High voltage GaN p‐n diodes formed by selective area regrowth

Armstrong, Andrew M.; Pickrell, G.; Allerman, Andrew A.; Crawford, Mary H.; Glaser, Caleb; Smith, Trevor; Abate, Vincent M.

doi:10.1049/el.2019.3587

Cited by 10 publications

(6 citation statements)

References 13 publications

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“…The origin of the leakage current in these regrown nonplanar p-GaN structures has been recently revealed [105], as being related to the n + -type interfacial impurities (e.g. Si, O, C) introduced in the regrowth process [106][107][108][109][110][111][112].…”

Section: Vertical Power Finfetsmentioning

confidence: 99%

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Zhang

Zubair

Liu

et al. 2021

Semicond. Sci. Technol.

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Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-frequency (RF) applications. While commercial GaN devices are increasingly being adopted in data centers, electric vehicles, consumer electronics, telecom and defense applications, their performance is still far from the intrinsic GaN limit. In the last few years, the fin field-effect transistor (FinFET) and trigate architectures have been leveraged to develop a new generation of GaN power and RF devices, which have continuously advanced the state-of-the-art in the area of microwave and power electronics. Very different from Si digital FinFET devices, GaN FinFETs have allowed for numerous structural innovations based on engineering the two-dimensional-electron gas or p–n junctions, in both lateral and vertical architectures. The superior gate controllability in these fin-based GaN devices has not only allowed higher current on/off ratio, steeper threshold swing, and suppression of short-channel effects, but also enhancement-mode operation, on-resistance reduction, current collapse alleviation, linearity improvement, higher operating frequency, and enhanced thermal management. Several GaN FinFET and trigate device technologies are close to commercialization. This review paper presents a global overview of the reported GaN FinFET and trigate device technologies for RF and power applications, as well as provides in-depth analyses correlating device design parameters to device performance space. The paper concludes with a summary of current challenges and exciting research opportunities in this very dynamic research field.

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Section: Vertical Power Finfetsmentioning

confidence: 99%

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Zhang

Zubair

Liu

et al. 2021

Semicond. Sci. Technol.

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“…A two-order of magnitude decrease was observed in defects at both Ec-1.9 eV and Ec-3.3 eV for m-plane GaN. Armstrong et al [45] studied AZ400 K treatment [46] as well. Forward I-V curves of etched-and-regrown p-n diodes exhibited regimes with ideality factors of 2 and ∼1.…”

Section: Device Characterization Leakage Currentmentioning

confidence: 99%

Selective area doping of GaN toward high-power applications

Ferreyra

Wang

et al. 2023

J. Phys. D: Appl. Phys.

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Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors (CAVETs), junction termination extensions (JTEs), junction barrier Schottky (JBS) diodes, junction field-effect transistors (JFETs), vertical-channel junction FETs (VC-JFETs), U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

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“…28) Interestingly, GaN has emerged as a favorable semiconductor candidate for these applications. So far, processes such as ion-implantation 18) and crystal regrowth 42) have been investigated for the ex situ creation of GaN PN junctions. However, both these processes have their advantages and disadvantages.…”

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confidence: 99%

Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process

Sarkar,

Wang,

Badami

et al. 2023

Appl. Phys. Express

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In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal diffusion anneal process increases the effective barrier height at the metal/Ga-polar GaN Schottky interface. Thus, GaN Camel diodes having improved barrier height and turn-on voltage compared to regular GaN Schottky barrier diodes were realized for the first time. Temperature dependent current-voltage characteristics indicated a near-homogeneous and near-ideal behavior of the GaN Camel diode. The analysis performed in this work is thought to be promising for improving the performance of future GaN based unipolar diodes.

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High voltage GaN p‐n diodes formed by selective area regrowth

Cited by 10 publications

References 13 publications

GaN FinFETs and trigate devices for power and RF applications: review and perspective

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Selective area doping of GaN toward high-power applications

Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process

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