High-temperature thermal expansion study of cadmium stannidiphosphide by an X-ray method

Reddy, N A; Kistaiah, P.; Murthy, K. P. N.

doi:10.1088/0022-3727/15/11/017

Cited by 4 publications

(1 citation statement)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The following five materials satisfied the criteria: CdSnP 2 , ZnSnN 2 , ZnGeAs 2 , CdSiAs 2 , and CdSiSb 2 . The experimental synthesis of CdSiAs 2 , CdSnP 2 , ZnSnN 2 , and ZnGeAs 2 were reported in the literature [33][34][35][36][37][38][39][40]. Here, we note that CdSiAs 2 , CdSnP 2 , and ZnGeAs 2 received less attention, compared to ZnSnN 2 .…”

Section: Resultsmentioning

confidence: 71%

Screening of II-IV-V2 Materials for Photovoltaic Applications Based on Density Functional Theory Calculations

Jeong¹,

Jeong²,

Song³

et al. 2021

Crystals

View full text Add to dashboard Cite

The relative stability of polymorphs and their electronic structure was investigated for II-IV-V2 materials by using first-principles density functional theory calculations. Our calculation results show that, for Zn-, Cd-, and Be-containing compounds, nitrides favor the 2H polymorph with AB stacking sequence; however, phosphides, arsenides, and antimonides are more stable in the 3C polymorph with the ABC stacking sequence. The electronic band gap of materials was calculated by using hybrid density functional theory methods, and then materials with an ideal band gap for photovoltaic applications were chosen. The experimental synthesis of the screened materials is reported, except for CdSiSb2, which was found to be unstable in our calculation. The absorption coefficient of the screened materials, especially ZnGeAs2, was high enough to make thin-film solar cells. The higher stacking fault energy in ZnGeAs2 than the others is consistent with the larger formation energy difference between the 2H and 3C polymorphs.

show abstract

Section: Resultsmentioning

confidence: 71%

Screening of II-IV-V2 Materials for Photovoltaic Applications Based on Density Functional Theory Calculations

Jeong¹,

Jeong²,

Song³

et al. 2021

Crystals

View full text Add to dashboard Cite

show abstract

Low-temperature thermal expansion of ZnSiAs2

Deus

Voland

Neumann

1988

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

on the occasion of his 60th birthdayThe thermal expansion coefficients a, and a, of the lattice parameters a and c of ZnSiAs, are measured in the tempercttnre range from 30 to 300 K using the X-ray Bond method. Both a, and a, decrease with decreasing temperature and become negative at about 45 K. The results are compared with thermal expansion data for other chalcopyrite semiconductors and are discussed in terms of the principal Grdneisen pnrnmeters of these compounds.Die thermischen Ausdehnungskoeffizienten a, und a, der Gitterparnmeter a und c von ZnSiAs, werden im Temperatnrbereich von 30 bis 300 K mit Hilfe der Bond-Methode gemessen. Sowohl a, als such a, fallen niit sinkender Temperatur und werden bei etwa 45 K negativ. Die Ergebnisse werden mit Daten zur thermischen Ausdehnung anderer Chalkopyrithalbleiter verglichen und mit Hilfe der prinzipiellen Grtineisenparameter dieser Verbindungen diskutiert.

show abstract

Temperature dependence of tetragonal distortion in AIIBIVC 2 V chalcopyrite semiconductors

Kistiah

Murthy

1984

J Mater Sci Lett

View full text Add to dashboard Cite

High-temperature thermal expansion study of cadmium stannidiphosphide by an X-ray method

Cited by 4 publications

References 23 publications

Screening of II-IV-V2 Materials for Photovoltaic Applications Based on Density Functional Theory Calculations

Screening of II-IV-V2 Materials for Photovoltaic Applications Based on Density Functional Theory Calculations

Low-temperature thermal expansion of ZnSiAs2

Temperature dependence of tetragonal distortion in AIIBIVC 2 V chalcopyrite semiconductors

Contact Info

Product

Resources

About