2017
DOI: 10.1039/c7ta02643a
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High thermoelectric performance due to nano-inclusions and randomly distributed interface potentials in N-type (PbTe0.93−xSe0.07Clx)0.93(PbS)0.07composites

Abstract: The nano-inclusion in a matrix effectively scatters phonons and the band bending effect at the interfaces can selectively scatter carriers, resulting in the enhancement of thermoelectric performance.

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Cited by 26 publications
(28 citation statements)
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“…Energies 2020, 13, 72 4 of 29 The lattice parameters of PbTe, PbSe, and PbS are 3.22, 3.07, and 2.965 Å , respectively, along the (200) plane [31,32]. Numerous nanoprecipitates are also found in K-doped (Pb0.98K0.02Te)0.7(PbSe)0.25(PbS)0.05 [7] and Cl-doped (PbTe0.93−xSe0.07Clx)0.93(PbS)0.07 ( = 0.0005) [11], which are synthesized by same process with (PbTe)0. 75 Figures 3d and 4f, respectively.…”
Section: Figures 2a and 2bmentioning
confidence: 96%
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“…Energies 2020, 13, 72 4 of 29 The lattice parameters of PbTe, PbSe, and PbS are 3.22, 3.07, and 2.965 Å , respectively, along the (200) plane [31,32]. Numerous nanoprecipitates are also found in K-doped (Pb0.98K0.02Te)0.7(PbSe)0.25(PbS)0.05 [7] and Cl-doped (PbTe0.93−xSe0.07Clx)0.93(PbS)0.07 ( = 0.0005) [11], which are synthesized by same process with (PbTe)0. 75 Figures 3d and 4f, respectively.…”
Section: Figures 2a and 2bmentioning
confidence: 96%
“…low Cl-doping level ( = 0.0005), which is a very high value in n-type thermoelectric materials. The randomly distributed interface potential induced by Fermi level tuning with nanoinclusions is a new technique for investigating thermoelectric properties [11]. The nanoprecipitates (Figure 4) show a strong lattice strain near precipitates in (PbTe0.93−xSe0.07Clx)0.93(PbS)0.07 alloys from TEM images, and their electron diffraction and strain field map from IFFT mapping of TEM are also shown.…”
Section: High Thermoelectric Performance Due To Nanoinclusions and Ramentioning
confidence: 99%
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“…A diversity of approaches have been applied to PbTe-based materials for ZT enhancements, such as carrier concentration optimization [16,17], introduction of resonance level [18,19], electronic band engineering [6,20,21] and microstructure engineering [8,22]. Recent researches also highlight lattice dislocations as an effective phonon scattering source to further suppress the lattice thermal conductivity of lead chalcogenides [23][24][25][26].…”
Section: Introductionmentioning
confidence: 99%