High-Temperature XRD and DTA Studies of BiMnO3Perovskite

MultiferroicBiFeO3-BiMnO3nanoscale checkerboard from first principles

“…Their values are comparable to those obtained from the observed bulk transition temperatures within mean field theory assuming a single J: J F e,bulk ≈ 6.3meV and J Mn,bulk ≈ −1.5meV , respectively [65][66][67][68][69][70] . The correspondence is not exact because of the difference in the bond geometry between bulk BiFeO 3 and bulk BiMnO 3 and the nanocheckerboard.…”

Structural stability of multiferroics BiMnO3 under high pressure

“…Magnetoelectric multiferroics, sometimes termed as ferroelectromagnet, exhibiting ferroelectricity and ferromagnetism simultaneously, i.e., being both magnetically and electrically polarized, has stimulated a great deal of research interest during the very recent years [2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Apart from the tremendous application perspective based on the mutual control of polarization and magnetization via magnetoelectric effect, i.e., the induction of electric polarization by means of magnetic field or vice versa, the fundamental physics behind is fascinating.…”

“…Multiferroism (or ferroelectromagnetism) with ferroelectric Curie temperature T E at 773 K and ferromagnetic Curie temperature T M at 105 K in BiMnO 3 has been widely recognized. So far, investigation on structural feature of BiMnO 3 has been focused on temperature dependence only [13]. Structural evolution of BiMnO 3 when subjected to external pressure still remains open question.…”

The preparation, and structural and multiferroic properties of B-site ordered double-perovskite Bi2FeMnO6

“…Moreover, BMO is metastable, which makes its fabrication very difficult. Previous studies have pointed out that the bulk phases of BMO have to be synthesized by the high-pressure method [7] and the growth of pure phase BMO epitaxial films can only be achieved by strain engineering [6,8,9]. These drawbacks of BFO and BMO materials inevitably limit their practical applications on spintronic devices, especially in RT environment.…”