High Thermoelectric Properties of n-Type AgBiSe<sub>2</sub>

Pan, Lin; Bérardan, David; Dragoe, Nita

doi:10.1021/ja312474n

Cited by 144 publications

(116 citation statements)

References 19 publications

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“…A combination of a strong tendency to form covalent interactions for one substructure (herein the tellurium substructure) and a coordination of this characteristic feature by a second substructure (mobile ions) has been identified as the driving force and origin for this effect. This feature has been observed with Ag 10 Te 4 Br 3 for first time and was later substantiated for Ag 5 Te 2 Cl and p‐ and n‐doped AgBiSe 2 4,5…”

Section: Introductionsupporting

confidence: 62%

Irreversible Oxy‐2‐azonia‐Cope Rearrangements for the Synthesis of Functionalized Allyl α‐Amino Acid Derivatives

Zhou

Zou

et al. 2014

Eur J Org Chem

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A general method to synthesize functionalized allyl α‐amino acid derivatives through an irreversible oxy‐2‐azonia‐Cope rearrangement is reported. In the presence of AlCl3, the reaction of imino ethyl glyoxalates with various β,γ‐unsaturated ketones furnished the corresponding allyl α‐amino acid derivatives. The key to the success of this method is the amide bond formation, which makes the rearrangement irreversible. This reaction system constitutes a new strategy for the synthesis of unusual allyl glycine derivatives, which are valuable synthetic intermediates. An efficient and operationally simple three‐component version of this reaction was also performed.

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Section: Introductionsupporting

confidence: 62%

Irreversible Oxy‐2‐azonia‐Cope Rearrangements for the Synthesis of Functionalized Allyl α‐Amino Acid Derivatives

Zhou

Zou

et al. 2014

Eur J Org Chem

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“…as well as a low value of k. A large value for the power factor of a material requires it to possess a large effective mass (m*) and high carrier mobility m. 2 Several strategies such as doping, [3][4][5][6] solid solution alloying, [7][8][9][10] and nanostructuring/nanocomposite, [11][12][13][14][15][16] have been utilized to modify the structure, hence improving the thermoelectric properties. Such microstructural modications lead to several important mechanisms e.g.…”

Section: Introductionmentioning

confidence: 99%

Graphene boosts thermoelectric performance of a Zintl phase compound

et al. 2015

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The concept of nanocomposites derived by incorporating a second minor phase in bulk thermoelectric materials has established itself as an effective paradigm for optimizing high thermoelectric performance.In this work, this paradigm is for the first time extended to bulk Zintl phase Mg 3 Sb 2 and its isoelectronically Bi-doped derivative Mg 3 Sb 1.8 Bi 0.2 system. Herein, we report the synthesis, microstructural details, electronic structure and thermoelectric properties of (Mg 3 Sb 2 , Mg 3 Sb 1.8 Bi 0.2 )/ graphene nanosheet (GNS) nanocomposites with different mass ratios. Field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) investigation reveals that Mg 3 Sb 2 nanoparticles are homogenously anchored on the surface of GNS. We demonstrate that Mg 3 Sb 2 -based materials incorporated with a small content of graphene outperform optimally, resulting in potential ptype thermoelectric materials. The present nanocomposite additive of GNS deriving such a novel nanocomposite of (Mg 3 Sb 2 , Mg 3 Sb 1.8 Bi 0.2 )/GNS, enhances the electrical conductivity significantly, thereby resulting in a substantially large increase in the power factor. The enhanced electrical conductivity of these nanocomposites is attributed to the increase in the carrier concentration and high carrier mobility owing to the ultra high mobility of graphene. X-ray photoelectron spectroscopy (XPS) core level spectra confirm weak bonding between GNS and Mg 3 Sb 2 . Increase in carrier concentration is reflected in XPS valence band spectra and change in spectral weight near valence band maxima is indicative of increased electrical conductivity in the nanocomposite material. The thermal conductivity of these nanocomposites is noted to be reduced at high temperature. These favorable conditions lead to enhanced thermoelectric figure-of-merit (ZT) z 0.71 at 773 K for Mg 3 Sb 2 /GNS and a ZT z 1.35 at 773 K for Mg 3 Sb 1.8 Bi 0.2 /GNS nanocomposites with the mass ratio of 80 : 1 which are $170% and $125% higher values compared to bare Mg 3 Sb 2 and bare Mg 3 Sb 1.8 Bi 0.2 respectively. We strongly believe that the present novel strategy of fabricating such a nanocomposite of a Zintl compound by utilizing GNS as a nanocomposite additive, may provide an emerging path for improving thermoelectric properties of various Zintl phase compounds.

