High temperature SOI CMOS technology and circuit realization for applications up to 300°C

Kappert, Holger; Kordas, Norbert; Dreiner, S.; Paschen, Uwe; Kokozinski, Rainer

doi:10.1109/iscas.2015.7168845

Cited by 31 publications

(14 citation statements)

References 4 publications

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“…The military-grade temperature range for electronics is -55 °C to 125 °C [3]. There are commercial electronics claimed to be utilized for environments at temperatures up to 250 °C [4], and silicon oxide-based pressure sensors are reported to maintain performance at 300 °C [5].…”

Section: Introductionmentioning

confidence: 99%

Thermomechanical properties and performance of ceramic resonators for wireless pressure reading at high temperatures

Sturesson

Khaji

Knaust

et al. 2015

J. Micromech. Microeng.

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Thermomechanical properties and performance of ceramic resonators for wireless pressure reading in high temperatures. Micromechanics and Microengineering, 25(9) Abstract -This paper reports on the design, fabrication and thermomechanical study of ceramic LC resonators for wireless pressure reading, verified at room temperature, at 500 °C and at 1000 °C for pressures up to 2.5 bar. Five different devices were fabricated of high-temperature co-fired ceramics (HTCC) and characterized. Alumina green tape sheets were screen printed with platinum paste, micromachined, laminated and fired. The resulting samples were 21 x 19 mm 2 with different thicknesses. An embedded communicator part was integrated with either a passive backing part or with a pressure-sensing element, including an 80 µm thick and 6 mm diameter diaphragm. The study includes measuring thermally and mechanically induced resonance frequency shifts, and thermally induced deformations. For the pressure sensor device, contributions from changes in the relative permittivity and from expanding air, trapped in the cavity, were extracted. The devices exhibited thermomechanical robustness during heating, regardless of the thickness of the backing. The pressure sensitivity decreased with increasing temperature from 15 050 ppm/bar at room temperature to 2400 ppm/bar at 1000°C, due to the decreasing pressure difference between the external pressure and the air pressure inside the cavity. Journal of

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Section: Introductionmentioning

confidence: 99%

Thermomechanical properties and performance of ceramic resonators for wireless pressure reading at high temperatures

Sturesson

Khaji

Knaust

et al. 2015

J. Micromech. Microeng.

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“…This introduces a limiting factor for the efficient operation of power modules, particularly at high temperatures since silicon and silicon-on-insulator (SOI) based devices are limited to approximately 125 °C and 250 °C, respectively [41], [42]. To operate in high temperature environments without a significant degradation in product lifetime, these circuits require dedicated cooling solutions that increase costs and add parasitic elements.…”

Section: Sic Integrated Circuit Designmentioning

confidence: 99%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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Abstract-The emergence of wide bandgap power semiconductor devices has opened the possibilities of improved electrical performance and power density. Advanced research into wide bandgap power electronics also includes advances in integrated circuit design, semiconductor device modeling, 3D electronic packaging, and computer-aided design of wide bandgap based electronics. These emerging trends are described along with some early results indicating the additional improvements possible in power density. Operation at extreme temperatures also becomes more feasible.Index Terms-Gallium nitride, power integrated circuits, power semiconductor devices, power electronics, silicon carbide, wide bandgap semiconductors.

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“…In an SOI technology the insulation is based on silicon oxide and the pn-junctions are more or less fully removed resulting in a strong reduction of leakage currents. Analog circuits get feasible even at high temperature up to about 300°C [4]. Higher temperatures require a different approach (e.g.…”

Section: Temperature Stable Cmos Circuitsmentioning

confidence: 99%

Materials and technologies to enable high temperature stable MEMS and electronics for smart systems used in harsh environments

Gabler

Roscher

Döring

et al. 2016

2016 China Semiconductor Technology International Conference (CSTIC)

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High temperature SOI CMOS technology and circuit realization for applications up to 300°C

Cited by 31 publications

References 4 publications

Thermomechanical properties and performance of ceramic resonators for wireless pressure reading at high temperatures

Thermomechanical properties and performance of ceramic resonators for wireless pressure reading at high temperatures

Emerging Trends in Silicon Carbide Power Electronics Design

Materials and technologies to enable high temperature stable MEMS and electronics for smart systems used in harsh environments

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