The growth was monitored by in-situ RHEED (reflection high energy electron diffraction). Fig. S1(a) shows the time dependence of intensity of specular reflection (0,0), recorded during the growth of NdNiO 3 (NNO) film on NdGaO 3 (NGO) substrate and layer-by-layer growth has been confirmed by the sharp drops during ablation and gradual recovery within next few seconds to the same level of intensity after the deposition of each unit cell. Inset of Fig. S1(b) shows RHEED pattern for the NNO film, recorded after cooling to room temperature. The streak patterns of specular and off-specular: (0 1), (0-1) reflections (in pseudo cubic (p.c.) notation) confirm the desired two-dimensional surface morphology. X-ray diffraction: Success of epitaxial growth along [0 0 1] p.c. has been further confirmed by 2θ-ω scan in X-ray diffraction (Fig. S1(b)). Each diffraction pattern consists of a sharp substrate peak, a broad film peak (indicated by solid triangle in Fig. S1(b)) and thickness fringes, arises due to the finite thickness of film. Out-of plane lattice constant (c p.c. of NNO films are found to be 3.75Å (STO), 3.78Å (NGO), 3.83Å (SPGO), 3.84Å (SLAO) and 3.86Å (YAO) and these follow the expected tetragonal distortion relation for the cube on cube growth.