High voltage, high speed lateral IGBT in thin SOI for power IC

Leung, Ying K.; Kuehne, S.C.; Huang, Vincent; Nguyen, C.T.; Paul, A.K.; Plummer, J.D.; Wong, S.S.

doi:10.1109/soi.1996.552529

Cited by 16 publications

(4 citation statements)

References 4 publications

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“…Table 2 lists the key parameters of these three devices. In the simulation, all devices have the same area with a value of 1.08 mm 2 .…”

Section: The Reverse Recovery Performancementioning

confidence: 99%

“…The silicon on insulator (SOI) technique has been an attractive choice in the intelligent power module for its low leakage current and excellent dielectric isolation performance [1][2][3]. Moreover, in order to realize the reverse conducting and fast turn-off capability of the lateral insulated-gate bipolar transistor (LIGBT), the researchers proposed the shorted anode IGBTs (SA-IGBT) in which the reverse biased diodes are integrated [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Simulation study on a novel snapback-free and low turn-off loss reverse-conducting SOI-LIGBT with P-type double trench gates on the anode region

Zhang¹,

Kong²,

Yi³

et al. 2019

Semicond. Sci. Technol.

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A snapback-free and low turn-off loss silicon on insulator LIGBT with reverse-conducting capability (RC-LIGBT) is proposed and investigated in this paper. By employing P-type polysilicon (P-poly) double trench gates at the anode region of the proposed device (DTA-LIGBT), the n-drift region located between the P-type double trench gates (DPL region) is fully depleted because of the work function difference between the P-poly and the DPL region. Thus the resistance between the shorted N+ anode and the N-buffer is significantly increased, which effectively eliminates the snapback phenomenon. The simulation results reveal that the proposed structure completely eliminates the snapback effect with the reverse conducting voltage of 1.05 and 1.25 V at J = 100 and 400 A cm −2 , respectively. In addition, the LDMOS is automatically turned on when the device is operating at high voltage, which improves the immunity of latch-up and the short-circuit capability of the device. Simultaneously, the turn-off time of the proposed structure and the turn-off loss are reduced creased by 53.5% and 53% compared with that of the separated shorted-anode LIGBT (SSA-LIGBT), respectively. Moreover, the short-circuit time of the DTA-LIGBT (p) is increased by 186% compared with the SSA-LIGBT.

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“…Table 2 lists the key parameters of these three devices. In the simulation, all devices have the same area with a value of 1.08 mm 2 .…”

Section: The Reverse Recovery Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Simulation study on a novel snapback-free and low turn-off loss reverse-conducting SOI-LIGBT with P-type double trench gates on the anode region

Zhang¹,

Kong²,

Yi³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) is suitable for power integrated circuits (PIC) as a kind of conductivity modulated power device, which has numerous consumer and industrial applications [1,2,3,4,5,6]. Compared with currently used vertical design for IGBT, lateral design with flip-chip technique can lower the cost of the assembly while enable advanced embedding and stacking [7].…”

Section: Introductionmentioning

confidence: 99%

Novel low loss and snapback-free SOI LIGBT controlled by anode junction self-built potential

Wang

Sun

Duan

et al. 2022

IEICE Electron. Express

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In this work, we evaluated a novel low loss and snapbackfree silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) by numerical simulation, which utilizes the inherent junction self-built potential (JSBP) to form depletion region at the anode. When the anode voltage (VAC) is less than built-in potential (Vbi), the introduced electron flowing channel between P-anode pillars is occupied by the depletion region, which hinders electron current from flowing into N-anode and limits the device to working in MOS mode. Furthermore, due to the offset effect for the JSBP by higher VAC, the depletion region disappears and the anode PN junction turns on, which makes the device work in IGBT mode forming normal electron and hole current. At the same forward voltage drop (VF) of 1.64V, extra electron flowing channel makes the turn-off loss (Eoff) of proposed JSBP LIGBT 22.1% lower than that of conventional (Conv.) LIGBT. Moreover, considering to the same Eoff of 0.3mJ/cm 2 , the depletion region with low VAC contributes to relatively enhanced conductivity modulation, which makes VF of proposed JSBP LIGBT reduce by 19.6% compared to separated shorted-anode (SSA) LIGBT, while also completely eliminates snapback effect. Therefore, the proposed JSBP LIGBT gains the best trade-off performance between VF and Eoff.

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“…The lateral power devices are the core and key of power integrated circuits (PIC), which can meet the requirements of high speed, low loss and easy integration [1,2,3,4,5,6]. Because of the characteristics of high input impedance of MOS structure and bipolar conduction of PNP structure, the insulated-gate bipolar transistor (IGBT) device has low driving power and low forward voltage drop (V F ), which is very suitable for the application of converter systems with high DC voltage [7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

Novel anode Schottky trench contact controlled SOI LIGBT with low loss and snapback-free

Wang

Sun

Duan

et al. 2022

IEICE Electron. Express

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The novel shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) with low loss and snapback-free is proposed and studied by numerical simulation, named the anode Schottky trench contact (ASTC) LIGBT in this paper. Due to the fixed anode resistance, the conventional shorted-anode LIGBT structure has the contradiction between the snapback-free and high forward voltage drop (V F ). The novelty of proposed device is that, it makes full use of the lateral space charge region formed by the Schottky trench contact, so as to introduce the changed anode resistance by varying the anode voltage bias (V AC ). The low V AC in the on-state achieves completely snapback-free with fully occupied channel by depletion region. The high V AC value in case of the turn-off process achieves fully opening of electron flowing channel with the disappearance of depletion region, which is conducive to the realization of barrier-free process for the electron extraction. Under the same V F of 1.42 V at the anode current density J AC = 100 A/cm 2 , the turn-off time and turn-off loss (E off ) of proposed ASTC LIGBT is reduced by 41.5% and 37.9%, respectively, compared with the conventional LIGBT. Therefore, it can be concluded that the proposed ASTC LIGBT achieves the best trade-off performance between V F and E off .

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High voltage, high speed lateral IGBT in thin SOI for power IC

Cited by 16 publications

References 4 publications

Simulation study on a novel snapback-free and low turn-off loss reverse-conducting SOI-LIGBT with P-type double trench gates on the anode region

Simulation study on a novel snapback-free and low turn-off loss reverse-conducting SOI-LIGBT with P-type double trench gates on the anode region

Novel low loss and snapback-free SOI LIGBT controlled by anode junction self-built potential

Novel anode Schottky trench contact controlled SOI LIGBT with low loss and snapback-free

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