High-Value Tunable Pseudo-Resistors Design

Guglielmi, Emanuele; Toso, Fabio; Zanetto, Francesco; Sciortino, Giuseppe; Mesri, Alireza; Sampietro, Marco; Ferrari, Giorgio

doi:10.1109/jssc.2020.2973639

Cited by 72 publications

(33 citation statements)

References 28 publications

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“…The series connection is useful when large resistance values for wide voltage ranges are needed. Some applications require tunable pseudo-resistors, where tuning can be achieved using a DC voltage [8,12] or a DC current [13], as shown in Figure 3. Further details and examples of pseudo-resistors can be found in [8].…”

Section: Wideband Capacitive Coupling Using Quasi-floating Gate Transmentioning

confidence: 99%

“…Some applications require tunable pseudo-resistors, where tuning can be achieved using a DC voltage [8,12] or a DC current [13], as shown in Figure 3. Further details and examples of pseudo-resistors can be found in [8]. The simplest pseudo-resistor is a diode-connected PMOS transistor operating in deep subthreshold, as shown in Figure 2a [5,35,36].…”

Section: Application Of Qfg Transistors To Energy-efficient Amplifiermentioning

confidence: 99%

“…These drawbacks are usually of minor concern when the pseudo-resistor is used in high-gain amplifiers operating in negative feedback, as long as the resistance remains high enough for the QFG transistor to process the lowest frequency of the input signal V sig in Figure 1c. When symmetric I-V characteristics are required, elementary devices can be mirrored either in series or in parallel, as shown in Figure 2b,c, respectively, for the case of two elements [8]. The series connection is useful when large resistance values for wide voltage ranges are needed.…”

Section: Application Of Qfg Transistors To Energy-efficient Amplifiermentioning

confidence: 99%

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Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

et al. 2021

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Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage, energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example, including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage, ultra-low-power amplifiers can be designed, preserving, at the same time, excellent small-signal and large-signal performance.

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Section: Wideband Capacitive Coupling Using Quasi-floating Gate Transmentioning

confidence: 99%

Section: Application Of Qfg Transistors To Energy-efficient Amplifiermentioning

confidence: 99%

Section: Application Of Qfg Transistors To Energy-efficient Amplifiermentioning

confidence: 99%

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Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

et al. 2021

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“…The pseudoresistor R pr was obtained by using a pair of back-toback diode connected nMOS, with the bulk short-circuited to the source, to ensure very low injection of noise and symmetric behavior for both positive and negative dc currents [5]. Since the pseudoresistor is made by MOS transistors operating in subthreshold, its equivalent small signal resistance R pr changes with the dc input current I DC , according to the relation R pr = n • V th /I DC , where V th is the thermal voltage and n ≈ 1.5 is the subthreshold coefficient.…”

Section: A Active DC Handling Networkmentioning

confidence: 99%

Wide Dynamic Range Multichannel Lock-In Amplifier for Contactless Optical Sensors With Sub-pS Resolution

Zanetto

Guglielmi

Toso

et al. 2020

IEEE Solid-State Circuits Lett.

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A multichannel impedance-sensing CMOS chip for the readout of noninvasive light detectors in silicon photonics (SiP) is presented. The performance of the lock-in phase-sensitive demodulator is improved thanks to a capacitive feedback transimpedance amplifier (TIA) equipped with an active discharge network, able to keep a dc output offset lower than 3 mV for leakage currents up to 4 nA while injecting a noise lower than 40 fA/ √ Hz. The addition of a sensor capacitance compensation system at the input of the chip allows a 30-fold increase of the stimulation amplitude, enabling the tracking of sub-picoSiemens conductance variations on a baseline of few µS, with a bandwidth of 70 Hz. The chip performance opens the way to multipoint monitoring of complex photonic systems, addressing the challenges posed by the growing complexity of these architectures.

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“…In order to achieve the cut off of 0.1 Hz, the required value of the resistance is 1G-ohm. The controlled pseudo MOSFET resistance is used herein to realize the high value resistance (Guglielmi et al 2020 ; Shiue et al 2011 ). The circuit diagram of the pseudo resistance used in this study is shown in Fig.…”

Section: Design Of Ppg Signal Acquisition Sensor and Systemmentioning

confidence: 99%

External temperature sensor assisted a new low power photoplethysmography readout system for accurate measurement of the bio-signs

Pandey

Chao

2020

Microsyst Technol

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This study presents an external temperature sensor assisted a new low power, time-interleave, wide dynamic range, and low DC drift photoplethysmography (PPG) signal acquisition system to obtain the accurate measurement of various bio signs in real-time. The designed chip incorporates a 2-bit control programmable transimpedance amplifier (TIA), a high order filter, a 3:8 programmable gain amplifier (PGA) and 2 9 2 organic light-emitting diode (OLED) driver. Temperature sensor is used herein to compensate the adverse effect of low-skin-temperature on the PPG signal quality. The analog front-end circuit is implemented in the integrated chip with chip area of 2008 lm 9 1377 lm and fabricated via TSMC T18 process. With the standard 1.8 V, the experimental result shows that the measured current sensing range is 20 nA-100 uA. The measured dynamic range of the designed readout circuit is 80 dB. The estimated signal to noise ratio is 60 dB@1 uA, and the measured input referred noise is 60.2 pA/Hz. The total power consumption of the designed chip is 31.32 lW (readout) ? 1.62 mW (OLED driver@100% duty cycle). The non-invasive PPG sensor is applied to the wrist artery of the 40 healthy subjects for sensing the pulsation of the blood vessel. The experimental results show that for every 1°C decrease in mean ambient temperature tends to 0.06 beats/min, 0.125 mmHg and 0.063 mmHg increase in hear rate (HR), systolic (SBP) and diastolic (DBP), respectively. Similarly, for every 1°C increase in mean ambient temperature tends to 0.13 beats/min, 0.601 mmHg and 0.121 mmHg increase in HR, SBP and DBP, respectively. The measured accuracy and standard error for the HR estimation are 96%, and-0.022 ± 2.589 beats/minute, respectively. The oxygen stauration (S p O 2) measurement results shows that the mean absolute percentage error is less than 5%. The resultant errors for the SBP and DBP measurement are-0.318 ± 5.19 mmHg and-0.5 ± 1.91 mmHg, respectively.

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High-Value Tunable Pseudo-Resistors Design

Cited by 72 publications

References 28 publications

Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

Wide Dynamic Range Multichannel Lock-In Amplifier for Contactless Optical Sensors With Sub-pS Resolution

External temperature sensor assisted a new low power photoplethysmography readout system for accurate measurement of the bio-signs

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