High‐Temperature Tensile Deformation of Glass‐Doped 3Y‐TZP

Imamura, P.H.; Evans, N. D.; Sakuma, Taketo; Mecartney, Martha L.

doi:10.1111/j.1151-2916.2000.tb01688.x

Cited by 13 publications

(9 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Imamura et al also reported that covalency would affect on tensile ductility in glass-doped TZP. 15) Our calculation reveals that substitution of Ge 4+ or Ti 4+ ions reinforces covalent bonding strength in a bulk of TZP. In cation-doped TZP, the segregation of dopant cations at grain boundary is observed through TEM-EDS analysis.…”

Section: Chemical Bonding Sates In Geo 2 or Tio 2 -Doped Tzpmentioning

confidence: 72%

Local Bonding States of Titanium and Germanium-doped Tetragonal Zirconia Polycrystal and Their Correlation to High Temperature Ductility

et al. 2002

Self Cite

View full text Add to dashboard Cite

The chemical bonding states of GeO 2 and/or TiO 2 -doped tetragonal zirconia polycrystal (TZP) are calculated by a first principle molecular orbital method using model clusters. It is clarified that Ge 4+ and Ti 4+ ions, which are substituted into a lattice of TZP, have a high covalent bond with oxygen ions rather than Zr-O bond. Covalency of TZP is more increased by solution of germanium ions than that of titanium ones. In superplastic deformation of TZP, an addition of GeO 2 or TiO 2 enhances tensile ductility of TZP. Germanium ion is more effective to improve ductility than titanium. The increment of covalency is in a good agreement with the improvement of elongation to failure in doped TZP. Dopant cations segregate at grain boundaries and form no secondary phase. Assuming that a dopant effect on chemical bonding states in grain boundaries is similar to that in grain interior, segregation of germanium or titanium ion increases covalent bonding strength nearby grain boundaries. Such increasing of covalency is likely to enhance cohesion of grain boundaries. The enhancement of grain boundary cohesion suppresses intergranular failure during tensile deformation at elevated temperatures. This must be the reason why an addition of GeO 2 and TiO 2 is effective to improve the high temperature ductility of TZP. Our calculation suggests that the covalency nearby grain boundaries have a critical role in the tensile ductility of TZP.

show abstract

Section: Chemical Bonding Sates In Geo 2 or Tio 2 -Doped Tzpmentioning

confidence: 72%

Local Bonding States of Titanium and Germanium-doped Tetragonal Zirconia Polycrystal and Their Correlation to High Temperature Ductility

et al. 2002

Self Cite

View full text Add to dashboard Cite

show abstract

“…The lower temperature plasticity of ceramics combined with high strength might improve their in-service reliability through metal-like behavior. Two strategies are generally chosen to improve plasticity at relatively low temperatures [7][8][9][10]: (1) decreasing grain size to several nanometers to promote grain boundary sliding; (2) accelerating grain boundary diffusion with low melting point sintering additives. However, it is di cult to sinter dense nanoceramics with grains of less than 10 nm.…”

Section: Introductionmentioning

confidence: 99%

“…Nanocrystalline silicon carbide doped with boron and carbon was found to show a superplastic elongation of > 140% at 1800°C with a yield stress of 80 MPa [8]. In Imamura et al's studies about high-temperature deformation of 3Y-TZP, an addition of only 1 wt% amorphous silicate was found to decrease the ow stress by 50% at 1500°C [9].…”

Section: Introductionmentioning

confidence: 99%

Contribution of boundary non-stoichiometry to the lower-temperature plasticity in high-pressure sintered boron carbide

Jiang

et al. 2023

Preprint

View full text Add to dashboard Cite

Non-oxide ceramics exhibit significant advantages in high-tech industry, but their applications have been limited by the brittle nature especially at low to moderate temperatures. It is a great challenge to improve the ceramic plasticity while maintaining the high-temperature strength through the classical strategy, which generally includes decreasing grain size to several nanometers or adding ductile binder phase. Herein, the plasticity of fully dense boron carbide (B4C) has been greatly enhanced due to the boundary non-stoichiometry induced by high-pressure sintering technology. The effect decreased the plastic deformation temperature of B4C by 200°C compared to that of conventionally-sintered specimens. Promoted grain boundary diffusion is found to enhance grain boundary sliding, which dominate the lower-temperature plasticity. In addition, the as-produced specimen maintained extraordinary strength before the occurrence of plasticity. The study provides a new and efficient strategy by boundary chemical change to facilitate the plasticity of ceramic materials.

show abstract

“…5) The effects of additional glass on superplasticity of YTZP have been studied to improve the ductility 6) 11) Yoshizawa et al 6) and Gust et al 7) reported that the addition al silicate glass was present not only at multiple junctions as glass pocket but also at twograin junctions as thin film. However, Ikuhara et al 9) revealed that intergranular glass film did not exist in SiO 2 doped YTZP.…”

Section: Introductionmentioning

confidence: 99%

Effects of Temperature and Chemical Composition of Intergranular Glass on Dihedral Angle of Glass-Doped 3Y-TZP

英司¹,

豊²,

隆³

et al. 2004

J. Ceram. Soc. Japan

View full text Add to dashboard Cite

Fig. 1. Dihedral angle ( q ) in multiple pocket of glasscontaining ceramic (YASdoped 3YTZP). g SS is the grain boundary energy, and g SL is the interface energy between grain and glass. The distribution and the morphology of glass phase in polycrystals are affected by the dihedral angle and the volume fraction of the glass phase. The effects of temperature and chemical composition of intergranular glass on dihedral angle of glassdoped 3mol÷yttriastabilized tetragonal zirconia polycrystals (3YTZP) were studied by transmission electron microscopy (TEM). The intergranular glass was either SiO 2 (melting point of 1700 C) or Y 2 O 3 Al 2 O 3 SiO 2 eutectic glass (YAS glass: melting point of 1350 C). The average dihedral angles of SiO 2 doped and YASdoped 3YTZP, which were sintered at 1300 C, were found to be 70 and 50 , respectively. The dihedral angle in YASdoped 3YTZP decreased to 25after annealing at 1500 C, whereas that in SiO 2 doped 3YTZP remained constant. From the relationship between the dihedral angle and the ratio of grain boundary energy to solid/glass interface energy (g SS /g SL ), it was suggested that g SS /g SL increased at elevated temperatures higher than the melting point of glass.

show abstract

High‐Temperature Tensile Deformation of Glass‐Doped 3Y‐TZP

Cited by 13 publications

References 22 publications

Local Bonding States of Titanium and Germanium-doped Tetragonal Zirconia Polycrystal and Their Correlation to High Temperature Ductility

Local Bonding States of Titanium and Germanium-doped Tetragonal Zirconia Polycrystal and Their Correlation to High Temperature Ductility

Contribution of boundary non-stoichiometry to the lower-temperature plasticity in high-pressure sintered boron carbide

Effects of Temperature and Chemical Composition of Intergranular Glass on Dihedral Angle of Glass-Doped 3Y-TZP

Contact Info

Product

Resources

About