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“…In addition, as mentioned in the XRD part, we assume that the crystal structure of Sn 0.5 Ag 0.5 Te (x = 0.5) can contain some ordering of the Sn/Ag site and/or Sn and/or Ag valence. The Sn/Ag site ordering may cause the structure distortion into a lower symmetry phase as observed in Ag 0.5 Bi 0.5 Se (AgBiSe 2 ), whose crystal structure changes from cubic to hexagonal at lower temperatures [25]. Therefore, detailed analysis of the valence states (for both Ag and Sn) and low-temperature crystal structure of Sn 1-x Ag x Te is important to further understand the superconductivity phase diagram of the Sn 1-x Ag x Te system.…”

mentioning

confidence: 99%

“…2 2 GPa (500ºC) 6.17670(8) -HP-0. 25 2 GPa (500ºC) 6.1403(3) -HP-0.33 2 GPa (500ºC) 6.1076(5) -HP-0. 5 2 GPa (500ºC) 6.0828(2) - ) for Sn 1-x Ag x Te as a function of lattice constant.…”

mentioning

confidence: 99%

High-Pressure Synthesis and Superconductivity of Ag-Doped Topological Crystalline Insulator SnTe (Sn₁₋_xAg_xTe with x = 0–0.5)

Mizuguchi

Miura

2016

J. Phys. Soc. Jpn.

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We have synthesized the single-phase polycrystalline samples of Sn 1-x Ag x Te, Ag-doped topological crystalline insulator SnTe, with a range of x ≤ 0.5 using a high-pressure synthesis method. The crystal structure of Sn 1-x Ag x Te at room temperature is a cubic NaCl-type structure, which does not vary upon Ag substitution. Bulk superconductivity with a transition temperature of 2.4 K was observed for x = 0.15-0.25, and the optimal Ag content was x = 0.2. The Sn 1-x Ag x Te superconducting phase will be useful for understanding the superconductivity nature and mechanisms of the carrier-doped SnTe system.Topological insulators are a new class of materials that exhibits fully-gaped states in bulk and gapless metallic states at the surface, which are protected by time-reversal symmetry [1][2][3]. In addition, superconductors derived from topological insulators have been actively studied with expectations of

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High Thermoelectric Properties of n-Type AgBiSe₂

Cited by 144 publications

References 19 publications

Irreversible Oxy‐2‐azonia‐Cope Rearrangements for the Synthesis of Functionalized Allyl α‐Amino Acid Derivatives

Irreversible Oxy‐2‐azonia‐Cope Rearrangements for the Synthesis of Functionalized Allyl α‐Amino Acid Derivatives

Graphene boosts thermoelectric performance of a Zintl phase compound

High-Pressure Synthesis and Superconductivity of Ag-Doped Topological Crystalline Insulator SnTe (Sn₁₋_xAg_xTe with x = 0–0.5)

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High Thermoelectric Properties of n-Type AgBiSe2

Cited by 144 publications

References 19 publications

Irreversible Oxy‐2‐azonia‐Cope Rearrangements for the Synthesis of Functionalized Allyl α‐Amino Acid Derivatives

Irreversible Oxy‐2‐azonia‐Cope Rearrangements for the Synthesis of Functionalized Allyl α‐Amino Acid Derivatives

Graphene boosts thermoelectric performance of a Zintl phase compound

High-Pressure Synthesis and Superconductivity of Ag-Doped Topological Crystalline Insulator SnTe (Sn1−xAgxTe with x = 0–0.5)

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Product

Resources

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High Thermoelectric Properties of n-Type AgBiSe₂

High-Pressure Synthesis and Superconductivity of Ag-Doped Topological Crystalline Insulator SnTe (Sn₁₋_xAg_xTe with x = 0–0.5)