardness, higher Young’s modulus, higher tensile yield strength, greater chemical inertness, lower coefficient of friction, and higher thermal conductivity.…”

Section: Alternative Piezoresistive Materialsmentioning

confidence: 99%

See 2 more Smart Citations

Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

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“…A summary of published piezoresistive data for both α - and β -SiC through 2001 was presented by Werner et al (Fig. 33) [328]. …”

Section: Alternative Piezoresistive Materialsmentioning

confidence: 99%

“…Complete reviews of SiC-based MEMS and NEMS, especially for harsh environment applications, are available elsewhere [321], [328], [337]–[340]. …”

Section: Alternative Piezoresistive Materialsmentioning

confidence: 99%

Section: Alternative Piezoresistive Materialsmentioning

confidence: 99%

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Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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“…For instance, in pipeline systems, gas flow sensors, strain sensors, and pressure sensors are required to measure the pressure level, monitor pipeline cracks, as well as detect gas leakage4. Additionally, in industries involving fuel combustion such as aerospace and automotive systems, temperature and pressure sensors are vital devices in the feedback control to enhance the performance of engines56. Among various technologies utilized in mechanical sensors, the piezoresistive effect has several advantages, such as device miniaturization, low power consumption, and simple read out circuits7891011.…”

mentioning

confidence: 99%

Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

Phan

Dinh

Kozeki

et al. 2016

Sci Rep

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Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

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“…The proliferation over the past few years of novel materials such as wide-bandgap semiconductors, including GaN and SiC, and their growing applications in RF/power electronics as well as M/NEMS [22][23][24][25][26][27][28][29] , suggests that they can create exciting opportunities and potentially replace silicon in many areas, including in the design of the device proposed in this study. They can also offer electrical and mechanical properties that match and even exceed those of silicon.…”

Section: Discussion Scaling and Performance Improvementmentioning

confidence: 49%

Nanoelectromechanical resonant narrow-band amplifiers

2016

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This study demonstrates amplification of electrical signals using a very simple nanomechanical device. It is shown that vibration amplitude amplification using a combination of mechanical resonance and thermal-piezoresistive energy pumping, which was previously demonstrated to drive self-sustained mechanical oscillation, can turn the relatively weak piezoresistivity of silicon into a viable electronic amplification mechanism with power gains of 420 dB. Various functionalities ranging from frequency selection and timing to sensing and actuation have been successfully demonstrated for microscale and nanoscale electromechanical systems. Although such capabilities complement solid-state electronics, enabling state-of-the-art compact and high-performance electronics, the amplification of electronic signals is an area where micro-/nanomechanics has not experienced much progress. In contrast to semiconductor devices, the performance of the proposed nanoelectromechanical amplifier improves significantly as the dimensions are reduced to the nanoscale presenting a potential pathway toward deep-nanoscale electronics. The nanoelectromechanical amplifier can also address the need for ultranarrow-band filtering along with the amplification of lowpower signals in wireless communications and certain sensing applications, which is another need that is not efficiently addressable using semiconductor technology.

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High—temperature Sensors Based on SiC and Diamond Technology

Cited by 24 publications

References 88 publications

Review: Semiconductor Piezoresistance for Microsystems

Review: Semiconductor Piezoresistance for Microsystems

Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

Nanoelectromechanical resonant narrow-band amplifiers

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