2002
DOI: 10.1016/s1386-9477(02)00246-1
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High thermoelectric figure of merit ZT in PbTe and Bi2Te3-based superlattices by a reduction of the thermal conductivity

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Cited by 96 publications
(59 citation statements)
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“…Furthermore L ⊥ is larger than the metallic limit L 0 . Very often values of L ⊥ ∼ 0.5 − 0.6 [12,30] are assumed for the experimental determination of κ el,⊥ in Bi 2 Te 3 /Sb 2 Te 3 SLs. In turn, this most probably leads to an underestimation of the electrical contribution to total thermal conductivity in cross-plane direction.…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore L ⊥ is larger than the metallic limit L 0 . Very often values of L ⊥ ∼ 0.5 − 0.6 [12,30] are assumed for the experimental determination of κ el,⊥ in Bi 2 Te 3 /Sb 2 Te 3 SLs. In turn, this most probably leads to an underestimation of the electrical contribution to total thermal conductivity in cross-plane direction.…”
Section: Resultsmentioning
confidence: 99%
“…It suggests that cross-plane transport along the direction perpendicular to the artificial interfaces of the SL reduces phonon heat conduction while maintaining or even enhancing the electron transport 3 . While some effort in experimental research was done [8][9][10][11][12][13] , only a few theoretical works discuss the possible transport across such SL structures 14,15 . While Park et al 14 discussed the effect of volume change on the in-plane thermoelectric transport properties of Bi 2 Te 3 , Sb 2 Te 3 and their related compound, Li et al 15 focussed on the calculation of the electronic structure for a Bi 2 Te 3 /Sb 2 Te 3 -SL, stating changes of the mobility anisotropy estimated from effective masses.…”
Section: Introductionmentioning
confidence: 99%
“…Lead telluride is a narrow gap semiconductor that finds applications in thermoelectric devices [1][2][3] and in infrared lasers 4,5 and detectors. 6,7 The molecular beam epitaxial ͑MBE͒ technique has been successfully applied to grow high-quality thin films and heterostructures of PbTe-based alloys.…”
Section: Introductionmentioning
confidence: 99%
“…6,7 The molecular beam epitaxial ͑MBE͒ technique has been successfully applied to grow high-quality thin films and heterostructures of PbTe-based alloys. [8][9][10] Highly doped layers ͑Ͼ10 19 cm −3 ͒ are required to increase the impedance-temperature ͑ZT͒ figure of merit in thermoelectric devices 3 and to minimize electrical losses in lasers. 4 In addition, the doping control to produce a wide range of free carrier densities is very interesting for optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%