2015
DOI: 10.1109/mie.2014.2360350
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High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors

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Cited by 73 publications
(28 citation statements)
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“…L ext is the inductance of the circuit board track connecting all of the parallel-connected devices, I load is the total load current in all k parallel-connected devices, V miller (k) is the Miller gate voltage necessary for a single device carrying I load /k drain current, V gg_h is the gate drive voltage in the high state, and V d is the voltage drop across the diode in the opposing device in the half-bridge. The first step is to find the drain-source voltage, v ds (t 2 ), at time t 2 , which is given by (7). (7) L d is the drain inductance of a single device.…”
Section: Si Mosfet Switching Lossmentioning
confidence: 99%
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“…L ext is the inductance of the circuit board track connecting all of the parallel-connected devices, I load is the total load current in all k parallel-connected devices, V miller (k) is the Miller gate voltage necessary for a single device carrying I load /k drain current, V gg_h is the gate drive voltage in the high state, and V d is the voltage drop across the diode in the opposing device in the half-bridge. The first step is to find the drain-source voltage, v ds (t 2 ), at time t 2 , which is given by (7). (7) L d is the drain inductance of a single device.…”
Section: Si Mosfet Switching Lossmentioning
confidence: 99%
“…SiC devices improve 2-level converter efficiency even whilst operating with increased switching frequency, thus also reducing filter bulk, loss and cost [7][8][9][10], compared with traditional IGBT 2-level converters. However, increased efficiency brought by SiC comes with the risk of increased EMI caused by the rapid switching transients, combined with the greater EMI generated as switching frequency is increased in order to reduce filter loss and bulk.…”
Section: Introductionmentioning
confidence: 99%
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“…Finally, the thermal resistance of SiC devices is smaller than that of Si (typically three times), this aiming to increase the power density of the device or decrease the device operational temperature. However, SiC technology shows limitation to the maximum exploitation of the potential benefits of this technology due to the packaging, particularly in terms of high temperature feature, power density, parasitic inductance and electro-magnetic noise [1][2][3][4].…”
Section: Introductionmentioning
confidence: 99%
“…All of these advantages lead to higher efficiency circuits operating at elevated temperature. Recently, silicon carbide‐based MOSFETS, JFETS, and BJTs have been successfully tested up to temperatures of 200°C . Power converters for hybrid electric vehicles not only require high‐temperature switches but also high‐temperature capacitors.…”
Section: Introductionmentioning
confidence: 99%