2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2018
DOI: 10.1109/ipfa.2018.8452592
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High Voltage InGaN/GaN/AlGaN RTD Suitable for ESD Protection Applications of GaN/InGaN-based Devices and ICs Validated by Simulation Results

Haipeng Zhang
1
,
Geng Li
2
,
Mi Lin
3
et al.
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