High Temporal Resolution Measurements of Shrinkage Characteristics of UV Nanoimprint Rresin

Wang, Qing; Hiroshima, Hiroshi

doi:10.2494/photopolymer.24.95

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Cited by 4 publications

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“…18,19) Hiroshima and co-workers reported CD errors of approximately 12% in UV nanoimprint lithography. [20][21][22][23] For semiconductor applications, dimensional estimations are indispensable for the precisive pattern transfer process. Several simulation studies have been reported for resist deformation in the nanoimprint lithography process.…”

Section: Introductionmentioning

confidence: 99%

Impact of Resist Shrinkage and Its Correction in Nanoimprint Lithography

Horiba

Yasuda

Kawata

et al. 2012

Jpn. J. Appl. Phys.

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Section: Introductionmentioning

confidence: 99%

Impact of Resist Shrinkage and Its Correction in Nanoimprint Lithography

Horiba

Yasuda

Kawata

et al. 2012

Jpn. J. Appl. Phys.

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Simultaneous measurement of depth-resolved refractive index field and deformation field inside polymers during the curing process

Huang

Lin²,

Bai³

et al. 2022

Measurement

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Impact of resist shrinkage on the template release process in nanoimprint lithography

Tochino

Shiotsu

Uemura

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Template release in nanoimprint lithography was computationally studied. The impact of resist shrinkage on template release load is described. The resist shrinkage affects the state of the boundary status between resist and template, and is a factor that influences whether the resist adheres to or separates from the template. When the resist fully adheres to the template, the release load increases due to residual stress as the residual layer becomes thinner. This is because compressive stress at the residual layer is induced by resist shrinkage in the pattern cavity. In addition, the release load increases when the resist partially adheres to the template, a consequence of the decrease in interfacial area. This is because the decrement of interface area due to concentration of stress.

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High Temporal Resolution Measurements of Shrinkage Characteristics of UV Nanoimprint Rresin

Cited by 4 publications

References 16 publications

Impact of Resist Shrinkage and Its Correction in Nanoimprint Lithography

Impact of Resist Shrinkage and Its Correction in Nanoimprint Lithography

Simultaneous measurement of depth-resolved refractive index field and deformation field inside polymers during the curing process

Impact of resist shrinkage on the template release process in nanoimprint lithography

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