High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

Benzitouni, Sara; Zaabat, Mourad; Mahdjoub, A.; Benaboud, A.; Boudine, B.

doi:10.1515/msp-2018-0037

Cited by 12 publications

(7 citation statements)

References 47 publications

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“…The thin film obtained by sputtering a target with 5.0 mol% In 2 O 3 has a minimum sheet resistance R S of 69 Ω/sq and, accordingly, a maximum conductivity σ = 452.9 Ω −1 •cm −1 (Table 1). A similar dependence of the conductivity on the doping level was previously observed for heavily In-doped ZnO films obtained by high-temperature dip-coating and aerosol assisted chemical vapour deposition methods [34,35]. They also noticed a decrease in conductivity at same doping level.…”

Section: Resultssupporting

confidence: 83%

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Akhmedov

Abduev²,

Murliev

et al. 2021

Materials

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The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In2O3) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.

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Section: Resultssupporting

confidence: 83%

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Akhmedov

Abduev²,

Murliev

et al. 2021

Materials

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“…In the following subsection, we examine the zinc oxide's Nd doped percentage concentration, we use undoped ZnO (P_ZnO), Aluminum doped ZnO (Al_ZnO) and Indium doped ZnO (In_ZnO) in this structure "FTO/ (P_ZnO, Al_ZnO, In_ZnO)/CH3NH3PbI3/CuInSe2/Au". Undoped ZnO prepared by S.Benzitouni et al in 2018 [6], the obtained result 3.26eV as band gap energy (Eg) and carrier concentration (Nd) equal to 2*10^13cm -3 . The Al doped ZnO prepared by A.Nakrela and co-authors [22], he obtained 3.269eV as band gap energy and the Nd equal to 7.589×10 18 cm -3 .…”

Section: Results and Discussion 31 Effect Of Carrier Concentration Of...mentioning

confidence: 93%

“…All parameters of simulation are selected in table 1 from experimental and other theoretical results [2][4] [6][9] [22][23][24][25][26], the absorption coefficient (α) of CH3NH3PbI3 prepared by [2], while the absorption coefficient of ZnO and CuInSe2 by SCAPS 1d.…”

Section: Details Of Simulationmentioning

confidence: 99%

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Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D

Kerara,

Naas,

Reggab

2024

J. Eng. Exact Sci.

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This study uses the SCAPS 1D software to analyze solar cells with lead iodide perovskite (CH3NH3PbI3) as the active material and three different types of ZnO doping: undoped (P_ZnO), aluminum-doped (Al_ZnO), and indium-doped (In_ZnO) as the electron transport layer (ETL). This study aims to investigate the effects of charge carrier density on the J-V characteristics and electrical properties (Jsc, Voc, FF, Eff) of a solar cell structure made up of FTO/ETL/CH3NH3PbI3/CuInSe2/Au. Gold makes up the back contact, and tin oxide doped with fluorine (FTO) makes up the front contact. These two compounds have work roles are 5.47 eV and 4.4 eV respectively. Zinc oxide, both undoped and doped, makes up the electron transport layer, whereas methyl ammonium lead iodide makes up the absorber layer. Thin sheets, indium diselenide, and copper make up the hole transport layer. An optimal perovskite layer was obtained by decreasing the electron transportation layer's thickness (ETL) from 500 to 100 nm. For the In_ZnO ETL, this optimization was accomplished at 300K working temperature. Reduced ETL thickness was shown to result in higher efficiency (above 27%), as well as higher fill factor (above 87%). With a Voc value of 1.180V, a FF value of 87.55%, and a Jsc value of 26.276mA/cm2, the greatest efficiency performance of 27.15% was found. Using an absorber layer made of CH3NH3PbI3 with a thickness of 800 nm and indium-doped oxide of zinc (In_ZnO) is the layer that transports electrons, this performance was achieved. The results are obtained at a constant irradiance level of 1000 W/m2, under the AM1.5G spectrum.

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“…%) were prepared by sol-gel dip-coating method using materials previously mentioned. The same experimental method used in our previous works was adopted here in the preparation of these thin films [11,[18][19][20]. These materials were dissolved in absolute ethanol with a total molarity of 0.3 M. Mono-ethanolamine (MEA) was added to the mixture as a stabilizer with molar ratio of 0.1.…”

Section: Preparation Of Undoped and Tm-doped Zno Thin Filmsmentioning

confidence: 99%

Effect of Transition Metals on the Mechanical Properties of ZnO Thin Films, Prepared by Sol-Gel Method

Benzitouni

Zaabat

Ebothé

et al. 2020

JNanoR

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Undoped and transition metals (TM = Cr, Ni, Mn and Cd) doped zinc oxide (ZnO) thin films were prepared by sol-gel dip-coating method on glass substrates at 300 °C. In this study, the effect of dopant material on the structural, morphological, optical, electrical and mechanical properties of ZnO thin films is investigated by using XRD, AFM, UV-Vis, Hall effect and nanoindentation techniques, respectively. Nanocrystalline films with a ZnO hexagonal wurtzite structure and two preferred orientations (002) and (103) were obtained. UV-Vis transmittance spectra showed that all the films are highly transparent in the visible region (> 80 %). Moreover, the optical band gap of the films decreased to 3.13 eV with an increasing orbital occupation number of 3d electrons. AFM-topography shows that the films are dense, smooth and uniform, except for the high roughness RMS =26.3 nm obtained for Cd-doped ZnO. Finally, the dopant material is found to have a significant effect on the mechanical behavior of ZnO as compared to the undoped material. For Ni and Cd dopants, analysis of load and unload data yields an increase in the hardness (8.96 ± 0.22 GPa) and Young’s modulus (122 ± 7.46 GPa) of ZnO as compared to Cr and Mn dopants. Therefore, Ni and Cd are the appropriate dopants for the design and application of ZnO-based nanoelectromechanical systems.

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High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

Cited by 12 publications

References 47 publications

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D

Effect of Transition Metals on the Mechanical Properties of ZnO Thin Films, Prepared by Sol-Gel Method

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