High throughput method for K0.5Na0.5NbO3 thin films preparation by chemical solution deposition

Schroeter, Christian; Wessler, B.; Eng, Lukas M.

doi:10.1016/j.jeurceramsoc.2007.02.033

Cited by 20 publications

(17 citation statements)

References 12 publications

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“…1) and amorphous SiO 2 /Si (Fig. 2) substrates after sintering at 650°C [9]. In the NN film on Pt/SiO 2 /Si substrate the XRD peaks exhibit weaker peak intensities.…”

Section: Resultsmentioning

confidence: 97%

“…The final perovskite phase forms from the transformation of pyrochlore phase during sintering at 500-700°C. The substrates seems to play an important role affecting the phase formation and growth of the perovskite film on substrate (SrTiO 3 , MgAl 2 O 4 , or Al 2 O 3 and Pt/SiO 2 /Si) [9,10]. In NN film, the pyrochlore NaNb 3 O 8 phase forms at about 620°C and the perovskite NaNbO 3 phase appears at 440°C and is increasing in an amount upon reaching temperatures of 700-800°C [11,12].…”

Section: Introductionmentioning

confidence: 99%

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MICROSTRUCTURE OF NaNbO3 THIN FILMS PREPARED BY SOL-GEL METHOD ON ALUMINA AND SILICON SUBSTRATES

Bruncková¹,

Medvecký²,

Hvizdoš³

et al. 2013

Acta Metall. Slovaca Conf.

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Lead-free ferroelectric NaNbO 3 (NN) thin films (~ 200 nm thickness) were prepared using solgel method, deposited by spin-coating method on platinized alumina or silicon substrates and sintered at 650°C. X-ray diffraction (XRD) analysis indicated that the NN film on the Pt/SiO 2 /Si substrate possessed a single perovskite NaNbO 3 phase, while NN film on the Pt/Al 2 O 3 substrate contained a small amount of secondary pyrochlore Na 2 Nb 8 O 21 phase. Scanning electron microscopic (SEM) and atomic force microscopic (AFM) analyses confirmed that roughness R q of the thin NN/Pt/SiO 2 /Si film (~ 15.0 nm) was significantly lower than that of the KNN/Pt/Al 2 O 3 film (~ 51.5 nm). The particle morphology in the heterogeneous microstructure of NN films was characterised by the bimodal particle size distribution and small spherical nanoparticles on both substrates and larger cuboidal particles on Pt/Al 2 O 3 and spherical clusters on Pt/SiO 2 /Si were observed. The effect of different substrates on the surface morphology and cross-section of thin films was confirmed.

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“…1) and amorphous SiO 2 /Si (Fig. 2) substrates after sintering at 650°C [9]. In the NN film on Pt/SiO 2 /Si substrate the XRD peaks exhibit weaker peak intensities.…”

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

MICROSTRUCTURE OF NaNbO3 THIN FILMS PREPARED BY SOL-GEL METHOD ON ALUMINA AND SILICON SUBSTRATES

Bruncková¹,

Medvecký²,

Hvizdoš³

et al. 2013

Acta Metall. Slovaca Conf.

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“…Such thin films on ZrO 2 and Pt-coated silicon substrates exhibited high P r values of about 16-38 mC cm À2 [80,86]. Schroeter et al [81] launched a high throughput experimentation (HTE) for the production of KNN, KNbO 3 (KN), and NaNbO 3 (NN) thin films by CSD with an automated sample preparation and characterization method. It has been shown that the optimum excess amount of alkaline elements for KNN films with 450 nm thickness on Pt/SiO 2 /Si substrates is about 35%.…”

Section: Knn Films Prepared By Chemical Deposition Techniquesmentioning

confidence: 99%

“…The hygroscopic nature of the films causes the environmental moisture to be absorbed into the porosities available in the film which then increases the leakage current and dissipation factor of the films. It has been suggested that drying the films at 50 C is beneficial to reducing the loss tangent from 20% down to 5% [81].…”

Section: Knn Films Prepared By Chemical Deposition Techniquesmentioning

confidence: 99%

Lead-Free KNN-Based Piezoelectric Materials

Safari

Hejazi

2011

Lead-Free Piezoelectrics

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Sodium potassium niobate with the general chemical formula of K 1 À x Na x NbO 3 (KNN hereafter) is one of the most attractive lead-free materials which have been extensively investigated throughout the last decade.KNN is a solid solution of NaNbO 3 (NN) and KNbO 3 (KN) compounds. A KNN phase diagram comprised of the tetragonal, orthorhombic, and monoclinic ferroelectric regions and an orthorhombic antiferroelectric region is depicted in Fig. 5.1.The phase transitions and variations of dielectric properties of pure KNN vs. temperature resemble those of BaTiO 3 (BT), but every transition occurs at a higher temperature compared to BT ceramics.

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“…further emphasized the importance of this material system by discovering a new morphotropic phase boundary in the potassium sodium niobate system. Since then, concerted effort has been undertaken to develop a simple and economic solution‐based approach to potassium sodium niobate (KNN) thin films 2–14 . Hence, various reports referring to the processing and characteristics of alkaline niobate thin films, mainly potassium sodium niobate, have been published.…”

Section: Introductionmentioning

confidence: 99%

Precursor Homogeneity and Crystallization Effects in Chemical Solution Deposition‐Derived Alkaline Niobate Thin Films

Röscher

Tappertzhofen

Schneller

2011

Journal of the American Ceramic Society

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Chemical solution deposition‐derived potassium niobate and sodium niobate thin films have been prepared under protective atmosphere using an alkoxide approach. A profound dependency of the quality and homogeneity of the resulting thin films on the preparation of the alkaline precursor has been found. In addition to this, an additional increase in microstructure homogeneity for the significantly more sensitive potassium niobate system is obtainable if the precursor solution is further stabilized by acetylacetone although ambient humidity is already strongly suppressed. The observed behavior is attributed to the stabilization of the heterometallic complex in the precursor solution until film deposition commenced. Further on, the crystallization pathway of the respective alkaline niobate thin films has been evaluated and indication of crystallization through a metastable phase has been provided which seems to play a key role in orientation control. Finally, the temperature dependency of the lattice parameter spacing for potassium niobate and sodium niobate thin films has been presented and evidence of a strong substrate‐induced lattice deformation has been given.

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High throughput method for K0.5Na0.5NbO3 thin films preparation by chemical solution deposition

Cited by 20 publications

References 12 publications

MICROSTRUCTURE OF NaNbO3 THIN FILMS PREPARED BY SOL-GEL METHOD ON ALUMINA AND SILICON SUBSTRATES

MICROSTRUCTURE OF NaNbO3 THIN FILMS PREPARED BY SOL-GEL METHOD ON ALUMINA AND SILICON SUBSTRATES

Lead-Free KNN-Based Piezoelectric Materials

Precursor Homogeneity and Crystallization Effects in Chemical Solution Deposition‐Derived Alkaline Niobate Thin Films

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