5149wileyonlinelibrary.com the Seebeck coeffi cient is related to the electrical conductivity according to the Boltzmann transport equations, [ 3 ] hence, it will be hard to optimize one without degrading the other. Many approaches have been developed in the recent years to enhance the thermoelectric power factor ( S 2 / ρ ) including modifying the band structure by electronic resonant states, [ 4 ] quantum confi nement effects, [ 5 ] band convergence, [ 6 ] energy barrier fi ltering, [ 7,8 ] and intensifying impurity scattering of the carriers [ 9 ] to enhance the Seebeck coefficient. Among these, the carrier impurity scattering effect on the Seebeck coeffi cient has been recently investigated in Skutterudite [ 9 ] after it had nearly been ignored during the past half century. The carrier scattering probability by ionized impurity is inversely proportional to ε 3/2 and ν 3 , where ε is the energy of the carriers and ν is the drift velocity. [ 10 ] Therefore the low energy carriers are more scattered than the high energy ones leading to a positive energy dependence of the scattering time, which can in turn enhance the Seebeck coeffi cient. On the other hand, it is worthy to point out that strong ionized impurity scattering will signifi cantly reduce the carrier mobility which thus leads to a deterioration of the electrical conductivity. [ 11 ] Hence, the key point to use carrier ionized impurity scattering for improving the thermoelectric performances is to fi nd an effective strong ionized impurity scattering center, which could simultaneously enable to tune the concentration of carriers in order to reduce the degradation of the electrical conductivity due to much lower mobility. Typically, the lattice of the ionized impurity scattering center should match well with the matrix, which could minimize the detrimental effects on electrical transport properties.Recently, AgSnSe 2 with rock salt crystal structure, which is identical to PbSe, has attracted much attention as a natural valence-skipping (the Sn ions separated into 1:1 mixture of Sn 2+ and Sn 4+ ) 3D superconductor with quantum phase fl uctuations. [ 12,13 ] In the normal state, the electrical resistivity of AgSnSe 2 is around 0.23 mΩ⋅cm at room temperature (RT) which originate from high carrier concentration of 2.0 × 10 22 cm −3 . Besides, the mean-free path of the carriers in AgSnSe 2 with strong disorder is around 0.9 nm, which is very short, implying the existence of intrinsically strong electron scattering possibly due to the valence fl uctuations of Sn. [ 13 ] On the other hand, rocksalt-structured PbSe was considered as an alternative for its analogue PbTe due to the lower cost of This study reports on the successful synthesis and on the properties of polycrystalline AgPb m SnSe 2+ m ( m = ∞ , 100, 50, 25) samples with a rock salt structure. Between ≈160 and ≈400 K, the dominant scattering process of the carriers in this system changes from acoustic phonon scattering in PbSe to ionized impurity scattering in AgPb m SnSe 2+ m , which synergistica...