High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation

Wu, Jiang-Bin; Chen, Hung-Yu; Yang, Ning; Cao, Jun; Yan, Xiaodong; Liu, Fanxin; Sun, Qibin; Ling, Xi; Guo, Jing; Wang, Han

doi:10.1038/s41928-020-0441-9

Cited by 197 publications

(171 citation statements)

References 48 publications

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“…independently demonstrated the α‐In 2 Se 3 based ferroelectric RAM. [ 172,186–188 ] These works show that both monolayer and multilayer α‐In 2 Se 3 exhibit on/off ratio. Notably, Poh et al.…”

Section: Ferroelectric Materials and Fe‐gated Heterostructuresmentioning

confidence: 91%

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

Chu

Wang

et al. 2020

Advanced Materials

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The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices’ application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.

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Section: Ferroelectric Materials and Fe‐gated Heterostructuresmentioning

confidence: 91%

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

Chu

Wang

et al. 2020

Advanced Materials

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“…Comparison of the current optimal value of various 2D memories, including floating-gate transistors, [34,39,66] charge trapping devices, [38,54,92] FeFETs, [102,112,118,122] RRAMs, [74,75,140] PCMs, [76,159] and FeRAMs. [163,166] For details, please see the corresponding sections.…”

Section: Figurementioning

confidence: 99%

Emerging 2D Memory Devices for In‐Memory Computing

et al. 2021

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cube (HMC), [5] high bandwidth memory (HBM), [6,7] and 3D monolithic integration, [8] have been successively developed and achieved some success, the challenge of latency and energy consumption caused by massive data transmission still remains. Therefore, it is urgently necessary to enhance the information interaction capability by improving the architectural relationship between processing and memory units.The emergence of non-von-Neumann architecture solves the problem of the separation of processing and memory units, and alleviates the impact of bus bandwidth on computing efficiency. As a non-Von Neumann architecture, in-memory computing has been considered to be one of the future mainstream trends of hardware implementation for AI algorithms, [9] such as machine learning and deep learning. In-memory computing, where calculations are carried out in situ within each memory unit, [10] has massive parallelism and distributed computing characteristic through integrating millions of memory devices in a crossbar array (Figure 1), analogous to the neurobiological system. [11] Thus, it can radically subvert the von Neumann architecture and achieve the fusion of data processing and storage, thereby totally eliminating the latency and energy loss associated with data access. For enabling this computational architecture, new material systems and highperformance memory devices are highly pursued.2D layered materials refer to the material family that held together by strong in-plane chemical bonds and relatively weak out-of-plane van der Waals interactions, and have attracted worldwide attention due to their unique structure and physical properties. [12][13][14][15][16][17][18][19][20][21] On the one hand, the atomically thin thickness of 2D layered materials provide a significant advantage in achieving high-density integration and low-power operation of high-performance devices. [22][23][24][25][26][27][28] On the other hand, their dangling-bond-free surface and planar structure make them not only compatible with traditional wafer technology, but also can be stacked on top of each other unrestricted by lattice mismatch. Thus, varieties of available 2D layered materials with different electrical properties, such as graphene, transition metal dichalcogenides (TMDs, including MoS 2 , WSe 2 , MoTe 2 , etc.), black phosphorus (BP) and hexagonal boron nitride (h-BN), could be arbitrarily assembled to create a wide range of artificial van der Waals heterostructures (vdWHs) with wholly new functionalities that unavailable in the individual material. [29][30][31][32][33] For example, stable data storage can be realized with the aid of potential barrier formed in vdWHs. [34][35][36][37][38][39] Additionally, It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonv...

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“…[58][59][60] Generally, the tunneling barrier height is dependent on the asymmetry of the heterojunction and can be evaluated by the Hartree difference potential (dV H ). 61,62 Herein, dV H is calculated from the electron difference density as:…”

Section: Li-ions By Comparing the Band Structures Of B/c 4 N 4 Vdw Hmentioning

confidence: 99%

Elimination of interlayer Schottky barrier in borophene/C₄N₄ vdW heterojunctions via Li-ion adsorption for tunneling photodiodes

et al. 2021

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High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation

Cited by 197 publications

References 48 publications

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

Emerging 2D Memory Devices for In‐Memory Computing

Elimination of interlayer Schottky barrier in borophene/C₄N₄ vdW heterojunctions via Li-ion adsorption for tunneling photodiodes

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High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation

Cited by 197 publications

References 48 publications

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

Emerging 2D Memory Devices for In‐Memory Computing

Elimination of interlayer Schottky barrier in borophene/C4N4 vdW heterojunctions via Li-ion adsorption for tunneling photodiodes

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Elimination of interlayer Schottky barrier in borophene/C₄N₄ vdW heterojunctions via Li-ion adsorption for tunneling photodiodes