High-temperature stages of the annealing of radiation defects in refractory BCC metals

Zakharova, M. I.; Соловьев, В. А.; Bykov, V. N.

doi:10.1007/bf01208865

Cited by 7 publications

(4 citation statements)

References 9 publications

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“…Stage IV recovery, at 0:22T m , is still subject to debate [14], being generally attributed to vacancy-impurity complexes [33], or di-vacancies [17]. Recent DFT simulations have shown that di-vacancies are not favoured in tungsten [34].…”

Section: Previous Recovery Studiesmentioning

confidence: 97%

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High temperature annealing of ion irradiated tungsten

et al. 2015

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Transmission electron microscopy of high temperature annealing of pure tungsten irradiated by self-ions was conducted to elucidate microstructural and defect evolution in temperature ranges relevant to fusion reactor applications (500-1200°C). Bulk isochronal and isothermal annealing of ion irradiated pure tungsten (2 MeV W + ions, 500°C, 10 14 W + /cm 2 ) with temperatures of 800, 950, 1100 and 1400°C, from 0.5 to 8 h, was followed by ex situ characterisation of defect size, number density, Burgers vector and nature. Loops with diameters larger than 2-3 nm were considered for detailed analysis, among which all loops had b ¼ 1 2 h1 1 1i and were predominantly of interstitial nature. In situ annealing experiments from 300 up to 1200°C were also carried out, including dynamic temperature ramp-ups. These confirmed an acceleration of loop loss above 900°C. At different temperatures within this range, dislocations exhibited behaviour such as initial isolated loop hopping followed by large-scale rearrangements into loop chains, coalescence and finally line-loop interactions and widespread absorption by free-surfaces at increasing temperatures. An activation energy for the annealing of dislocation length was derived, finding E a ¼ 1:34 AE 0:2 eV for the 700-1100°C range.

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Section: Previous Recovery Studiesmentioning

confidence: 97%

“…Higher temperature recovery stages in tungsten have been largely un-researched since the 1970s, with interpretation being limited to resistivity measurements and early FIM experiments [17,33,20].…”

Section: Previous Recovery Studiesmentioning

confidence: 99%

High temperature annealing of ion irradiated tungsten

et al. 2015

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“…During irradiation at relatively low-temperatures the annihilation of these defect clusters is slow because of the low mobility of point defects to sinks. At higher irradiation temperatures such thermally activated annihilation or recovery of properties occurs at a faster rate by different mechanisms [6,35]. The annihilation behavior of such defect clusters has been measured by microhardness, positron annihilation, or electrical resistivity techniques [6,38].…”

Section: Yield Stress and Irradiation Hardeningmentioning

confidence: 99%

“…Measurable irradiation hardening is found only in ODS Mo specimens tested below room-temperature and in a few TZM Mo specimens tested at 600 and 700°C. The difference in irradiation hardening between the temperature ranges, below and above $700°C, can be explained by the difference in the mobility of point defects in those temperature ranges [4][5][6][32][33][34][35][36][37]. Irradiation hardening usually results from the formation of numerous fine point defect clusters, dislocation loops, or voids, depending on irradiation temperature.…”

Section: Yield Stress and Irradiation Hardeningmentioning

confidence: 99%