High Thermoelectric Figure of Merit and Nanostructuring in Bulk p‐type Na1−xPbmSbyTem+2

Poudeu, Pierre F. P.; D’Angelo, Jonathan; Downey, Adam; Short, Jarrod; Hogan, Timothy P.; Kanatzidis, Mercouri G.

doi:10.1002/anie.200600865

Cited by 367 publications

(260 citation statements)

References 29 publications

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“…Many studies have been carried out on the LAST system by Kanatzidis's group, particularly with respect to microstructure characterization [66] and exploration of p-type LAST systems [67][68][69]. Th ey have found that a high ZT value of 1.45 at 630 K is achievable in p-type Ag(Pb 1-x Sn x ) m SbTe 2+m by partially substituting the lead in the LAST system with tin [67].…”

Section: Cosb 3 -Based Skutteruditesmentioning

confidence: 99%

“…Th ey have found that a high ZT value of 1.45 at 630 K is achievable in p-type Ag(Pb 1-x Sn x ) m SbTe 2+m by partially substituting the lead in the LAST system with tin [67]. Subsequent research has shown that simply replacing silver in the LAST system with sodium leads to a higher ZT of 1.7 at 650 K in p-type Na 0.95 Pb 20 SbTe 22 [68]. More recently, potassium-based analogues of p-type K 1-x Pb m Sb y Te m+2 materials have been reported.…”

Section: Cosb 3 -Based Skutteruditesmentioning

confidence: 99%

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High-performance nanostructured thermoelectric materials

et al. 2010

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T he conversion of thermal energy to electrical energy is known as thermoelectric (TE) conversion. Th e TE eff ect can be used for both power generation and electronic refrigeration. When a temperature gradient (ΔT ) is applied to a TE couple consisting of n-type (electron-transporting) and p-type (hole-transporting) elements, the mobile charge carriers at the hot end tend to diff use to the cold end, producing an electrostatic potential (ΔV ). Th is characteristic, known as the Seebeck eff ect, where α = ΔV/ΔT is defi ned as the Seebeck coeffi cient, is the basis of TE power generation, as shown in Figure 1(a). Conversely, when a voltage is applied to a TE couple, the carriers attempt to return to the electron equilibrium that existed before the current was applied by absorbing energy at one connector and releasing it at the other, an eff ect known as the Peltier eff ect, as shown in Figure 1(b). Th ermoelectric technology and solid-state devices based on the TE eff ect have a number of advantages, including having no moving parts, and being reliable and scalable. Th e technology has therefore arouse worldwide interest in many fi elds, including waste heat recovery and solar heat utilization (power generation mode), and temperature-controlled seats, portable picnic coolers and thermal management in microprocessors (active refrigeration mode) [1].Th e effi ciency of TE devices is strongly associated with the dimensionless fi gure of merit (ZT) of TE materials, defi ned as ZT = (α 2 σ/κ)T, where σ, κ and T are the electrical resistivity, thermal conductivity and absolute temperature [2]. High electrical conductivity (corresponding to low Joule heating), a large Seebeck coeffi cient (corresponding to large potential diff erence) and low thermal conductivity (corresponding to a large temperature diff erence) are therefore necessary in order to realize high-performance TE materials. Th e ZT fi gure is also a very convenient indictor for evaluating the potential effi ciency of TE devices. In general, good TE materials have a ZT value of close to unity. However, ZT values of up to three are considered to be essential for TE energy converters that can compete on effi ciency with mechanical power generation and active refrigeration.High-performance TE materials have been pursued since Bi 2 Te 3 -based alloys were discovered in the 1960s. Until the end of last century, moderate progress had been made in the development of TE materials. Th e benchmark of ZT ≈ 1 was broken in the mid-1990s by two Tsinghua University, China Thermoelectric eff ects enable direct conversion between thermal and electrical energy and provide an alternative route for power generation and refrigeration. Over the past ten years, the exploration of high-performance thermoelectric materials has attracted great attention from both an academic research perspective and with a view to industrial applications. This review summarizes the progress that has been made in recent years in developing thermoelectric materials with a high dimensionless fi gure of...

