High‐throughput method to deposit continuous composition spread Sb₂(Se_xS_1 − x)₃thin film for photovoltaic application

Abstract

Sb 2 (Se x S 1 − x ) 3 alloy materials with tunable bandgaps combining the advantages of Sb 2 S 3 and Sb 2 Se 3 showed high potential in low cost, non-toxicity, and high stability solar cells. The composition dependence of device performance becomes indispensable to study. However, traditional approaches often implement 1 composition at a time, which easily lead to long period and systematic errors. The present work developed a high-throughput experimental method, close-space dual-plane-source evaporation (CDE) method, to successfully deposit continuous composition spread Sb 2 (Se x S 1 − x ) 3 library at 1 time. On the surface of the obtained film, the x value of Se content evolved from 0.09 to 0.84 by a series of complementary characterizations. At depth direction, the alloy film kept high crystallinity and composition consistency. Solar cell arrays (19 × 6) were fabricated to investigate the relationship between compositions and performances. As the increase of Se content, the conversion efficiency first increased from 1.8% to 5.6% and then decreased to 5%. The V oc and J sc demonstrated an opposite evolution trend. The champion device with the composition of Sb 2 (Se 0.68 S 0.32 ) 3 achieved the V oc and J sc trade-off exceeding the performances of Sb 2 S 3 (2.43%) and Sb 2 Se 3 (4.97%) devices. Cryogenic and transient characterizations were utilized to investigate the distinct performance evolution mechanism. There existed shallow defect levels in Se-rich alloys and deep defects in sulfur-rich ones. The widely tuned absorber compositions combined with distinct defect characters induced to the large variation of device performance. The present continuous composition spread Sb 2 (Se x S 1 − x ) 3 film and their CDE fabrication technique were expected to efficiently screen materials and promote the development of antimony chalcogenide solar cells.

Efficient Double Buffer Layer Sb2 (SexS1–x)3 Thin Film Solar Cell Via Single Source Evaporation

“…And the grain size of Sb 2 (Se x S 1–x ) 3 shrank from 500 to 200 nm as Se contents increased gradually. This evolution trend was consistent with XRD results, the same as our previous report …”

“…The antimony chalcogenides such as Sb 2 Se 3 , Sb 2 S 3 , and Sb‐based sulfoselenide alloys possess high extinction coefficient ≈10 5 cm −1 in UV–vis range . More importantly, they are environment friendly, earth abundant, and in more simple phase . Thus they showed high potential in the photovoltaic application.…”

“…Oscar et al adopted thermal evaporation of CBD based Sb 2 S 3 and Sb 2 Se 3 mixture to fabricate planar Sb 2 (S 0.47 Se 0.53 ) 3 solar cells with a PCE of 5.47% . Recently, our group utilized co‐evaporation of Sb 2 S 3 and Sb 2 Se 3 double source to implement antimony chalcogenide sample library . In the above‐mentioned work, two‐steps or two sources are utilized to achieve alloy film.…”

Improved Open‐Circuit Voltage of Sb2Se3 Thin‐Film Solar Cells Via Interfacial Sulfur Diffusion‐Induced Gradient Bandgap Engineering

“…Such phenomenon has also been witnessed in our previous work as the selenium was partly replaced by sulfur in Sb 2 (Se x S 1− x ) 3 thin film. [ 38 ] Thus, we assumed that the S might further diffused into Sb 2 Se 3 film at the interface, forming a comparatively larger bandgap Sb 2 (S,Se) 3 thin layer to boost the V OC . While a nearly nonfluctuated J SC can be attributed to the Se‐rich/pure Sb 2 Se 3 outer part of the absorber layer.…”

Sequential Coevaporation and Deposition of Antimony Selenosulfide Thin Film for Efficient Solar Cells

“…[ 4,5 ] In single‐source evaporation, both simple component and multicomponent materials can be fabricated, provided that the source materials contain the elements of the target product; [ 6,7 ] for example, the evaporation of pre‐synthesized antimony selenosulfide (Sb 2 (S,Se) 3 ) or a mixture of Sb 2 Se 3 and Sb 2 S 3 powders can generate Sb 2 (S,Se) 3 films. [ 8,9 ] Nevertheless, owing to different melting points and vapor pressures, delicately controlling the chemical composition or stoichiometry by using this method remains a great challenge.…”