High temperature stability of CrSi(W)N films

Brückner, W.; Grieβmann, H.; Mönch, J.; Schubert, Gunnar; Heinrich, A.

doi:10.1016/0040-6090(92)90807-n

Cited by 9 publications

(2 citation statements)

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“…The reported stability data reflect the properties of the pure CrSi system without passivation. For comparison with protected films in the paper of Brueckner et al , corresponding data for CrSi films are reported and analyzed. Regarding the aging rate of the films, the authors found the typical Arrhenius behavior.…”

Section: Resultsmentioning

confidence: 99%

“…He showed that the extension of the commonly used time-dependent Arrhenius law to a temperature-time analysis yields reliable results regarding the stability prediction of real thin film resistors. The cited stability studies [12,13] allow the conclusion that our stability data for unprotected CrSi films can be significantly improved by applying the usual passivation procedures.…”

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confidence: 99%

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CrSi(O,N)-based cermet-like material for high-ohmic thin film resistor applications

Vinzelberg

Schumann

2015

Phys. Status Solidi A

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The thin film material CrSi(O,N) has been investigated with the aim to realize resistive films with precision properties in the resistivity range between 2 and 20 mΩcm. The resistor layers were prepared by radio‐frequency magnetron sputtering from cermet targets containing all functionally required film components. The influence of typical technological parameters as argon pressure, source power, and target–substrate distance on the film properties was studied. Depending on target composition, preparation conditions, and thermal treatment, the attainable resistivity limits of the precision parameters temperature coefficient of resistivity (TCR) and long time stability (ΔR/R) were determined. It could be shown that two of the studied target materials achieve the resistivity range 2 mΩcm < ρ < 20 mΩcm with the resistor parameters TCR of 10 ppm K−1 and ΔR/R of <0.2%.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%