High-thermoelectric performance of TiO 2-x fabricated under high pressure at high temperatures

Liu, Haiqiang; Ma, Hongan; Su, Taichao; Zhang, Yuewen; Sun, Bing; Liu, Binwu; Kong, Lingjiao; Li, Baomin; Jia, Xiaopeng

doi:10.1016/j.jmat.2017.06.002

Cited by 35 publications

(19 citation statements)

References 37 publications

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“…High-pressure effects on the thermoelectric parameters of many other families of potential thermoelectric materials have also been considered in the literature. For example, among oxide materials that may be of interest for their thermoelectric properties, some attention has been paid to rutile, TiO 2−x , 148,149 and BiCuSeO. 150,151 It was found that non-stoichiometric samples of rutile (TiO 1.8 ) prepared under HP-HT conditions attain a relatively high ZT ∼ 0.35 at 700°C for a synthesis pressure of 5 GPa.…”

Section: Non-chalcogenide Thermoelectric Materialsmentioning

confidence: 99%

“…150,151 It was found that non-stoichiometric samples of rutile (TiO 1.8 ) prepared under HP-HT conditions attain a relatively high ZT ∼ 0.35 at 700°C for a synthesis pressure of 5 GPa. 148,149 For BiCuSeO adopting a ZrCuSiAs-type structure (P4/nmm space group), a pressure-driven enhancement of the power factor at 700 K was predicted. 150 Later, it was experimentally shown that HP-HT synthesis at 3 GPa significantly improves the figure of merit of BiCuSeO, which reaches ZT ∼ 0.4 at 800 K. 151 For the halide thermoelectric BiTeI, a non-monotonic pressure dependence of the bandgap was predicted, 152 and it was proposed that its power factor may be enhanced many fold at room temperature under appropriate combinations of initial charge carrier concentration and applied pressure.…”

Section: Non-chalcogenide Thermoelectric Materialsmentioning

confidence: 99%

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Strategies and challenges of high-pressure methods applied to thermoelectric materials

Morozova

Korobeinikov

Ovsyannikov

2019

Journal of Applied Physics

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We describe the current state of experimental studies of the effects of applied high pressure or stress on the thermoelectric properties and performance parameters of thermoelectric materials, as well as the challenges faced in this area and possible directions for future work. We summarize and analyze literature data on the effects of high pressure on the Seebeck coefficient (thermoelectric power) of different materials that are related to common families of thermoelectrics, such as Bi

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Section: Non-chalcogenide Thermoelectric Materialsmentioning

confidence: 99%

Section: Non-chalcogenide Thermoelectric Materialsmentioning

confidence: 99%

Strategies and challenges of high-pressure methods applied to thermoelectric materials

Morozova

Korobeinikov

Ovsyannikov

2019

Journal of Applied Physics

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“…The highest power factor value was 449 μW m −1 K −2 at 623 K for the 10 nm ZnO/GZO thin film, which is a competitive value among current GZO thin films 6,7,29,30 . Furthermore, compared with other n‐type oxygen‐containing TE systems at the same measurement temperature, such as Bi 2 O 2 Se, 31 In 2 O 3 , 32 TiO 2 , 33 and CaMnO 3 , 34 the TE performance achieved in this study is also superior, as shown in Figure 6B.…”

Section: Resultsmentioning

confidence: 86%

“…The highest power factor value was 449 μW m −1 K −2 at 623 K for the 10 nm ZnO/GZO thin film, which is a competitive value among current GZO thin films. 6,7,29,30 Furthermore, compared with other n-type oxygen-containing TE systems at the same measurement temperature, such as Bi 2 O 2 Se, 31 In 2 O 3 , 32 TiO 2 , 33 and CaMnO 3 , 34 the TE performance achieved in this study is also superior, as shown in Figure 6B. In this study, we successfully inserted a ZnO interlayer for GZO thin films grown on a c-sapphire substrate and investigated the effects of the ZnO layer on the TE properties of GZO thin films.…”

Section: Characterizationmentioning

confidence: 99%

“…Various electrical properties of GZO thin films Temperature-dependent power factor values of the unbuffered GZO film and ZnO/GZO thin films; (B) comparison of the power factor values of this study and other n-type oxygen-containing thermoelectric materials from references [31][32][33][34]. The error bars are ±10% [Color figure can be viewed at wileyonlinelibrary.com]…”

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confidence: 99%

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High thermoelectric performance of high‐mobility Ga‐doped ZnO films via homogenous interface design

Zhou

Zou

et al. 2021

J. Am. Ceram. Soc.

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Ga-doped ZnO (GZO) thin films grown on sapphire substrates have been widely investigated as a promising transparent thermoelectric (TE) material. However, due to the large lattice mismatch and thermal expansion between the sapphire substrate and GZO film, strain-induced lattice distortion impedes the transport of electrons, leading to low carrier mobility. In this study, ZnO homo-buffer layers with different thicknesses were inserted between sapphire substrates and GZO films, and their effect on the TE properties was investigated. A thin ZnO interlayer (10 nm) effectively reduced the lattice mismatch of the GZO film and improved the carrier mobility, which contributed to the large enhancement in the electrical conductivity. Simultaneously, energy filtering occurred at the interface between GZO and ZnO, resulting in a relatively high density of states (DOS) effective mass and maintaining a high Seebeck coefficient compared to that of the unbuffered GZO films. Consequently, the GZO film with a 10 nm thick ZnO buffer layer possessed a high power factor value of 449 μW m −1 K −2 at 623 K. This study provides a facile and effective method for optimizing the TE performance of oxide thin films by synergistically improving their carrier mobility and enhancing their effective mass.

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Theoretical Insights into Enhanced Photothermal Efficiency in Titanium Oxynitride

Phan,

Bui Dang,

Dung

et al. 2024

Physica Rapid Research Ltrs

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A comprehensive theoretical framework integrating density functional theory (DFT) and finite‐difference time‐domain (FDTD) simulations to investigate absorption and photothermal properties of titanium oxynitride (TiON) is presented. DFT‐calculated dielectric data combined with theoretical estimations of effective thermal properties and mass density are used to predict absorption spectra and light‐induced temperature rise in TiON metamaterials and slabs. It is shown that a two‐layer nanoring metamaterial with moderate oxygen doping achieves over 95% absorption across the 550–1500 nm range due to the interplay between localized surface plasmon resonance and intrinsic TiON losses. This leads to enhanced photothermal heating effects in the TiON metamaterials compared to the TiON slab. The findings reveal that there exists an optimal oxygen doping level in TiON, where the photothermal efficiency is maximized due to a balance between enhanced absorption and reduced thermal conductivity. These results are consistent with prior works and provide insights into tailoring TiON for diverse solar energy applications.

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High-thermoelectric performance of TiO 2-x fabricated under high pressure at high temperatures

Cited by 35 publications

References 37 publications

Strategies and challenges of high-pressure methods applied to thermoelectric materials

Strategies and challenges of high-pressure methods applied to thermoelectric materials

High thermoelectric performance of high‐mobility Ga‐doped ZnO films via homogenous interface design

Theoretical Insights into Enhanced Photothermal Efficiency in Titanium Oxynitride

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