High-temperature stability of the mechanical and optical properties of Si–B–C–N films prepared by magnetron sputtering

Kalaš, J.; Vernhes, Richard; Hřeben, S.; Vlček, Jaroslav; Klemberg-Sapieha, J.E.; Martinů, L.

doi:10.1016/j.tsf.2009.06.017

Cited by 28 publications

(7 citation statements)

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“…The first group (B-free) is repeated for completeness from the previous work [ 41 ], the second and third group (B-containing) are considered for the first time. The [B]/[C] ratio of 4 which characterizes the third group is motivated by the experimentally used [ 18 , 19 , 21 , 25 ] B 4 C sputter target.…”

Section: Methodsmentioning

confidence: 99%

“…Amorphous Si-B-C-N alloys are of high and long-term interest [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 ] because of unique combinations of functional properties such as high hardness [ 4 , 17 ], high optical transparency combined with controllable refractive index at some compositions [ 18 , 19 ] and controllable electrical conductivity at other compositions [ 20 , 21 ], strong absorption of electromagnetic waves [ 13 , 22 ], high photodetection sensitivity [ 23 ], strong photoluminescence [ 5 ], low leakage current [ 24 ] or giant piezorezistivity [ 14 ]. In parallel, proper Si-B-C-N compositions exhibit exceptionally high oxidation resistance up to 1500 °C [ 2 , 25 ], thermal stability of the amorphous networks up to 1700 °C [ 1 , 25 ], long-time (tested for 12 years) ageing resistance [ 19 ], low thermal expansion coefficient [ 2 ] and, perhaps most importantly, high-temperature stability of the aforementioned functional properties [ 18 , 25 ]. This makes the Si-B-C-N alloys very attractive for numerous applications ranging from high-temperature protective coatings to electronics and optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

“…Bulk Si-B-C-N materials are often prepared by pyrolysis (recent review [ 10 ]) or mechanical alloying followed by sintering (recent review [ 12 ]). Thin films of Si-B-C-N can grow from isolated atoms (which is most relevant for the present work; usually using magnetron sputtering) [ 4 , 5 , 6 , 17 , 18 , 19 ], or from chemical precursors [ 15 , 26 , 27 ]. There have been numerous efforts to capture the role of individual elements and the relationships between their concentrations ([Si], [B], [C] and [N] total— not to be confused with [N] network defined below; all given in at.%) and materials properties.…”

Section: Introductionmentioning

confidence: 99%

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Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials

Houška

2021

Materials

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Amorphous Si-B-C-N alloys can combine exceptional oxidation resistance up to 1500 °C with high-temperature stability of superior functional properties. Because some of these characteristics require as high N content as possible, the maximum achievable N content in amorphous Si-B-C-N is examined by combining extensive ab initio molecular dynamics simulations with experimental data. The N content is limited by the formation of unbonded N2 molecules, which depends on the composition (most intensive in C rich materials, medium in B rich materials, least intensive in Si-rich materials) and on the density (increasing N2 formation with decreasing packing factor when the latter is below 0.28, at a higher slope of this increase at lower B content). The maximum content of N bonded in amorphous Si-B-C-N networks of lowest-energy densities is in the range from 34% to 57% (materials which can be grown without unbonded N2) or at most from 42% to 57% (at a cost of affecting materials characteristics by unbonded N2). The results are important for understanding the experimentally reported nitrogen contents, design of stable amorphous nitrides with optimized properties and pathways for their preparation, and identification of what is or is not possible to achieve in this field.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials

Houška

2021

Materials

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“…This study is a part of an overall program of our laboratories at UTA and UWB conducted to develop new, sufficiently hard, thin-film materials in the Hf-B-Si-C-N system with a controlled electrical conductivity and optical transparency, and with ultrahigh thermal stability in air. When the excellent oxidation resistance at elevated temperatures of thin-film materials is combined with a high optical transparency (e.g., as in the case of Si–B–C–N films 30,31 ), they can be used for high-temperature protective coatings of electronic and optical elements. Alternatively, a combination of the high oxidation resistance and electrical conductivity is desirable for harsh-environment sensors, such as capacitive pressure, vibration and tip clearance sensors (e.g., for advanced gas turbine engines 33–36 ).…”

Section: Introductionmentioning

confidence: 99%

Microstructure evolution in amorphous Hf-B-Si-C-N high temperature resistant coatings after annealing to 1500 °C in air

Shen

Jiang

Zeman

et al. 2019

Sci Rep

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Recently, amorphous Hf-B-Si-C-N coatings found to demonstrate superior high-temperature oxidation resistance. The microstructure evolution of two coatings, Hf 7 B 23 Si 22 C 6 N 40 and Hf 6 B 21 Si 19 C 4 N 47 , annealed to 1500 °C in air is investigated to understand their high oxidation resistance. The annealed coatings develop a two-layered structure comprising of the original as-deposited film followed by an oxidized layer. In both films, the oxidized layer possesses the same microstructure with HfO 2 nanoparticles dispersed in an amorphous SiO x -based matrix. The bottom layer in the Hf 6 B 21 Si 19 C 4 N 47 coating remains amorphous after annealing while Hf 7 B 23 Si 22 C 6 N 40 recrystallized partially showing a nanocrystalline structure of HfB 2 and HfN nanoparticles separated by h-Si 3 N 4 and h-BN boundaries. The HfB 2 and HfN nanostructures form a sandwich structure with a HfB 2 strip being atomically coherent to HfN skins via (111)-Hf monolayers. In spite of the different bottom layer structure, the oxidized/bottom layer interface of both films was found to exhibit a similar microstructure with a fine distribution of HfO 2 nanoparticles surrounded by SiO 2 quartz boundaries. The high-temperature oxidation resistance of both films is attributed to the particular evolving microstructure consisting of HfO 2 nanoparticles within a dense SiO x -based matrix and quartz SiO 2 in front of the oxidized/bottom layer interface acting as a barrier for oxygen and thermal diffusion.

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“…Diffraction silent amorphous Si-B-C-(N) coat ings can be obtained by reactive magnetron sputtering of Si, B, and graphite targets in an N 2 -Ar atmosphere [9,[14][15][16]. A promissory challenge to elemental tar gets is the use of three component Si-B-C ones.…”

Section: Introductionmentioning

confidence: 99%

Silicon carbide ceramics SHS-produced from mechanoactivated Si–C–B mixtures

Potanin

Zvyagintseva

Pogozhev

et al. 2015

Int. J Self-Propag. High-Temp. Synth.

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We investigated the influence of mechanical activation (MA) and initial temperature T 0 on combustion temperature T c and burning velocity U c for 90% (Si + C) -10% (4B + C) mixtures as well as on product morphology. Mechanical activation was found to strongly change the size and morphology of Si and graphite particles (by a factor of 6-8), lead to accumulation of micro strains, and increase the reactivity of green mixture. An increase in T 0 was found to proportionally increase the values of T c and U c but produce little or no influence on the phase composition of product. The SiC powder consisting of 50-100 nm crystal lites was obtained by diminution of combustion product and then used to prepare, by hot pressing, a ceramic PVD target for magnetron sputtering.

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High-temperature stability of the mechanical and optical properties of Si–B–C–N films prepared by magnetron sputtering

Cited by 28 publications

References 28 publications

Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials

Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials

Microstructure evolution in amorphous Hf-B-Si-C-N high temperature resistant coatings after annealing to 1500 °C in air

Silicon carbide ceramics SHS-produced from mechanoactivated Si–C–B mixtures

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