High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

Matys, M.; Adamowicz, B.; Żytkiewicz, Z. R.; Taube, Andrzej; Kruszka, R.; Piotrowska, Anna

doi:10.1063/1.4960484

Cited by 5 publications

(4 citation statements)

References 27 publications

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“…However, fast response and fast recovery times of SPV upon light ON and OFF indicate that photo carriers are generated upon illumination, and upon turning off, they quickly recombine with the bulk, markedly showing the potential of the sample as a photodetector. [ 34 ] The extracted ΔCPD versus intensity plot is shown in Figure 2e. Two distinct slopes are observed up to 28 mW cm −2 ; however, the photovoltage slowly attains saturation beyond that intensity.…”

Section: Resultsmentioning

confidence: 99%

Novel Ternary Nitride Thin Film‐Based Self‐Powered, Broad Spectral Responsive Photodetector with a High Detectivity for Weak Light

George

Vikraman

Reji

et al. 2022

Adv Materials Technologies

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with titanium nitride (TiN) as the most common example. [1] Along with their superior mechanical properties, these are good conductors being employed as permanent contact layers and diffusion barriers in microelectronics. [1] In addition, nitrides are well explored as novel piezoelectric and thermoelectric materials, generally in the area of energy harvesting (e.g., aluminium nitride (AlN)). AlN has been well studied in the past 20 years due to its excellent properties, such as wide bandgap, high thermal conductivity, high hardness, and high thermal stability. Its thin film has a high piezoelectric coefficient (d 33 = 5.5 pCN -1 ). [2] There is a plethora of literature available on transition metal nitride in both thin-film and bulk forms for various applications. [1] Among nitrides, the ternary transition metal nitrides (TTMNs), particularly II-IV-N 2, have emerged as a recent attraction in the electronic industry due to their attractive structural and electrical properties and, importantly, the ability to offer tunable properties such as bandgap, etc. [1] The small amount of scandium (Sc)-doping into AlN significantly increased the piezoelectric properties. [2] The most explored prototypes in this category Self-powered, wide-spectral response, fast, and high-sensitivity photo detectors are essential for developing next-generation optoelectronic devices. In this work, the predicted optoelectronic properties of the ternary metal-zinc (Zn)nitride (N) thin films are experimentally demonstrated. A novel phase of the Titanium (Ti)-Zn-N system (dominantly TiZnN 2 film of ≈235 nm thickness) is developed on the p-Si substrate, which shows excellent optoelectronic properties. The Indium Tin Oxide (ITO)/TiZnN 2 /p-type Si (p-Si) photodetector of area ≈4 mm 2 exhibits an impressive responsivity of 1.22 × 10 -4 A W −1 at 0 V and 40 mA W −1 at −4 V, a specific detectivity up to 1.16 × 10 9 Jones at 0 V, and a response speed of 1.9 ms at zero external bias (i.e., self-powered mode). Benefiting from the broad-band absorption of the film and p-Si combination, the detection range is observed from the ultraviolet to near-infrared (300-1150 nm). Simultaneous operation of self-powered photo-triggered drip irrigation ON and street light OFF in the early morning and vice-versa in the evening is demonstrated for autonomous farming. The device is insensitive to humidity and ambiance, and generates a photocurrent with light intensity as low as 5 mW cm −2 . The active layer is hydrophobic and highly stable, and the fabrication is cost-effective.

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Section: Resultsmentioning

confidence: 99%

Novel Ternary Nitride Thin Film‐Based Self‐Powered, Broad Spectral Responsive Photodetector with a High Detectivity for Weak Light

George

Vikraman

Reji

et al. 2022

Adv Materials Technologies

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“…We did not take into account the bulk charge in SiO 2 because we showed recently 15 from the photo-assisted C-V measurements that this charge can be negligible in the case of the investigated structures. In addition, based on our recent studies of the surface photovoltage effect, 20 we also neglected the bulk charge in SiN. It was possible because in the case of the SiN/GaN structure, we observed a very fast recovery time of the surface photovoltage after turn-off of the ultraviolet light, which indicated the lack of the charge trapping effects in the SiN bulk.…”

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confidence: 99%

Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Matys

Stoklas

Blaho

et al. 2017

Applied Physics Letters

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The key feature for the precise tuning of Vth in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge (Qpol−). In order to clarify the origin of Qf, we carried out a comprehensive capacitance-voltage (C-V) characterization of SiO2/AlxGa1–xN/GaN and SiN/AlxGa1–xN/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both types of structures, we observed a significant Vth shift in C-V curves towards the positive gate voltage with increasing x. On the contrary, the Schottky gate structures exhibited Vth shift towards the more negative biases. From the numerical simulations of C-V curves using the Poisson's equation supported by the analytical calculations of Vth, we showed that the Vth shift in the examined MIS structures is due to a significant decrease in the positive Qf with rising x. Finally, we examined this result with respect to various hypotheses developed in the literature to explain the origin of the positive Qf at insulator/III-N interfaces.

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“…Due to spontaneous polarization and piezoelectric polarization effect [27], opposite polarized electric fields are distributed sequentially in the layers of the p-GaN/AlGaN/GaN heterojunction. Under external UV illumination, as shown in figure 4(b), electron-hole pairs are produced in the device and then separated by the built-in electric fields [28,29]. The accumulated carriers form an equivalent photogenerated electric field in each layer of the heterostructure, causing the change of the barrier height and the 2DEG density due to the photovoltaic effect.…”

Section: Resultsmentioning

confidence: 99%

Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics

Chen

Zhang

Wang

et al. 2023

Semicond. Sci. Technol.

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We report ultraviolet phototransistors (UVPTs) based on p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs). Thanks to the effective depletion of the two-dimensional electron gas by the p-GaN layer, a dark current as low as 5.2×10-10 A/mm was achieved. Moreover, a unique sub-saturated region can be formed in the transfer curve of the UVPTs due to the special photogenerated electric field in the heterostructure, which endows the device with a large photo-to-dark current ratio over 105. In particular, responsivity up to 1.3×108 and 6.1×103 A/W was demonstrated at gate voltage of 5 and 0.68 V, respectively. The minimum rise time and fall time of the device transient response were measured to be around 1.8 ms and 8.8 ms, respectively. This work shows great UV detection potential of the p-GaN/AlGaN/GaN HEMTs, which opens up possibilities of realizing multifunctional enhancement HEMTs for future III-V photonic integrated devices and systems.

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High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

Cited by 5 publications

References 27 publications

Novel Ternary Nitride Thin Film‐Based Self‐Powered, Broad Spectral Responsive Photodetector with a High Detectivity for Weak Light

Novel Ternary Nitride Thin Film‐Based Self‐Powered, Broad Spectral Responsive Photodetector with a High Detectivity for Weak Light

Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics

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