High temperature stability of rapidly solidified Al-Mn-Ni alloys

Structure and Property Stability of Rapidly Solidified In-Sn γ-Phase Alloy

“…In-Sn alloy is one of the few alloys which can satisfy the packaging of semiconductor devices which have high-power and highly integrated density.This kind of semiconductors need solve the problems like excessive packaging temperature,thermal diffusion,thermal stress and biotoxicity,etc.In-Sn alloys have low melting point,low strength and good surface wettablity.Related studies show that Sn can improve the bonding reliability of solder with the addition of a certain amount of In.For high-power semiconductor lasers,mainly using pure In and In-Sn eutectic alloy to package can prevent Smile-effect of laser bars.The reduction in the content of In can lower the cost.The direction which is more promising is to add another element based on In-Sn γ-phase(Sn content:70~85%) [1][2][3][4] .Most of the studies concentrate on the influence of the third component and the problems between solder and substrate,the process,in which alloy solidify and form small brazing joint on the Cu surface,is actually a more complicated process. Among of them,the solid non-equilibrium structure,which is the result of non-equilibrium solidification caused by highly solidified speed,can influence the packaging property obviously.Owing to the limitation of the packaging sample structure and the complexity of the non-equilibrium crystallization process,this kind of studies had been rarely involved.Relevant rapidly solidified studies(The structures and property studies of other rapidly solidified alloys) show that the micrograin and the texture which appeared in the rapidly solidified structure can change the features of the material [5][6][7][8] .…”