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Section: Cosb 3 -Based Skutteruditesmentioning

confidence: 99%

Section: Cosb 3 -Based Skutteruditesmentioning

confidence: 99%

High-performance nanostructured thermoelectric materials

et al. 2010

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“…Among several kinds of TE materials, PbTe has demonstrated a relatively high zT value (zT  1) at mid-temperature ranges and is one of the most studied material [11] with an array of alloying materials and strategies to optimize its carrier concentration [12,13], manipulate its band structure [14][15][16][17][18][19] and to achieve nanostructuring [6,[20][21][22][23][24][25][26]. Our investigation of the thermoelectric properties of Pb0.98-xSbxTe system was motivated by a past study on the n-type self-deficit Pb0.96Sb0.02Te1-xSex bulk materials, where a strong reduction of latt and an enhanced zT was reported [27].…”

Section: Introductionmentioning

confidence: 99%

Enhancement in thermoelectric performance of n-type Pb-deficit Pb-Sb-Te alloys

Srinivasan

Gucci

Boussard‐Plédel

et al. 2017

Journal of Alloys and Compounds

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PbTe based materials are well known for their high performance thermoelectric properties. Here, a systematic study of thermoelectric transport properties of n-type Pb-deficit Pb0.98-xSbxTe alloys with carrier concentrations in the range of 10 -19 cm -3 is presented from room temperature to 623 K. A maximum thermoelectric figure of merit (zT) of 0.81 was achieved at 623 K for 4 mol% Sb containing Pb-deficit composition, by the cumulative integration of enhanced power factor and significant reduction in thermal conductivity. The scattering of phonons at Pb vacancies, contributed to the reduction of lattice thermal conductivity, and thereby strikingly boosted the zT of the Pb-deficit samples when compared with the pristine Pb1-xSbxTe.

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“…, PbTe:Tl (~1.5) 4,6 , NaPb m SbTe 2+m (~1.7) 13 , and n-type AgPb m SbTe 2+m (~1.7) 14 and PbTePbS:PbI 2 (~1.5) 15 . All these materials are based on Te.…”

mentioning

confidence: 99%

Enhancement of thermoelectric figure-of-merit by resonant states of aluminium doping in lead selenide

Zhang

Wang

Liu

et al. 2012

Energy Environ. Sci.

408

252

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By adding aluminium (Al) into lead selenide (PbSe), we successfully prepared n-type PbSe thermoelectric materials with a figure-of-merit (ZT) of 1.3 at 850 K. Such high ZT is achieved by a combination of high Seebeck coefficient caused by very possibly the resonant states in the conduction band created by Al dopant and low thermal conductivity from nanosized phonon scattering centers. Broader contextThermoelectric devices directly convert heat to electricity, thus they are important for harvesting natural heat as well as waste heat. For efficient devices, high figure-of-merit (ZT) materials are desired. We report here n-type lead selenide (PbSe) thermoelectric materials with ZT of 1.3 at 850 K. These materials are prepared by adding aluminium (Al) in PbSe during ball milling and hot pressing. Al, as a dopant in PbSe, possibly creates resonant states in the conduction band and causes increase in the local density of states (DOS) near the Fermi level. As a result, the Seebeck coefficients of Al added PbSe samples are about 40~100% higher than the predicted values by the simple parabolic band model and about 40% higher than the Cl-doped reference PbSe sample without resonant states. Furthermore, using ball milling and hot pressing technique, the structure of our samples contains features such as Pb depleted discs, small grains, and ~10 nm subgrains that are effective for phonon scattering, and result in a much lower lattice thermal conductivity of 0.6~0.7 Wm

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High Thermoelectric Figure of Merit and Nanostructuring in Bulk p‐type Na_1−xPb_mSb_yTe_m+2

Cited by 367 publications

References 29 publications

High-performance nanostructured thermoelectric materials

High-performance nanostructured thermoelectric materials

Enhancement in thermoelectric performance of n-type Pb-deficit Pb-Sb-Te alloys

Enhancement of thermoelectric figure-of-merit by resonant states of aluminium doping in lead selenide

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