High-Throughput Fabrication of Photoconductors with High Detectivity, Photosensitivity, and Bandwidth

Xing, Weiyi; Kung, Sheng-Chin; Veer, Wytze E. van der; Yan, Wenbo; Ayvazian, Talin; Kim, Jung Yun; Penner, Reginald M.

doi:10.1021/nn301567c

Cited by 26 publications

(38 citation statements)

References 29 publications

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“…Table 1 briefly summarizes the key metrics of the present device and other CdSe nanostructure based PDs. It clearly shows that the R, G and D* for the HGNs@CdSe NR device are much higher than other CdSe nanostructure based PDs, including CdSe NW [28,29], CdSe NW arrays [30], CdSe NPs [31], CdSe/ZnS QD [32], and CdSe NB [20], which corroborate that the plasmonic HGNs play an important role in determining the high performance of the nano-photodetector. It should be noted that in this table, the variation in device performance of other CdSe nanostructures is largely due to the following three factors: (1) The quality of the nanostructure.…”

Section: Resultsmentioning

confidence: 54%

Surface plasmon propelled high-performance CdSe nanoribbons photodetector

Luo¹,

Xie²,

Zou³

et al. 2015

Opt. Express

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In this work, we present a plasmonic photodetector (PPD) with high sensitivity to red light illumination. The ultrasensitive PPD was composed of high-crystalline CdSe nanoribbons (NRs) decorated with plasmonic hollow gold nanoparticles (HGNs) on the surface, which were capable of coupling the incident light due to localized surface plasmon resonance (LSPR). Device analysis reveals that after modification of HGNs, both responsivity and detectivity were considerably improved. Further device performance analysis and theoretical simulation based on finite element method (FEM) find that the optimized performance is due to HGNs induced localized field enhancement and direct electron transfer.

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Section: Resultsmentioning

confidence: 54%

Surface plasmon propelled high-performance CdSe nanoribbons photodetector

Luo¹,

Xie²,

Zou³

et al. 2015

Opt. Express

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“…The relationship between the illumination intensity and illumination power density is shown in Table S1 in the Supporting Information. The responsivities of the CdS photodetector are shown in Figure a, and the comparison diagram of the responsivities in this work and other reported photodetectors such as CdS, ZnO, and CdSe based photodetectors for various wavelength are shown in Figure b …”

Section: Resultsmentioning

confidence: 63%

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Zhao

Liu

et al. 2017

Advanced Optical Materials

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light absorption, [3] as well as the unique optoelectronic properties. [4][5][6][7] Therefore, many researchers are devoted to synthesize various of 1D nanostructures with controllable size, morphology, orientation, and crystallinity. Until now, various 1D nonostructures including nanorods (NRs), nanowires, nanotubes, and nanobelts [4,5,8,9] have been synthesized by many approaches such as chemical vapor deposition (CVD), focused ion beam, vapor-liquid-solid and chemical solutions. [10][11][12][13] Among 1D nanomaterials, 1D nanostructured semiconductor exhibited extensive application in light-emitting diode, transistors, lasers, solar cells, panel displays, field emitters, and photodetector devices. [4,12,14,15] As one of the most important optoelectronic devices, photodetectors can be used to convert the optical signal into electrical signal. Generally, the photodetectors based on 1D nanostructures show high sensitivity, large photocurrent gain, good reliability, and fast response time. [11,16,17] As we know, various 1D semiconductor nanomaterials have been used to fabricate photodetectors such as CdS, ZnO, ZnS, SnO 2 , WS 2 , CdTe, ZnTe, and In 2 Te 3 . [4,[18][19][20][21][22] It has been concluded that the photoresponse properties of these fabricated detectors are determined critically by a variety of parameters including selected materials, contact type of device, as well as the crystalline quality and dimension.As a significant II-VI chalcogenide semiconductor, wurtzite CdS is a direct bandgap semiconductor with the band energy of 2.42 eV at room temperature. [23] The particular characteristics of CdS such as excellent photoconductivity, good chemical stability, low work function (4.2 eV), and the working in visible spectrum, [24] make CdS become a promising candidate in photodetectors. [25] In recent years, many efforts have been used to improve the performance of the CdS photodetector with the novel type of device structure such as side-gated field-effect transistor. [26,27] While, in the area of the traditional Ohmic contact based photodetectors, many efforts still have been dedicated to improve the quantum efficiency, photoresponse ratio, sensitivity, and response time of 1D CdS nanowires photodetectors. [28][29][30] However, less attention has been paid to improve the responsivity of CdS nanwires photodetector despite it is the important parameter to evaluate the device performance such as the ability of the photoelectric conversion.1D nanoscale photodetectors have been extensively investigated for the unique geometry structure and novel physical and chemical properties. The 1D CdS materials have received much attention in the field due to its high photosensitivity and fast response, while how to achieve high responsivity is still in development, despite it is the crucial target to the excellent photo detector. Single crystal CdS nanorods (NRs) are synthesized on SiO 2 /Si substrate over large scale via the chemical vapor deposition method. The individual single CdS nanorod photodetector have been fabr...

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“…Until now, various types of UV photodetectors have been realized including p–n junction, Schottky barrier photodiodes, and photoconductors . In particular, owing to their high photo‐responsivity from photoconductive gain, simple fabrication process, and low cost, UV photoconductors offer an attractive alternative for low‐light detection without any preamplifier, and achieved widely commercial applications . Unfortunately, UV photoconductors are not without their disadvantages.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh‐Gain Single SnO₂ Microrod Photoconductor on Flexible Substrate with Fast Recovery Speed

Liu

Sakurai

Aono

et al. 2015

Adv Funct Materials

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Owing to the special properties and wide applications, UV photodetectors based on wide‐band‐gap semiconductors have drawn an increasing interest during the last two decades. However, practical UV photodetectors are required two contradictory performances: high internal gain and fast recovery speed, because high internal gain is achieved by long life time of photoexcited carriers and fast recovery needs their fast decay. Their slow decay in wide‐band‐gap semiconductors has been known as a persistent photoconductivity (PPC) problem and hinders applications. In this paper, a good solution to the above contradictory problem is demonstrated on a single SnO2 microrod photoconductor, which shows both high photoconductive gain (≈1.5 × 109) and quick recovery speed (<1 s). Notably, the quick recovery speed is associated with the removal of the persistent photoconductivity effect (>1 d), which is induced by a novel “reset” process: bending and straightening the microrod and subsequently applying a voltage pulse. This result suggests that SnO2 microrods have potential applications in high‐performance UV photodetecting devices.

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High-Throughput Fabrication of Photoconductors with High Detectivity, Photosensitivity, and Bandwidth

Cited by 26 publications

References 29 publications

Surface plasmon propelled high-performance CdSe nanoribbons photodetector

Surface plasmon propelled high-performance CdSe nanoribbons photodetector

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Ultrahigh‐Gain Single SnO₂ Microrod Photoconductor on Flexible Substrate with Fast Recovery Speed

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High-Throughput Fabrication of Photoconductors with High Detectivity, Photosensitivity, and Bandwidth

Cited by 26 publications

References 29 publications

Surface plasmon propelled high-performance CdSe nanoribbons photodetector

Surface plasmon propelled high-performance CdSe nanoribbons photodetector

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Ultrahigh‐Gain Single SnO2 Microrod Photoconductor on Flexible Substrate with Fast Recovery Speed

Contact Info

Product

Resources

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Ultrahigh‐Gain Single SnO₂ Microrod Photoconductor on Flexible Substrate with Fast Recovery Speed