High thermal conductivity aluminum nitride ceramic substrates and packages

Miyashiro, Fumio; Iwase, Nobuo; Tsuge, Akihiko; Ueno, Fumio; Nakahashi, Masako; Takahashi, Takashi

doi:10.1109/33.56163

Cited by 102 publications

(40 citation statements)

References 2 publications

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“…The thermal shock resistance of aluminium nitride is even higher than that of beryllia due to its lower coefficient of thermal expansion, closely matched to that of silicon. AlN is an attractive, non-toxic alternative to BeO for high power electronic substrates, packages and heat spreaders, where thermal management is a significant design issue [26][27][28][29][30][31][32][33][34]. Other applications of AlN include its use for boats and crucibles for the production of high purity GaAs for semiconductor applications [35], and AlN has also been considered for use as a ballistic armor material [36].…”

Section: Aluminium Nitridementioning

confidence: 99%

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A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics

et al. 2011

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The current review uses the material requirements of a new space propulsion device, the Variable Specific Impulse Magnetoplasma Rocket (VASIMR ® ) as a basis for presenting the temperature dependent properties of a range of dielectric ceramics, but data presented could be used in the engineering design of any ceramic component with complementary material requirements. A material is required for the gas containment tube (GCT) of VASIMR ® to allow it to operate at higher power levels. The GCT's operating conditions place severe constraints on the choice of material. A dielectric is required with a high thermal conductivity, low dielectric loss factor, and high thermal shock resistance. There is a lack of a representative set of temperature-dependent material property data for materials considered for this application and these are required for accurate thermo-structural modelling. This modelling would facilitate the selection of an optimum material for this component. The goal of this paper is to determine the best material property data values for use in the materials selection and design of such components. A review of both experimentally and theoretically-determined temperature-dependent & room temperature properties of several materials has been undertaken. Data extracted are presented by property. Properties reviewed are density, Young's, bulk and shear moduli, Poisson's ratio, tensile, flexural and compressive strength, thermal conductivity, specific heat capacity, thermal expansion coefficient and the factors affecting maximum service temperature. Materials reviewed are alumina, aluminium nitride, beryllia, fused quartz, sialon and silicon nitride.

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Section: Aluminium Nitridementioning

confidence: 99%

“…as measured in [98]). However, low-porosity sintered or hot pressed AlN with additions of high molecular mass sintering aids such as Y 2 O 3 have bulk densities higher than this, with bulk density typically increasing with increasing sintering aid addition [28]. By analysing the data, the density of fully dense AlN may be approximated by:…”

Section: Densitymentioning

confidence: 99%

A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics

et al. 2011

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“…Enhanced densification of AlN is achieved via reaction of the inherent surface oxide on AlN powders with select sintering additives, typically alkaline earth or rare earth oxides, carbides or fluorides [3,[10][11][12][13][14][15]. These sintering additives not only promote densification via formation of intermediate liquid phases, but they can also enhance the thermal conductivity of AlN.…”

Section: Means Of Achieving Thermal Conductivity In Ceramicsmentioning

confidence: 99%

Thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics

Júnior

Shanafield

2004

Cerâmica

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In general, polycrystalline ceramics exhibit lower thermal conductivities than their associated single crystals. For instance, at 300K, the theoretical thermal conductivity of single crystal aluminum nitride (AlN) is 319 W/m-K, whereas, the values measured for polycrystalline AlN ceramics range from 17 W/m-K to 285 W/m-K. This variation is not unusual for polycrystalline ceramics. The variability is strongly dependent upon the purity of the starting materials and the details of sintering process. The process is important since it influences the microstructure and thus influences the conduction mechanism. In this paper we present the causes of this variation and how it can be controlled.

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“…The equivalent CTE of the DBC structure is 7.2 ppm/K [10][11][12], which has been confirmed to perform better during high temperature storage (HTS) test and thermal cycling (TC) test [6,9]. So far, DBC substrates have been widely used in high power modules installed in electric vehicles (EV), hybrid cars and aerospace power management units [13,14]. However, bonding medium such as high temperature solder or nanoAg paste is still needed to bond active chips to DBC, which inevitably increases the heat dissipation path.…”

mentioning

confidence: 95%

“…However, bonding medium such as high temperature solder or nanoAg paste is still needed to bond active chips to DBC, which inevitably increases the heat dissipation path. In addition, the ceramic within the DBC substrates (Al2O3 or AlN) has relatively lower thermal conductivity compared to Cu or other metals [14]. Therefore, there is still room for improvement in terms of bonding structure design.…”

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confidence: 99%

Solid-state bonding of silicon chips to copper substrates with graded circular micro-trenches

Lee

2018

J Mater Sci: Mater Electron

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Silicon (Si) chips of 5 mm × 5 mm were bonded directly to copper (Cu) substrates using solid-state process at 300 °C without using any die-attach materials. A static pressure of 6.9 MPa was applied. To deal with the large mismatch in coefficient of thermal expansion (CTE) between Si and Cu, graded circular micro-trenches were fabricated on the Cu substrates. The micro-trenches provide space for Cu material to move into during the bonding process where the Cu surface incurs plastic deformation to conform to Si bottom surface for intimate contact. The micro-trenches also help relax stresses on the bonding interface caused by the fact that Cu contracts significantly more than Si during cooling down. The results obtained are encouraging, implying that the concept of using micro-trenches work. Scanning electron microscopy (SEM) images on cross sections of bonded structures show that Si chips were well bonded to Cu substrates without voids or defects on the interface and without any cracks on Si chip. Shear test were performed on six samples. It turned out that, of all six samples, the Si chip fractured first and the entire Si bottom surface was stilled well bonded to the Cu substrate. The average breakage force of Si chips on six samples is 13.5 Kgf. The breakage force of the joint cannot be determined but is certainly higher than 13.5 Kgf, which is more than twice of the specification American Military Standard. The new chip bonding structure with solid-state process reported in this paper eliminates the use of die-attach materials and the thermal resistance associated with the dieattach. It also removes the operating temperature limit constrained by the melting temperature of die-attach materials. We except this new bonding structure design to be a valuable alternative to high power and high temperature devices.

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High thermal conductivity aluminum nitride ceramic substrates and packages

Cited by 102 publications

References 2 publications

A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics

A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics

Thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics

Solid-state bonding of silicon chips to copper substrates with graded circular micro-trenches

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